• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.91-92
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• 2005

The electromagnetic coupling effect in standard CMOS process is simulated and evaluated. EM coupling transfer characteristic between planar spiral inductors by isolation methode in standard CMOS have simulated and measured. Measurement results show that suppression of EM coupling effect by ground guardring. The evaluated structures are fabricated 1P5M(one poly, five metal) 0.25um standard CMOS process. These measurement results provide a isolation design guidelines in standard CMOS process for Rf coupling suppression.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.697-700
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• 2007

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.552-555
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• 1999

In this paper, the volume resistivity properties due to mixture ration of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) are studied. Electrodes is composed of upper electrode 37(mm $\Phi$), guardring electrode(inner 55(mm $\Phi$ ), and lower electrode 87(mm $\Phi$ In order to measure the leakage current, We used electrometer and stable oven with temperature controller. Measurement method is to measure the leakage current of next specimen after applying the voltage according to 'Step Apply Methods' for ten minutes. In order to measure the volume resistivity properties, the micro electrometer is used, the range of temperature and applying voltage are 25 to 100[$^{\circ}C$] to 100[V] respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.