Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition (원격 플라즈마 원자층 증착법을 이용한 Al2O3/GaN MIS 구조의 제작 및 전기적 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.22 no.4
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- pp.350-354
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- 2009