• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.84-89
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• 1995

The growth and the film characteristics of heteroepitaxial $Si_{1-x}Ge_x$ films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of $Si_{1-x}Ge_x$ heteroepitaxial layers, $SiH_4/GeH_4/H_2$gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as $650^{\circ}C$, and the composition ratios change linearly with $SiH_4/GeT_$$ gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm $B_2H_6$ source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200$\AA$/decade.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.235-240
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• 2003

The development of large area GaN substrates is one of important issues in expanding of GaN-based applications. In order to investigate the possibility, GaN thick films were grown by a sublimation technique, using MOCVD-GaN films grown on a sapphire as a seed-crystal substrate and a commercial GaN powder as a source material. The pressure in chamber under the fixed flow rate of $N_2$ gas and $NH_3$ gas was kept at 1 atmosphere and the effects of the various processing parameters such as the distance between source material and seed crystal, the temperature of top- and bottom heater and the growth time during the growth of GaN thick film were investigated. The growth feature and microstructure of the GaN thick films were observed by SEM and XRD. The optical bandgap properties and the defects were evaluated by the PL measurement. By these results, the growth conditions such as the distance between the GaN source and the seed substrate, the growth temperature and the growth time were determined for the satisfied growth of GaN thick films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.93-100
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• 2013

Many researches have been carried out to reduce and/or to capture the major global warming gases. Especially, the hydrate formation mechanisms were intensively investigated for carbon dioxide sequestration and storage process applications. In this study, the characteristics of film-type crystal growth mechanism of carbon dioxide hydrate were comprehensively examined. Carbon dioxide hydrate crystal was formed in semi-batch type stir reactor at various pressure conditions while the temperature was fixed to be constant to reduce and minimize the guest gas solubility effects. A supply gas composition was 99.999 % of Carbon dioxide, the observation data was collected by optical microscope adopted CCD camera (Nikon DS-5M/Fi1/2M-U2). This study revealed that the guest gas pressure changes significantly altered the crystal growth mechanism and film growth rate of carbon dioxide hydrate crystal. The critical pressure of the carbon dioxide hydrate of crystal growth mechanism change was found to be 2.0 MPa. The capillary force and gas concentration gradient also significantly changed the film-type crystal growth mechanism of carbon dioxide hydrate crystal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1694-1695
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• 2007

DC-Motor is needed more and more sophisticated control to follow the highest precision of industrial automation and used in a number of control equipment or industrial fields. It is also useful to control single crystal(Al2O3) growth. It is possible to procure a quality crystal utilizing a DC-Motor, if you mix Hydrogen and Oxygen gas properly and keep proper temperature in accordance with time process. In this paper, we will study about electrical valve positioning system for the gas mixture to improve the quality of single crystal($Al_{2}O_{3}$) growth and we will design about realtime monitoring systems of the automatic gas contol DC- Motor for single crystal($Al_{2}O_{3}$) growth

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.147-150
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• 2008

Multiple ZnO nanorod device detecting $NO_2$ gas was fabricated by sol-gel growth method and gas response characteristics were measured as a chemical gas sensor. The device is mainly composed of sensing electrode and sensing nano material. To acquire high sensitivity of the device for $NO_2$ gas it was heated by a heat chuck up to $400^{\circ}C$ The sensing part was easily made using the CMOS compatible process, for example, the large area and low temperature nano material growth process, etc. The sensors were successfully demonstrated and showed high sensitive response for $NO_2$ gas sensing.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.580-584
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• 2007

The ZrC layer instead of SiC layer is a critical and essential layer in TRISO coated fuel particles since it is a protective layer against diffusion of fission products and provides mechanical strength for the fuel particle. In this study, we carried out computational simulation before actual experiment. With these simulation results, Zirconium carbide (ZrC) films were chemically vapor deposited on $ZrO_2$ substrate using zirconium tetrachloride $(ZrCl_4),\;CH_4$ as a source and $H_2$ dilution gas, respectively. The change of input gas ratio was correlated with growth rate and morphology of deposited ZrC films. The growth rate of ZrC films increased as the input gas ratio decreased. The microstructure of ZrC films was changed with input gas ratio; small granular type grain structure was exhibited at the low input gas ratio. Angular type structure of increased grain size was observed at the high input gas ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.418-418
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• 2009

Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

• Asian-Australasian Journal of Animal Sciences
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• v.14 no.8
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• pp.1110-1117
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• 2001

Responses of the rumen fungus, Neocallimastix frontalis RE1, to long chain fatty acid (LCFA) were evaluated by measuring gas production, filter paper (FP) cellulose digestion and polysaccharidase enzyme activities. LCFA (stearic acid, $C_{18:0}$; oleic acid, $C_{18:1}$; linoleic acid, $C_{18:2}$ and linolenic acid, $C_{18:3}$) were emulsitied by ultrasonication under anaerobic condition, and added to the medium. When N frontalis RE1 was grown in culture with stearic, oleic and linoleic acid, the cumulative gas production, gas pool size, FP cellulose digestion and enzymes activities significantly (p<0.05) increased at some incubation times(especially, exponential phases of fungal growth, 48~120 h of incubation) relative to that for control cultures. However, the addition of linolenic acid strongly inhibited all of the investigated parameters up to 120 h incubation, but not after 168 and 216 h of incubation. These results indicated that stearic, oleic and linoleic acids tended to have great stimulatory effects on fungal cellulolysis, whereas linolenic acid caused a significant (p<0.05) inhibitory effects on the cellulolysis by the rumen fungus. These results are the first report of the effect of LCFAs on the ruminal fungi. Further research is needed to identify the mode of action of LCFAs on fungal strains and to verify whether or not ruminal fungi have ability to hydrate unsaturated LCFAs to saturated FAs. There was high correlation between cumulative in vitro gas production and fungal growth (94.78%), FP cellulose degradation (96.34%), CMCase activity(90.86%) or xylanase activity (87.67%). Thus measuring of cumulative gas production could be a useful tool for evaluating fungal growth and/or enzyme production by ruminal fungi.

• 연구논문집
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• s.29
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• pp.91-99
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• 1999

Fatigue crack growth behaviors of Cr-Mo steels developed recently for thick-wall pressure vessel were investigated. Experiments in accordance with ASTM E647 standard were performed for 1/2 inch CT specimens of $2^(1/4)$Cr-1Mo and 3Cr-IMo steels in gaseous environments, hydrogen gas of 10 atm, 1 atm and argon gas of 1 atm. Fatigue crack growth rates were observed and effects of gaseous hydrogen and argon on the crack growth behavior were discussed.