• 대한화학회지
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• 제22권6호
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• pp.380-385
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• 1978

진공미량저울을 사용하여 Spheron 6 위에서 o-크실렌의 여러 온도에서의 흡착등온곡선을 얻고 이들로 부터 BET 방법을 써서 흡착분자 단면적을 구하였다. 이 단면적의 값은 $-15^{\circ}C$까지에서는 변화가 없었고 -15와 $-14^{\circ}C$ 사이에서 갑자기 변하여 $-14^{\circ}C$ 이상의 온도에서는 다시 일정한 값을 유지하였다. 이 결과는 $-15^{\circ}C$ 보다 낮은 온도에서는 촘촘히 쌓인 편재흡착이 일어나고 $-14^{\circ}C$ 이상의 온도에서는 벤젠고리를 중심으로한 하나의 회전자유도를 얻는 것으로 생각된다.

• 전자공학회논문지A
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• 제30A권1호
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• 한국입자에어로졸학회지
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• 제8권1호
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• pp.37-43
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• 2012

In this study, we designed a 'spark in liquid' system. The spark discharge between two electrodes were used to generate particles by using sufficient temperature to evaporate a part of electrodes. The power supply system provides a continuous spark discharge by discharging of the capacitor to ionize the electrodes in liquid. The DC spark discharge system operates with 1-10 kV voltage. Processed copper and graphite rods were used to both electrodes with 1-3 mm diameter. There are several variables which can control the particle size and concentration such as gap distance between electrodes, applied voltage, operating liquid temperature, electrode type and liquid type. So we controlled these variables to confirm the change of particle size distribution and concentration of particles contained in liquid as wt%. 'spark in liquid' system is expected to apply nanoink by control of concentration with analysis of characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.54-55
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• 2010

Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

• 한국재료학회지
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• 제27권2호
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• pp.113-118
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• 2017

Natural and expandable graphites were chemically treated in acidic aqueous solutions such as acetic acid or mixtures of acetic acid and nitric acid. Structures and thermal conductivities of the as-treated graphites were characterized in detail. Both graphites were significantly oxidized in the mixed acidic solution of $H_2SO_4$ and $HNO_3$, which condition was generally used for the oxidation of carbon nanotubes. This considerable oxidation of graphites caused a depression of their thermal conductivity. The structural characteristics, obtained by XRD and XPS, show that the graphites treated in the relatively weak acidic conditions (acetic acid or mixture of acetic acid and nitric acid) were quite similar to the untreated graphites. However, the thermal conductivities of both acidic-treated graphites were remarkably increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.488-488
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• 2013

일반적으로 sputtering 방식을 이용한 박막 증착 방법은 장치가 간단하고 고품질의 박막이나 균일한 박막을 만들 수 있는 장점이 있어 널리 사용된다. 본 연구에서는 기존의 sputtering 방식에 Modulation technology를 적용하고자 한다. Modulation technology를 이용하여 전원의 pulse on 시에는 일반적인 sputter 방식으로 기판에 박막을 증착하고 pulse off 시에는 양의 전압을 인가하여 이온빔을 발생시킨 후 기판에 입사시키는 방식을 적용하여 박막 형성의 특성을 향상시키고자한다. 이는 고온의 heater 및 이온빔이나 레이저, 플라즈마 소스 등의 추가적인 에너지원의 장치가 필요 없이 고품질의 박막의 특성을 향상시키는 기대 효과가 있다. Modulated Sputtering System (MSS)에 인가되는 전압과 전류의 특성을 관찰하였으며 MSS에 인가하는 전압과 frequency, 그리고 duty cycle 변화에 따른 이온 에너지 분포를 에너지 분석기를 통해 측정하였다. 또한 Langmuir probe를 이용한 afterglow plasma 상태에서의 이온전류를 측정하였다. 그리고, MSS 이용하여 Ti 박막을 증착하였으며 박막의 특성을 분석하기 위하여 a-step, SEM, XRD, AFM을 이용하여 두께, 결정성장면, 표면 거칠기를 측정하였다. 측정 결과 기판에 입사되는 양이온의 에너지가 증가함에 따라 (002) 결정면 방향에서 (100) 결정면 방향으로 증착되고 표면 거칠기가 낮아짐을 측정하였다. 또한 Graphite 타겟을 이용한 carbon 박막을 증착하였으며 박막의 특성을 분석하기 위하여 Raman을 이용한 분석 결과 양이온의 에너지가 증가함에 따라 박막내의 sp3 함유량이 변화함을 측정하였다.

• 한국주조공학회지
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• 제17권4호
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• pp.393-401
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• 1997

Commercial flake graphite cast iron substrate was coated with titanium powder by low pressure plasma spraying and was irradiated with a $CO_2$ laser to produce the wear resistant composite layer. From the experimental results of this study, it was possible to composite TiC particles on the surface layer by direct reaction between carbon existed in the cast iron matrix and titanium with thermal sprayed coating by remelting and alloying them using laser irradiation. The cooling rate of laser remelted cast iron substrate without titanium coating was about $1{\times}10^4$ K/s to $1{\times}10^5$ K/s in the order under the condition used in this study. The microstructure of alloyed layer consisted of three zones, that is, TiC particule crystallized zone (MHV $400{\sim}500$), the mixed zone of TiC particule+ledebulite (MHV $650{\sim}900$) and the ledebulite zone (MHV $500{\sim}700$). TiC particules were crystallized as a typical dendritic morphology. The secondary TiC dendrite arms were grown to the polygonized shape and were necking. And then the separated arms became cubic crystal of TiC at the slowly solidified zone. But in the rapidly solidified zone of fusion boundry, the fine granular TiC particules were grouped like grape.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.38-38
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• 2010

Ever since the experimental discovery of graphene exfoiliated from the graphite flakes by Geim et at., this area has drawn a lot of attention for its possible application in IT industry. For the growth of graphene, chemical vapor deposition (CVD) has been widely used to fabricate the large area graphene. The lateral size of this graphene can be easily controlled by the size of the metal substrate though the chemical etching to remove this substrate is somewhat troublesome. Another problem which is hard to avoid is the folding at the grain boundary. We will discuss the origin of the folding first and introduce the way to avoid this folding. To solve this problem, we have used the various types of micro-thin metal foils. The precise control of hydro-carbon and the carrier gas results in the formation of the graphene on top of substrate. The thickness of graphene layers can be controlled with the control of gas flow on top of Cu substrate in contrast to the previously reported self-limiting growth $behavior^1$. Uniformity of this graphene layer has been checked by micro-raman spectroscopy and SEM. The size of grain can be enhanced by thermal treatment or use of other metal substrate. The dependence of grain size on the lattice size of the substrate will be discussed. By selecting the shape of substrate, we can grow various types of graphene. We will introduce the micron size graphene tube and its application.

• Bulletin of the Korean Chemical Society
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• 제12권4호
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• pp.371-373
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• 1991

The crystal structure of eprazinone dihydrochloride, $C_{24}H_{32}N_2O_2$${\cdot}$2HCl, has been determined from 2102 independent reflections collected on an automated Nonious CAD-4 diffractometer using graphite-monochromated $Mo-K\alpha$ radiation. The crystals are monoclinic, space group P$2_1$/n, with unit cell dimensions a=11.381(2), b=28.318(2), c=7.840(1) $\AA$, $\beta=92.45(2)^{\circ}$, ${\mu}=2.37$ c$m^{-1}$, F(000)=968, and Z=4. Final R value is 0.071 for independent 2102 observed reflections. The molecule assumes an extended conformation. The piperazine ring has a normal chair conformation and the four carbon atom are planar with a maximum displacement of 0.004 $\AA$ for C(18) atom. The two chloride ions are hydrogen bonded to the two piperazine nitrogen atoms [N(14)${\cdot}{\cdot}{\cdot}$Cl(1); 2.986(6) $\AA$ N(17)…Cl(2); 3.084(8) $\AA$].

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.