• Tribology and Lubricants
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• 제34권2호
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• pp.60-66
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• 2018

Graphene is a monolayer of carbon atoms (approximately 0.34 nm), arranged in a honeycomb network. It has been hailed as a next-generation flexible and transparent material because it has high electrical and thermal conductivities, excellent mechanical properties, as well as flexible and transparent properties. The wettability of graphene alters its adhesion or surface energy, and it is therefore an important parameter influencing its application in the fabrication of next-generation flexible and transparent electronics. Studies on the wettability of graphene are numerous and various opinions exist. However, almost all of these studies use the wet transfer method to transfer the graphene. In this study, therefore, we investigated the effect of wet and dry transfer methods on water contact angles of graphene on a substrate. The contact angles of substrates vary depending on the type of substrate. It was found that after graphene is transferred to the substrate, regardless of transfer method, the graphene/substrate contact angle increases to a value. The contact angle of graphene transferred using the dry transfer method is higher than the contact angle of graphene transferred using wet transfer methods. The wet transferred graphene is affected by the poly(methyl methacrylate) (PMMA) residue and the polar surface of substrate. The dry transferred graphene is influenced by the conformal contact between graphene and substrate.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Carbon letters
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• 제16권1호
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• pp.41-44
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• 2015

We report the preparation of sulfonated reduced graphene oxide (SRGO) by the sulfonation of graphene oxide followed by radiation-induced chemical reduction. Graphene oxide prepared by the well-known modified Hummer's method was sulfonated with the aryl diazonium salt of sulfanilic acid. Sulfonated graphene oxide (SGO) dispersed in ethanol was subsequently reduced by ${\gamma}$-ray irradiation at various absorbed doses to produce SRGO. The results of optical, chemical, and thermal analyses revealed that SRGO was successfully prepared by ${\gamma}$-ray irradiation-induced chemical reduction of the SGO suspension. Moreover, the electrical conductivity of SRGO was increased up to 2.94 S/cm with an increase of the absorbed dose.

• Applied Microscopy
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• 제42권4호
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• pp.218-222
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• 2012

Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.

• Journal of Electrochemical Science and Technology
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• 제4권1호
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• pp.19-26
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• 2013

Graphene/Ni-Al layered double hydroxide (LDH) hybrid materials were synthesized by a hydrothermal reaction. Hexagonal Ni-Al LDH particles nucleated and grew on graphene sheets, thus preventing restacking of the graphene sheets and aggregation of the Ni-Al LDH nanoparticles upon drying. Electrode made from the graphene/Ni-Al LDH hybrid materials showed a substantial improvement in electrochemical capacitance relative to those made with pure Ni-Al LDH nanoparticles. In addition, the graphene/Ni-Al LDH hybrid composite materials showed remarkable stability after 4000 cycles with over 100% capacitance retention. These materials are thus very promising for use in electrochemical capacitor electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.412-414
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• 2014

In this study, we investigate atomic and electronic structure of graphene with substitutional impurities such as boron or nitrogen atom using density functional theory (DFT) calculations. To investigate the effects of substitutional impurities in graphene, we consider a ($6{\times}6$) supercell of graphene in our calculations. For detailed electronic properties of graphene, we compare the energy band structure of B- or N-doped graphene with that of pristine graphene.

• 산업기술연구
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• 제35권
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• pp.59-65
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• 2015

As the fossil fuels are depleted nowadays, development of alternative energies is absolutely required in the world. Efficient production of hydrogen by water-splitting using solar energy can be one of the methods to solve the global energy and environmental problems. But this method has a problem of low conversion efficiency. The application of graphene can be one method to help increase the conversion efficiency. For this reason, mass production of high quality graphene is required. In this study, we prepared graphene using the chemical exfoliation method. We applied the Hummer's method and Tour's method to oxidize the graphite and could get the different Graphene Oxide(GO) from different process conditions. We also tried to convert the GO to graphene by thermal reduction and could remove functional group of GO effectively. The control of oxidation conditions was quite important to obtain the high quality graphene.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.