• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.876-881
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• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.38 no.2
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• pp.128-133
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• 1993

This experiment was carried out to evaluate the germination characteristics of Korean red rice seeds. Ten lines of the long grain and ten lines of the short grain Korean red rices were tested for dormancy, shoot emergence rate at different water and soil depth. Both the long and short grain type seeds of Korean red rice germinated over than 99% immediately after harvest, so that no dormancy was observed in the Korean red rices. Shoot emergence rate of the long grain red rices at 7cm of water depth and that of the short grain red rices at 11cm were 83.3% and 83.5% respectively, while those of the indica check Samgangbyeo and japonica check Seomjinbyeo were 0%. Shoot emergence rates of the long and short grain red rices at 7cm of soil depth were 71.1% and 73.9% respectively, while those of the check varieties Samgangbyeo and Seomjinbyeo were 40.0% and 28.0% respectively. Thus, the Korean red rices were expected to be useful germplasm source for direct seeding.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1150-1158
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• 2000

반도성 SrTiO$_3$분말을 이용하여 상압에서 제조된 소결체의 소결 분위기에 따른 소결체 입계의 결함 화학 및 전기적 특성을 고찰하였다. 소결 분위기를 질소-수소, 질소, 공기로 변화시킴에 따라서 입계에서 O/(Sr+Ti)의 비는 1.6로부터 2.1로 증가하였으며, 또한 입계의 과잉 음전하층에서 전하 밀도는 1C/$ extrm{cm}^2$로부터 1.26C/$\textrm{cm}^2$로 증가하였다. 소결체의 문턱 전압, 입계 저항 그리고 입계 전위 장벽은 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라 6.40-1000 V/cm, 2.70-3050 kΩ 그리고 0.08-10.9 eV로 각각 증가하였다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.12
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• pp.1610-1616
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$(0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere (N$_{2}$ gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. The results of the capacitance-valtage measurements indicated that the grain boundary was composed of the continuous insulating layers. The capacitance is almost unchanged below about 20[V], but decreased slowly over 20[V]. The conduction mechanism of the specimens observed in the temperature range of 25~125[.deg. C], and is divided into three regions having different mechanism as the current increased: the region I below 200[V/cm] shows the ohmic conduction. The region II between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect.ct.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• International Journal of Safety
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• v.8 no.1
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• pp.6-9
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• 2009

The crack in a J85 engine V.G. actuator arm shaft for a bell crank on the engine compressor was investigated. The crack was observed in twenty two shafts during the inspection of 238 shafts. The failure analysis of shaft cracks was performed by chemical composition analysis using ICP(Inductively Coupled Plasma) and by fracture surface and microstructure analysis using FE-SEM and optical microscope. The crack initiated from the top and bottom and propagated to the center along the grain boundaries. From the chemical composition analysis, the fractography of the fracture surface and the microstructure, it was found that the failure mechanism of the shafts is the inclusion-related intergranular decohesion crack. The inclusion was found out from MnS particle by EDS(Energy Dispersive Spectroscopy). The crack initiated MnS inclusion in the grain boundary and propagated with the increase of applied shear stress during long operation. In order to prevent the fracture, NDI(Nondestructive inspection) is needed periodically as recommended.

• Journal of Biosystems Engineering
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• v.43 no.3
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• pp.194-201
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• 2018

Purpose: The objective of this study was to propose a formula for the theoretical grain mean transport velocities of an elliptically moving oscillator by modifying the grain mean transport velocity formula applied to linear motion and to compare the calculated values with the experimental values of grain mean transport velocity. Methods: The values of the throwing index ($K_v$) and the maximum horizontal velocities for various positions on the elliptical oscillator were obtained using kinematic analysis. To obtain the actual grain transport velocity, the mean transport velocities of perilla grains at six positions on the sieve surface were measured using a high-speed camera and compared with the theoretical values. The cam with an eccentric bearing on the oscillator was designed to be eccentric by 1.6 cm so that the lengths of the major axis of the elliptical motion were 3.2-3.6 cm. The material used in the experiments was perilla grain. Results: The experimental result was consistent with the theoretical value calculated using the proposed formula ($R^2$ is 0.80). It is considered that the angle difference between the maximum accelerations in the directions vertical and horizontal to the sieve has as much influence on the grain mean transport velocity as the value of Kv itself. Conclusions: It was possible to theoretically obtain the grain mean transport velocities through a screening device in elliptical motion by modifying the formula of the grain mean transport velocities used in linear motion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1099-1107
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• 1998

In this study, the microstructure and electric conductivity of 5mol% $Gd_2O_3$-5mol% $Y_2O_3-ZrO_2$ system(5G5YZ) with a variation of sintering time at $1600^{\circ}C$ were investigated. By the result of TEM analysis of 5G5YZ sintered for 12h, a microcrack was observed near grain boundary. The change of the sintering time did not affect the lattice conductivity, but the grain boundary contribution was varied with the sintering time. The grain boundary conductivity of the sample sintered for 1h showed the highest value. Furthermore, the activation energy of the total conductivity was independent upon the sintering time and showed approximately 1.01eV. The highest conductivity measured at $1000^{\circ}C$ was 0.0197S/cm with the sample sintered for 1h. Comparing to 0h’s, the thickness ration of grain boundary as a function of sintering time were 0.88, 1.11 and 1.29 for 1h, 5h and 12h, respectively. In case of the sample sintered for 1h, the thickness of the grain boundary showed the lowest value. The increase of the sintering time over 1h made the decrease of the electric conductivity as well as the increase of the grain growth and the thickness of the grain boundary. As a result, it seemed that the proper sintering time for 5G5YZ composition was 1h.

• Journal of Biosystems Engineering
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• v.25 no.2
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• pp.97-106
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• 2000

To develop the grain moisture meter using microwave free space transmission technique, a 10.5GHz microwave signal with the power of 11mW generated by an oscillar with a dielectric resonator is transmitted to an isolator and radiated from a transmitting $2{\times}2$ microstrip patch array antenna into the sample holder filled with the 12 to 26%w.b. of Korean Hwawung paddy rice. the microwave signal, attenuated through the grain with moisture, is collected by a receiving $2{\times}2$ microstrip patch array antenna and detected using a Shottky diode with excellent high frequency characteristic. A pair of light and simple microstrip patch array antenna for measurement of grain moisture content is designed and implemented on atenflon substrate with trleative dielectric constant of 2.6 and thickness of 0.54 by using Ensemble ver. 4.02 software. The aperture of microstrip patch arrays is 41 mm width and 24mm high. The characteristics of microstrip patch antenna such as grain. return loss, and bandwidth are 11.35dBi, -38dB and 0.35GHz($50^{\circ}$ at far-field pattern of E and H plane. The width of the sample holder is large enough to cover the signal between the antennas temperature and bulk density respectively. The calibration model for measurement of grain moisture content is proposed to reduce the effects of fluectuations in bulk density and temperature which give serious errors for the measurements . From the results of regression analysis using the statistically analysis method, the moisture content of grain samples (MC(%)) is expressed in terms of the output voltage(v), temperature (t), and bulk density of samples(${\rho}b$)as follows ;$$MC(%)\;=\;(-3.9838{\times}10^{-8}{\times}v^{3}+8.023{\times}10^{-6}{\times}v^{2}-0.0011{\times}v-0.0004{\times}t+0.1706){\frac{1}{{\rho}b}}{\times}100$ Its determination coefficient, standard error of prediction(SEP) and bias were found to be 0.9855, 0.479%w.b. and -0.0.369 %w.b. respectively between measured and predicted moisture contents of the grain samples.