• Journal of The Geomorphological Association of Korea
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• v.18 no.4
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• pp.177-191
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• 2011

This paper describes a dune field on shoreline of Young Gwang. To clarify geomorphic characteristics, made an analysis of grain size of the sand sediments samples and surface texture of quartz grains, and field survey. The following results were obtained : 1) Young Gwang sand dune is taking to pieces by human impact, and dose not move ahead the process of sand dune. 2) there was a turbulence of sand sediments outcrops saying to the cryoturbation that represents cold climatic environments, 3) Constituents of sand dune are mainly fine and very fine sand(2.5~4.5Φ) consisted by quartz and feldspar. Young Gwang sand grians have some analogy with different sites in west coast 4) In surface texture, roundness is thought to have been formed sub-angular, and some V cracks represented mechanical weathering environments. Especially, the dune environment has significant cultural and archaeological values arising from the occupation of human in the past. Those areas where occupation is known provide a valuable source of past records relating to human settlement.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.842-848
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• 2003

Semiconducting $\alpha$-Fe$_2$O$_3$ film was prepared by the cathodic electrodeposition method on Indium Tin Oxide (ITO) substrate for photoelectrochemical cell application. After heat treatment at 50$0^{\circ}C$, the phase was changed from Fe to $\alpha$-Fe$_2$O$_3$. The phase, morphology, absorbance, and photocurrent density (A/$\textrm{cm}^2$) of the film depended on the preparation conditions: deposition time, applied voltage, and the duration of heat treatment. The $\alpha$-Fe$_2$O$_3$ film was characterized by X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM), and UV -Visible Spectrophotometer. The stability of the $\alpha$-Fe$_2$O$_3$ film in aqueous solution was tested at zero bias potential under the white-light source of 100 mW/$\textrm{cm}^2$. The apparent grain size of the films formed at -2.0 V was larger than that grown at -2.5 V. The $\alpha$-Fe$_2$O$_3$ film deposited at -2.0 V for 180 s and heat-treated at 50$0^{\circ}C$ for 1 h showed the predominant photocurrent of 834$\mu$A/$\textrm{cm}^2$.

• Journal of The Korean Society of Grassland and Forage Science
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• v.37 no.4
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• pp.271-276
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• 2017

Waterlogging strongly affects maize (Zea mays L.) growth. It is necessary to find the screening method of waterlogging tolerant maize lines. This study was to investigate the growth characters at V3 stage of maize, when is very sensitive to waterlogging. Six Korean maize inbred lines were subjected to waterlogging at V3 stage for 30 days. The 30 days waterlogging treatment significantly reduced plant height, number of expanded leaves, and SPAD value, compared with the control plants. SPAD values were significantly different among the six inbred lines, KS140 was the highest. The dry matter accumulation of aerial and root part were significantly decreased by 30 days waterlogging. KS140 was the weightiest among inbred lines. The dry matter of adventitious root showed same trend. Waterlogging treatment significantly reduced to ear length and thickness, grains filling length, grain number per ear, and maize grain. Plant height, SPAD value, and number of fully-expanded leave showed high correlation with maize grain yield, but number of senescent leaves, dry matter of adventitious root and TR ratio did not, suggesting that the former three traits may be good indicator for evaluating 30-day waterlogging tolerance of maize inbred lines. KS164 was the highest yield by increasing of grains filling length and grain number per ear of among waterlogging inbred lines. According to the results, evaluation of maize waterlogging should be consider both early growth characteristics and resilience in the later growth stages.

• Asian-Australasian Journal of Animal Sciences
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• v.24 no.7
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• pp.965-973
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• 2011

Our objective was to determine the differences in the rate and extent of dry matter digestion between barley subjected to differing agronomic variables. Two malting barley varieties, Copeland and Metcalfe were seeded at rates of 200 and 400 plants/$m^2$. Each of these varieties received nitrogen fertilizer at rates of 0, 30, 60 and 120 kg/ha, resulting in a total of 20 different barley grain samples. Samples were ground through a 6mm screen and approximately 3 g of each weighed into 50 ${\mu}m$ Dacron bags and sealed. The bags were incubated in three ruminally cannulated Holstein cattle for periods of 0, 3, 6 and 24 h. Using the data obtained from these incubations, rates of digestion were able to be predicted. The soluble fraction ranged from 0.229-0.327, the slowly degradable fraction ranged from 0.461-0.656, and the undegradable fraction ranged from 0.038-0.299. The rates of digestion ranged from 0.127-0.165 $h^{-1}$ and the effective degradability ranged from 0.527-0.757. At the Canora location, the Copeland samples which received 120 kg/ha of nitrogen fertilizer had a significantly lower (p = 0.013) soluble fraction than the rest of the samples at that location. A significant interaction (p = 0.009) was seen between the seeding rate and nitrogen fertilizer application with samples from the Canora location, as well as significant differences (p = 0.029) between nitrogen application rates in samples from the Indian head location. The rate of digestion of samples from the Indian head location differed (p = 0.020) between the two seeding rates, with samples seeded at 200 seed/$m^2$ having a slightly higher rate of degradation. Differences in the effective degradability were seen between the different nitrogen application rates with samples from both the Canora and Indian head locations, as well as an (p = 0.004) interaction between the seeding rate and nitrogen fertilizer application rate. Although there was not a clear correlation between the different variables, both nitrogen application and seeding rate did have a significant effect on the rates and extent of digestion across each of the four locations.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.253-258
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• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.403-407
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• 2018

In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.