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Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications

마이크로웨이브 응용을 위한 솔-젤법으로 제작한 K(Ta0.6Nb0.4)O3 박막의 유전 특성

  • Kwon, Min-Su (Research Institute for Green Energy Convergence Technology, Department of Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Lee, Sung-Gap (Research Institute for Green Energy Convergence Technology, Department of Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Kim, Kyeong-Min (Research Institute for Green Energy Convergence Technology, Department of Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Lee, Sam-Haeng (Research Institute for Green Energy Convergence Technology, Department of Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Kim, Young-Gon (Department of Electronics, Chosun College of Science and Technology)
  • 권민수 (경상대학교 나노신소재융합공학과 그린에너지융합연구소) ;
  • 이성갑 (경상대학교 나노신소재융합공학과 그린에너지융합연구소) ;
  • 김경민 (경상대학교 나노신소재융합공학과 그린에너지융합연구소) ;
  • 이삼행 (경상대학교 나노신소재융합공학과 그린에너지융합연구소) ;
  • 김영곤 (조선이공대학교 전자과)
  • Received : 2018.05.31
  • Accepted : 2018.07.02
  • Published : 2018.09.01

Abstract

In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

Keywords

References

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