• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.1-8
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• 2000

Fatigue and data retention characteristics of the Pt/PZT/Pt structure using single grain PZT thin films by PZT seeding method were investigated. In case of fatigue, there is no loss in switched polarization up to 2$\times$10$^{11}$ cycles using 1MHz square wave form at $\pm$10V and no data loss after 30000sec of memory retention at room temperature. From the activation energy measured at high temperatures, the time required 20% loss in remanent polarization is estimated to be 6.6$\times$10$^{7}$ years at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.65-75
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• 1992

0.4wt%C steel added with V and/or Nb were forged and followed by air cooling. The structure-property relationships were examined and multiple regression analysis was conducted to quantify the magnitudes of effects of microalloying elements on the properties of the steels. All material's tensile strength are greater than $70kg/\textrm{mm}^2$, so they are equal to or superior to Q/T material's(S45C). Their impact energies are less than 40J, so they are 50% of Q/T material's. Increasing the content of V from 0.10 to 0.15 wt% had brought improvement in UTS about 20% but with some sacrifice of impact energy. These were the results from the precipitation strengthening by fine dispersion of VC in ferrite, increment of pearlite volume fraction and decrement of pearlite interlamellar spacings. However, increasing the content of Nb from 0.05 to 0.l0wt % slightly improved UTS and impact energy. NbC precipitates were more effective in suppression of austenite grain coarsening than VC precipitates. Combined additions of V+Nb were more effective to bring impact toughness than sole addition. Optimum combination of strength and toughness was accomplished wish 0.4C-1. 19Mn-0.05S-0.12V-0.07Nb steel.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.262-265
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• 2012

The Microstructure and nonlinear electrical properties of the ZPCCYT (ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3$-$Y_2O_3$-$Tb_4O_7$) varistors were investigated for different amounts of $Tb_4O_7$. The addition of $Tb_4O_7$ has a significant effect on microstructure and electrical properties. Analysis of the microstructure indicated that the ceramics consisted of ZnO grain as a main phase and a few secondary phases as a mix of $Pr_6O_{11}$, $Y_2O_3$, and $Tb_4O_7$. As the amount of $Tb_4O_7$ increased, the sintered densities of pellets increased from $\rho$ = 5.70 to $5.78g/cm^3$ and the average grain size decreased from d = 4.8 to $3.6{\mu}m$. The increase in the amount of $Tb_4O_7$ increased from $E_B$ = 7,473 to 10,035 V/cm and from ${\alpha}$ = 39.7 to 52.2. In particular, it was found that the ceramics modified with 1.0 mol% in the amount of $Tb_4O_7$ are suited for the varistors for high voltage in the light of a high sintered density and a high voltage gradient.

• Fire Science and Engineering
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• v.10 no.4
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• pp.3-12
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• 1996

The aim of the present study is to find out the effect of cooling rate on the electrical behavior of ZnO varistors. The microstructure, 1-V characteristics and complex impedance spectra were investigated under the change of cooling rates. It is found that at cooling rate $200^{\circ}$/h, nonlinearity and breakdown voltage reached a maximum value which may show that good intergranular layer is formed as a results of proper cooling rate. Complex Impedance spectras were measured as a function of frequency range 100Hz to 13MHz to determine grain and grainboundary resistance. The semicircles were attributed to the dependence of grain and grainboundary resistance on cooling rates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.342-347
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• 2021

Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba₃V₄O₁₃ - (x) mol BaV₂O₆ system were investigated. The sintered specimens of all compositions consisted of Ba₃V₄O₁₃ and BaV₂O₆, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba₃V₄O₁₃ and BaV₂O₆ phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba₃V₄O₁₃-BaV₂O₆ ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.22 no.1
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• pp.83-109
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• 1977

Isogenic lines for glabrous leaf (gl), hull color(gh) and glutinous endosperm (wx) were used to clarify the effects of the gl, gh and wx gene on the grain yield and yield components in rice plant. Eight genotypes: glgl ghgh wxwx, glgl ghgh WxWx, glgl GH-wxwx, glgl GH-WxWx, GL-ghgh wxwx, GL-ghgh WxWx, GL-GH-wxwx and GL-GH-WxWx were evalutated in the backcrossed $F_2$ generation. Significant effects were measured for gl genotypes on heading date, gh genotypes on grain fertility, and wxwx genotypes on number of panicles per hill and 1, 000 grain weight. The grain yield of straw hull and non glutinous lines were higher than gold hull and glutinous lines. The interaction of three genes, gl, gh and wx was significant for heading date, but not significant in other characters. The average value of isogenic lines which were combined with two recessive genes and one dominant gene were lower and the C.V. value was higher than the isogenic lines which were combined with two dominant genes and one recessive gene in all characters except plant height and number of grains per plant. The average value of isogenic line combined with three recessive genes was lower and the C.V. was higher than the isogenic line combined three dominant genes in all characters measured.

• Plant Resources
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• v.5 no.3
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• pp.196-201
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• 2002

This study was conducted to investigate the relationships between yearly variations of climatic elements and yearly variations of productivity in sesame. In addition, correlation coefficients among yield and yield components were estimated. The data of yield and yield components were investigated for 10 years from 1992 to 2001. The meteorological data gathered at the Yeosu Weather Station for the same period were used to find out the relationships between climatic elements and productivity. Yearly variation of the amount of precipitation in July and September were large with coefficients of variation(c.v.) of 64.59, 92.47%, respectively, but the variation of the average temperature in June and August were relative small. Yield and plant height greatly with c. v. of 26.24, 23.41 %, respectively, 1, 000 grain weights show more or less c.v. of 3.83% and length capsule setting show still less variation. Correlation coefficients between maximun temperature in period of cultivation(from June to September) and yield are positively significant at the level of 5.1 %, respectively. Correlation coefficients amount the plant height, length capsule setting, number of capsules per plant, weight of 1, 000 grains and seed yield were positively significant at the level of 1 %, respectively. Simple linear regression equations by the least square method are estimated for number of capsules per plant(Y$_1$) and the maximun temperature in August(X) as $Y_1$=10.1255+0.1725X, and for yield(Y$_2$) and the maximun temperature in August(X) as $Y_2$=21.6151 + 1.3724X.

• 한국해양학회지
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• v.30 no.1
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• pp.1-12
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• 1995

The modal analysis was carried out for the total of 216 subface sediments of southern continental shelf of Korean peninsula. Sandy mud or muddy sand distributed in the range of 70∼100 m water depth revealed the bimodal type (sand and mud components). The relations of textural parameters obtained from every modal were consistent with those of shallow marine sediments. The characteristics of sand component between bimodal were as follows: (1) the distributions of mean grain size, sorting, shell content were repeatedly distributed like the directions of depth contour lines. (2) Sand component was composed of medium to fine sand (Mz, 1-3$\psi$) containing many shell fragments, a few pebbles, and iron-stained quartz. (3) The surface of quartz revealed the concordial breakage and V-shaped features formed at high energy environment. (4) In CM-pattern, sand component was plotted in rolling and bottom suspension area. These characteristics imply that sand component probably derives from shoreface sediments deposited at the beach environment.