• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.295-298
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• 2005

High temperature deformation behavior of $\alpha\;and\;\beta$ phase of Ti-6Al-4V was investigated within the framework of a self-consistent approach at various temperature ranges. To examine the flow behavior of u-phase, Ti-7.0Al-1.5V alloy was used, whose chemical composition is close to that of the $\alpha$ phase in Ti-6Al-4V at hot working temperatures. The flow stress of $\beta$ phase was predicted by using self-consistent approach. The flow stress of $\alpha$ phase was higher than that of $\beta$ phase above $750^{\circ}C$, while the $\beta$ phase revealed higher flow stress than a phase at $650^{\circ}C$. It was found that the relative strength and strain rate ratio between $\alpha\;and\;\beta$ phase significantly varied with temperature. From this approach, the mode for grain matrix deformation was proposed as a mixed type of both iso-stress and iso-strain rate modes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.8
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• pp.1211-1216
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• 1989

To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.58-68
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• 1995

Polysilicon capacitors with pyrogenic oxide and TEOX oxide as insulators were fabricated to develop capacitors which can be applied to analog CMOS IC, and the characteristics of the capacitors were compared with each other. The morphology of bottom polysilicon in pyrogenic oxide capacitor is degraded due to the generaged protuberances of the polysilicon grain during oxidataion. The polysilican capacitor with pyrogenic oxide of 57 nm thickness showed that the effective potential barrier height of 0.45 eV is much less than that of MOS capacitor (3.2 eV)when the top electrode is biased with a positive volgate. The morphology of the polysilicon capacitor with TEOS oxide, however, was not degraded during oxide deposition by LPCVD. The polysilicon capacitor with TEOS oxide of 54 nm thickness showed the effective potential barrier height of 1.28 eV when the top electrode is biased with a negative voltage. Therefore, it is concluded that the polysilicon capacitor with TEOS oxide is more applicable to analog CMOS IC than the pyrogenic oxide polysilicon capacitor.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.334-335
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• 2006

WC/WC interface in VC mono-doped WC-10mass%Co submicro-grained hardmetals of $0.5\;{\mu}m$ was investigated together with WC/Co interface by using HRTEM and XMA. The thickness of V-rich layer and the analytical value of V at WC/WC interface were almost the same as those at WC/Co interfaces. These results, etc., suggested that the V-rich layers at both interfaces were not generated by an equilibrium segregation mechanism in the sintering stage, but generated by a preferential precipitation mechanism during the solidification of Co liquid phase in the cooling stage. Based on this suggestion, we succeeded in developing a nano-grained hardmetal with 100 nm $(0.1\;{\mu}m)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.739-742
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• 2000

Nanostructured ZnS thin films were grown on the slide glass substrate by the chemical bath deposition using an aqueous so1ution Of ZnSO$_4$and CH$_3$CSNH$_2$at 95$^{\circ}C$. The average grain sizes of the ZnS thin film estimating from the Debye-Scherrer formula are 4.8 nm. The optical transmittance edge of the ZnS thin films (4.0 eV) was shifted to the shelter wavelength compared with that of the bulk ZnS (3.67 eV) due to the quantum size effects. The ZnS thin films showed a strong photoluminescence intensity and a sharp emission band from 410 to 480 nm 3t room temperature. The PWHM of photoluminescence peak was about 40 nm. For the viloet(410 nm) and blue(480 nm) emission of the ZnS thin films, the temperature dependence can be described by an Arrhenius equation with an activation energy of 168 and 157 meV, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.53-58
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• 2005

We researched damage formation and failure mechanism under DC(direct current) and AC(alternative current) in order to estimate reliability of Cu interconnects in ULSI. Higher current density and temperature induces more short TTF(time to failure) during interconnects carry DC. Measurement reveals that Cu electromigration has activation energy of 0.96eV and current density exponent value of 4. Thermal fatigue is occurred under DC, and higher frequency and ${\Delta}$T value gives more severe damage during interconnects carry AC Through failure morphology analysis with respect to texture, we observed that damages had grown widely and facetted grains had appeared in (100)grain but damages in (111) had grown thickness direction of line and had induced a failure rapidly.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.