• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1418-1420
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• 1996

In this paper, structural properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar ceIl prepared by thermal vacuum evaporation were studied. Structural variation with $CdCl_2/heat$ treatment are assessed using x-ray diffraction and scanning electron microscopy. The crystal structure of CdTe films was zincblend type with preferential orientation of the (111) plane parallel to the substrate. The $CdCl_2$ treatment appears to increase the grain size of polycrystalline CdTe thin film. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment with $CdCl_2$. The conversion efficiency, however, decreased when heat treatment temperature was too high.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.114.1-114.1
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• 2014

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the p band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy ($E_F$) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about 0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the $E_F$) by 0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and that the electron transfer is limited to that between the Shockley surface state of Cu(111) and the p band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• 한국재료학회지
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• 제9권7호
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• pp.688-694
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• 1999

Ti-6Al-4V 합금을 타겟트로 사용하여 유리 기판위에 dc reactive magnetron sputtering법으로 $N_2$/(Ar+N_2)$ 비, 기전력 및 시간등의 여러 가지 증착 조건에서 Ti-6Al-4V-N 필름을 증착하였고, 각각의 증착 조건에 따른 결정구조 및 우선방위 거동은 X-선 회절장치를 사용하여 조사하였다. Ti-6Al-4V-N 필름은 본질적으로 fcc 결정구조의 $\delta$-TiN에 Al과 V이 결함으로서 고용된 변형된 형태의 $\delta$-TiN구조이고, TiN의 격자상수(4.240 )보다 작은 값을 나타내었는데, 이는 Ti(1.47 )에 비하여 상대적으로 원자반경이 작은 Al(1.43 )과 V (1.32 )이 Ti의 격자위치에 치환된 결과이다. 그리고 Ti-6Al-4V-N 필름은 $_N2$가스 분압이 감소됨에 따라 (111) 우선방위 성장거동을 하였을 뿐만아니라 증착시간의 증가에 따라 뚜렷한 (111) 우선방위 성장거동을 나타내었다. 그리고 증착속도 및 결정입도의 거동 또한 여러 가지 증착 조건에 크게 의존한다

• 한국진공학회지
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• 제12권2호
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• pp.123-129
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• 2003

다공질 실리콘(PS)기판 위에 rf-스퍼터링법으로 10~40 nm의 두께의 반 투과성 구리박막을 증착하였다. PS는 p형 (100) 실리콘 웨이퍼를 기판으로 50㎃/$\textrm{cm}^2$의 전류밀도를 사용하여 전해 에칭법으로 양극 산화하여 제작하였다. PS층과 Cu박막의 미세구조를 분석하기 위하여 SEM, AFM 그리고 XRD 분석을 시행하였다. AFM 분석결과 Cu 박막의 RMS roughness 값은 약 1.47nm로 Volmer-Weber 유형의 결정립 성장을 보였으며, 결정립의 성장은 (111) 배향성을 나타냈다. PS층의 PL 스펙트럼은 blue green 영역에서 관찰되었고, Cu 박막 증착 후 0.05eV의 blue shift가 나타났으며, 약간의 강도저하를 보였다. PS/Cu접합구조의 FTIR스펙트럼은 주 피크변화는 없으나 전반적인 강도의 감소를 보였다. I-V 특성곡선으로 본 PS/Cu 접합구조는 ideality factor가 2.77이고 barrier의 높이가 0.678eV인 Schottky 유형의 다이오드 특성을 보였다. PS/Cu 접합구조로 만든 다이오드 제조로 EL특성을 관찰할 수 있었다.

• 한국진공학회지
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• 제6권1호
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• pp.28-35
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• 1997

급속열처리에 따른 (hfac)Cu(VTMS)구리원으로 증착한 구리 박막의 특성개선 효과 와 TiN층의 확산방지 특성의 변화를 고찰하였다. 구리 박막의 특성 변화는 열처리 시간보 다 열처리 온도의 변화에 더 민감하며, 후열처리에 의해 Cu/TiN구조의 전기적 특성과 더불 어 미세구조 변화가 뚜렷하게 나타났다. $400^{\circ}C$이상에서 면저항의 증가가 시작되어 $600^{\circ}C$이 상에서 구리와 TiN의 상호 반응과 구리박막 표면에서의 산화물 형성이 관찰되었다. 후열처 리에 의한 결정립 성장은 (111)배향을 나타내었고, $500^{\circ}C$에서 결정립의 성장이 가장 활발하 게 나타났다. MOCVD-Cu/PVD-TiN구조에서 TiN층의 확산방지 특성을 충분히 유지시키면 서 구리 박막의 전기적 특성을 개선시킬 수 있는 열처리 공정 온도는 $400^{\circ}C$정도가 적정한 것으로 판단되었다.

• 열처리공학회지
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• 제7권1호
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• pp.61-71
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• 1994

This study is to investigate the stress distributions, crystal orientations and magnetic properties during die-upsetting according to working temperature of Nd-Fe-B-Cu alloys. The stress distributions in the specimens during compressing process were calculated by a finite element method program(SPID). The calculated stresses were effective stress (${\sigma}_{eff}$), compression stress(${\sigma}_z$), radial direction stress(${\sigma}_r$) rotational direction stress(${\sigma}_e$) and shear stress(${\tau}_{rz}$). The stress distributions of ${\sigma}_z$, obtained by a computer simulation showed that the stress components causing the magnetic alignment during die-upsetting of the cast magnets were very high at the center-part of a specimen, and decreased toward the periphery-part of a specimen. In view of the above results the magnetic properties should be better at the center-part of a specimen than any other parts. But the measured magnetic properties were better at the mid-part. These results should be due to the fact that the specimens were casted. Normally the magnetic properties are affected by the casting process as well as by the stress levels. ${\sigma}_r$, ${\sigma}_e$ are thought to affect the liquid phase flowing and domain patterns, respectively. The influence of ${\tau}_{rz}$ was trivial, ${\sigma}_{eff}$ distributed similar throughout the specimen. The Nd-rich phase appeared at the peripheral of the specimen where the stress level of ${\sigma}_r$, ${\sigma}_z$, was low or the stress level of ${\sigma}_e$ was high. The Nd-rich phase was squeezed out during die-upsetting. This phase had an effect on the crystal orientation and grain growth. The stress distributions of alloy were irregular at the parts of the specimen where the die contacted with specimen.

• 센서학회지
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• 제8권2호
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• pp.184-188
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• 1999

Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여 $400^{\circ}C$이상에서는 PbTe 박막은 결정성의 박막으로 형성되지 않았다. AFM 이미지로부터 박막의 표면은 작은 granular 결정들과 평탄한 매트릭스로 구성되어 있음이 관찰되었다. 기판온도의 증가에 따라 표면의 입자들이 커지는 것을 알 수 있었다. Hall-effect 측정으로부터 $300^{\circ}C$에서 성장한 PbTe 박막의 전기적 특성은 $3.68{\times}10^{18}cm^{-3}$의 캐리어 농도와 $148\;cm^2/Vs$의 Hall 이동도를 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제31권1호
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• Current Photovoltaic Research
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• 제2권3호
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.