• Journal of the Korean Ceramic Society
• /
• v.35 no.4
• /
• pp.347-354
• /
• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.4
• /
• pp.178-182
• /
• 2012

The grain growth is very important because of its great influence on the various materials properties. Therefore, in this study, the effects of anisotropic grain boundary energy on grain growth in 2-D have been investigated with a large scale phase field simulation model on PC. A $2000{\times}2000$ grid system and the initial number of grains of about 73,000 were used in the computer simulation. The anisotropic ratio of grain boundary energy, ${\sigma}_{max}/{\sigma}_{min}$, has been varied from 1 to 3. As the anisotropy increased, the grain growth exponent, n, increased from 2.05 to 2.37. The grain size distribution showed a central plateau in the isotropic case, and was changed into no central plateau and the increasing population of very small grains in the anisotropic case, resulting from slowly disappearing grains. Finally, simulated microstructures were compared according to anisotropy.

• Journal of the Korean Ceramic Society
• /
• v.30 no.5
• /
• pp.404-410
• /
• 1993

The characterization and sintering behavior of ZnO powders prepared by precipitation method were investigated. ZnO powders were synthesized using the aqueous solutions of ZnCl2 and NH4OH as a precipitation agent, which were crystallized in the shape of plate-like. The grain growth of ZnO(0.68${\mu}{\textrm}{m}$, 1.3${\mu}{\textrm}{m}$ and 3.4${\mu}{\textrm}{m}$) has been studied for temepratures from 100$0^{\circ}C$ to 130$0^{\circ}C$, and the rate of densification was inversely proportional to the ZnO particle size. Densification proceeded slowly by diffusion mechanisms above at 100$0^{\circ}C$. In this work, the grain growth kinetic exponent(n) was 3. The temperature dependence of ZnO grain growth was plotted, and the activation energy of grain growth was 75~85Kcal/mol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.1
• /
• pp.48-56
• /
• 1998

Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.6
• /
• pp.231-238
• /
• 2022

To secure the mechanical strength of porous Al₂O₃ ceramics, which can be utilized for filters and catalyst supports is essential for their functionality and durability. Superior mechanical strength would be obtained by tailoring the densification and grain growth during sintering. This study deals with grain growth behavior of a freeze-casted Al₂O₃ with addition of La₂O₃. In a temperature range between 1400 and 1600℃, variations of average grain size with sintering time and temperature were observed and analyzed with G_tⁿ-G₀ⁿ = kt and with k = k₀exp(-E_a/RT). As a result, n value and activation energy (E_a) for grain growth were calculated as 3 and 489.09 kJ/mol, respectively. These commonly confirms retardation effect of the La addition during sintering of Al₂O₃ porous structure. More accurate analysis on the La effect can be followed to provide useful guidance for the selection of additives for better mechanical strength in Al₂O₃ porous structures.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.43-49
• /
• 1999

In the paper, Significant sintering phenomena at refractory temperature ranges, from $1400^{\circ}C$ to $1700^{\circ}C$, of the pure spinel ($MgAl_{2}O_{4}$) and the experimental data from other researchers are analysed and compared in terms of density ($\rho$), grain growth exponent(n), and activation energy (Q). Similar to the density rewsults, the grain growth results above $1600^{\circ}C$ appear similar for the spinel, but for temperatures lower than about $1600^{\circ}C$ results are distinctly differently grouped. However, the grain growth exponents are different, six for the spinel (below $1600^{\circ}C$), and five at high temperatures(above $1600^{\circ}C$), with the activation energy of 474$\pm$38 kJ/mol below $1600^{\circ}C$, which is very close to the published values, 360~580 kJ/mol.

• Korean Journal of Materials Research
• /
• v.9 no.7
• /
• pp.753-759
• /
• 1999

The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.