• Journal of Welding and Joining
• /
• 제9권4호
• /
• pp.28-39
• /
• 1991

The change of microstructure in the bonded interlayer and mechanical properties of the joints were investigated during Transient Liquid Phase Diffusion Bonding(TLP bonding) of STS304/SM17C and STS304/SM45C couples using Ni base amorphous alloys added boron and prepared alloy as insert metal. Main experimental results obtained in this study are as follows: 1) Isothermal solidification process was completed much faster than theoretically expected time, 14ks at 1473K temperature. Its completion times were 3.6ks at 1423K, 2.5ks at 1473K and 1.6ks at 1523K respectively. 2) As the concentration of boron in the insert metal increased, the more borides were precipitated near bonded interlayer and grain boundary of STS304 side during isothermal solidification process, its products were $M_{23}P(C,B)_6}_3)$ The formation of grain boundary during isothermal solidification process was completed at structural carbon steel after starting the solidfication at STS304 stainless steel. 4) The highest value of hardness was obtained at bonded interface of STS304 side. The desirable tensile properties were obtained from STS304/SM17C, STS304/SM45C using MBF50 and experimentally prepared insert metal with low boron concentration.

• 한국분말재료학회지
• /
• 제1권1호
• /
• pp.79-84
• /
• 1994

The mechanism of activated sintering of tungsten powder was discussed in terms of diffusion and segregation of activator atoms at W grain boundaries. Shrinkage behaviours of W-0.2wt.% Ni, W-0.2wt.% Cu or pure W powder compacts during sintering at low temperatures of 900~ $1200^{\circ}C$ were investigated. It was found that the Cu additive inhibits sintering process causing lower densification than pure W compact while remarkable shrinkage occurred in the Ni added W powder. Such contrary effect was explained by comparing self diffusion processes along Ni or Cu segregated W boundaries in which Ni segregants enhance but Cu atoms retard the migration of W atoms at W boundaries.

• 한국재료학회지
• /
• 제14권6호
• /
• pp.379-388
• /
• 2004

To investigate the effect of D-ferrite on the hot workability and surface defect of STS 304 billets containing 3 wt. % Cu, microstructure observations and high temperature mechanical properties test were carried out for the specimens extracted mainly from raw or oxidized billets. It was found that the total $\delta$-ferrite content has little influence on the hot workability, even though the fracture cracks due to high temperature tension or compression test were initiated and propagated mostly along $\delta$/${\gamma}$ boundary in the specimens. On the other hand, it was supposed that the direct causes of surface defects in the wire rolled from the as-continuously cast billet were the grain boundary embrittlement arose from the deep diffusion of oxygen into the grain boundary, and the oxidation of $\delta$-ferrite connected by a grain boundary to the surface during the billet reheating process as well.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.169-169
• /
• 2000

최근 반도체 소자의 초고집적화 현상에 따라 기존의 Al-base 합금에 대한 한계에 달하면서 그에 대한 대체 물질로 Cu가 관심을 모으게 되었고 그럼으로써 Cu metallization을 위한 많은 연구가 진행되어 왔다. Cu는 Al-base 합금계보다 비저항이 낮고, 녹는점이 높으며, 또한 electromigration 특성이 뛰어난 것으로 알려져 있다. 공학적인 면에서 이미 이들 계에 대한 adhesion 및 전기적 특성에 대한 많은 연구가 있어왔지만, 이들 특성 변화에 대한 물리적 의미를 제공할 만한 기초 자료들이 부족한 상태이다. 본 연구에서는 부도체인 polyimide 박막과 diffusion barrier인 TiN 박막위에서의 Cu 박막성장에 따르는 interface chemical reaction의 변화를 XPS를 이용하여 관찰함으로서 이들 계에 있어서의 adhesion과의 관계를 조사하였다. 그리고 XPS를 이용한 modified surface accumulation method를 적용시켜 TiN diffusion barrier를 통한 Cu의 grain boundary diffusion 상수들을 측정하였다. Cu/TiN system의 경우에는 interface chemical reaction이 일어나지 않았지만 Cu/polymide system에 있어서는 boundary diffusivity는 특히 40$0^{\circ}C$에서 $650^{\circ}C$ 영역에서, Db=60$\times$10-11exp[-0.29/(kBT)]cm2/sec 이었다.

• 한국세라믹학회지
• /
• 제35권4호
• /
• pp.347-354
• /
• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

• 소성∙가공
• /
• 제16권6호
• /
• pp.473-478
• /
• 2007

In this study, a deformation mechanism map of metallic nanocrystalline materials(NCMs) using the phase mixture model is proposed. It is based on recent modeling that appears to provide a conclusive description of the phenomenology and the mechanisms underlying the mechanical properties of NCMs. The proposed models adopted the concept of a 'phase mixture' in which the grain interior and the grain boundaries are treated as separate phases. The volume fraction of this grain boundary 'phase' may be quite appreciable in a NCM. Based on the theoretical model that provides an adequate description of the grain size dependence of plasticity covering all grain size range from coarse down to the nanoscale, the tensile deformation response of NCMs, especially focusing on the deformation mechanisms was investigated. The deformation mechanism map is newly proposed with axes of strain rate, grain size and temperature.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1430-1432
• /
• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2001년도 추계학술대회 논문집
• /
• pp.251-254
• /
• 2001

In this paper, the effect of grain refinement on room temperature ductility of copper was addressed. Recent experimental results have shown that this material, as well as a number of other single-phase metals that are ductile when coarse-grained, loose their ductility with decreasing grain size in the sub micrometer range. A recently developed model in which such materials are considered as effectively two-phase ones (with the grain boundaries treated as a linearly viscous second phase) was applied to analyze stability of Cu against ductile necking. As a basis, Hart's stability analysis that accounts for strain rate sensitivity effects was used. The results confirm the observed trend for reduction of ductility with decreasing grain size. The model can be applied to predicting the grain size dependence of ductility of other metallic materials as well.

• 한국세라믹학회지
• /
• 제29권4호
• /
• pp.65-65
• /
• 1992

12Ce-TZP의 소결에 미치는 CaO의 역할에 대하여 연구하였다. CaO의 첨가는 Ce-TZP의 격자결함구조와 확산의 율속종인 cerium과 zirconium 이온의 확산계수를 변화시켜 치밀화를 촉진시킨다. CaO는 또한 소결과정중 결정립 성장을 억제하며, 이는 소결과정중 임계 이동시 입계로부터의 기공의 분리를 방지함과 동시에 기공으로부터 입계로의 공격자의 빠른 확산을 유지시킴으로써 이론밀도까지의 소결을 가능하게 한다. Ce-TZP의 결정립 성장 억제는 calcium의 입계편석에 의한 입계 이동도의 감소에 의하며, calcium의 입계편석을 AES 분석으로 확인하였다.

• Journal of Welding and Joining
• /
• 제15권3호
• /
• pp.128-135
• /
• 1997

Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.