• Korean Journal of Metals and Materials
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• v.50 no.5
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• pp.395-400
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• 2012

In this study, we have investigated the surface morphology of hydroxyapatite (HA) coated Ti alloy surface using pulsed laser plating. The HA (tooth ash) films were grown by pulsed KrF excimer laser, film surfaces were analyzed for topology, chemical composition, crystal structure and electrochemical behavior. The Ti-6Al-4V alloy showed ${\alpha}$ and ${\beta}$ phase, Cp-Ti showed ${\alpha}$ phase and the HA coated surface showed HA and Ti alloy peaks. The HA coating layer was formed with $1-2{\mu}m$ droplets and grain-like particles, particles which were smaller than the HA target particle, and the composition of the HA coatings were composed of Ca and P. From the electrochemical test, the pitting potential (1580 mV) of HA coated Ti-6Al-4V alloy was higher than those of Cp-Ti (1060 mV) and HA coated Cp-Ti (1350 mV). The HA coated samples showed a lower current density than non-HA coated samples, whereas, the polarization resistance of HA coated samples showed a high value compared to non-HA coated samples.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Journal of the Mineralogical Society of Korea
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• v.31 no.4
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• pp.287-293
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• 2018

Amorphous silica ($SiO_2$) silt grains were found in some soils of Korean Peninsula. Scanning electron microscopy of polished section of soils revealed ellipsoidal amorphous $SiO_2$ grains with numerous submicron pores concentrated in the interior. Their amorphous structure was confirmed by lattice imaging and electron diffraction under transmission electron microscope. Amorphous $SiO_2$ grains were not found in the eolian sediment of the Chinese loess plateau. Although the origin of the amorphous $SiO_2$ grain is uncertain, they are likely either phytolith or weathering product of volcanic ash. The amorphous $SiO_2$ silt grains are not useful as a tracer of long-range transport mineral dust in soils.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• Korean Journal of Materials Research
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• v.31 no.1
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• pp.23-28
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• 2021

The purpose of this study is to prepare WO3 nanopowders by high-energy milling in mixture gas (7 % H2+Ar) with various milling times (10, 30, and 60 min). The phase transformation, particle size and light absorption properties of WO3 nanopowders during reduction via high-energy milling are studied. It is found that the particle size of the WO3 decreases from about 30 ㎛ to 20 nm, and the grain size of WO3 decreases rapidly with increasing milling time. Furthermore, the surface of the particles due to the pulverization process is observed to change to an amorphous structure. UV/Vis spectrophotometry shows that WO3 powder with increasing milling times (10, 30, 60 min) effectively extends the light absorption properties to the visible region. WO3 powder changes from yellow to gray and can be seen as a phenomenon in which the progress of the color changes to blue. The characterization of WO3 is performed by high resolution X-ray diffractometry, Field emission scanning electron microscopy, Transmission electron microscopy, UV/Vis spectrophotometry and Particle size analysis.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.154-158
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• 2001

The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.1-5
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• 2008

This study has been investigated the deformation behavior of a hot-extruded Mg-Zn-RE (RE: rare earth elements) alloy containing $Mg_{12}$(RE) particles at the elevated temperatures. The particles are intrinsically produced by breaking the eutectic structure of the alloy during the hot-extrusion process. The grain size of the extruded Mg-Zn-RE alloy developed via dynamic recrystallization is around $10{\mu}m$. Under the heat treatment at 200o C up to 48 hr, no change has been observed on the microstructure and mechanical properties due to the pinning effect of the thermally stable particles. Under the tensile test condition in the initial strain-rate range of $1\times10^{-3}s^{-1}$ and the temperature range up to $200^{\circ}C$, the alloy shows yield strength of 270 MPa and elongation to failure around 9% at room temperature and yield strength of 135 MPa at $200^{\circ}C$. Furthermore, although the alloy contains large amount of the second phase particles around 15%, it shows excellent hot-workability possibly due to the presence of the thermally stable interface between the particles and the matrix.

• Korean Journal of Metals and Materials
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• v.46 no.9
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• pp.563-571
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• 2008

The influence of annealing treatment on dynamic deformation behavior of ultra-fine grained aluminum alloys was investigated in this study. After equal-channel angular pressing at $200^{\circ}C$, most of the grains were considerably reduced to nearly equiaxed grains of $0.3{\mu}m$ in size. With an increment of various annealing treatments for 1 hour, resultant microstructures were found to be fairly stable at temperatures up to $200^{\circ}C$, suggesting that static recovery would be dominantly operative, whereas grain growth was pronounced above $250^{\circ}C$. The tensile test results showed that yield and ultimate tensile strengths decreased, but elongation-to-failure and strain hardening rate increased with increasing annealing temperature. The dynamic deformation behavior retrieved with a series of torsional tests was explored with respect to annealed microstructures. Such mechanical response was analyzed in relation to resultant microstructure and fracture mode.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.395-400
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• 2019

This study was conducted on the structural and electrical properties of (Ba0.7Sr0.3)TiO3 thin films prepared by the sol-gel and spin-coating methods in order to investigate their applicability to electrocaloric devices. All specimens showed a tetragonal crystal structure and lattice constants of a = 3.972 Å, c = 3.970 Å. The mean grain size of specimens sintered at 800 ℃ was about 30 nm, and the average thickness of 5 times coated specimens was 304~311 nm. In the specimen sintered at 750 ℃, The relative dielectric constant and loss of specimens measured at 20 ℃ were 230 and 0.130, respectively, while dependence of the dielectric constant on unit DC voltage was -8.163 %/V. The remanent polarization and coercive fields were 95.5 μC/㎠ and 161.3 kV/cm at 21 ℃, respectively. And, the highest electrocaloric property of 2.69 ℃ was observed when the electric field of 330 kV/cm was applied.