• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.272-278
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• 2013

In this study, a c-axis displacement and an internal stress of the sapphire crystal of 300 mm length have been analyzed numerically and the crystal length having no sub-grain defects have been predicted. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The simulation results show that the c-axis displacement difference between the original hot zone and others originated from the sub-grain defect formations in the sapphire ingot. When the crystal grown by CZ (Czochralski) grower using the modified hot zone, the crystal length having no sub-grain defects was increased about 57 mm maximum than the original one. When the simulation results compared with the experimental one, the predicted crystal length having no sub-grain defects were well corresponded with the experiment one in c-axis wafer of the 300 mm sapphire ingot. Therefore the sapphire crystal of 250 mm length having no sub-grain defects was successfully grown by CZ process.

• Transactions of Materials Processing
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• v.10 no.4
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• pp.338-346
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• 2001

Evaluation of microstructural changes is important for process control during open die forging of heavy ingots. The control of forging parameters, such as shape of the dies, reduction, temperature and sequence of passes, is to maximize the forging effects and to minimize inhomogeneities of mechanical properties. The hot working die steel is produced by using the multistage open die forging. The structure is altered during forging by subsequent Precesses of plastic deformation, recrystallization and grain growth. A numerical analysis using an rigid visco-plastic finite element model was performed to predict microstructural evolution of hot working die steel.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.6
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• pp.783-789
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• 2003

An experimental method to investigate the fracture strength and fracture toughness for the silicon nitrides sintered at various sintering temperature is established. The erosion rate for these materials in the various concentration of NaOH solution is also investigated. In result, the fracture strength of Si3N4 is decreased with the increase of sintering temperature. On the other hand, the fracture toughness KIC is increased with the increase of sintering temperature. The erosion rate of silicon nitride in the NaOH solution depend largely on the grain size and the concentration of NaOH solution. The erosion rate of silicon nitride sintered at $1800^{\circ}C$ was much higher than that at $1950^{\circ}C$. These results are due to the unique columnar structure of silicon nitride.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.131-135
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• 2001

Evaluation of microstructural changes during open die forging of heavy ingots is important for process control. The objective of the control of forging parameters, such as shape of the dies, reduction, temperature and sequence of passes, is to maximize the forging effects md to minimize inhomogeneities of mechanical properties. The hot working die steel is produced by using the multistage open die forging. The structure is altered during forging by subsequent processes of plastic deformation, recrystallization and grain growth. A numerical analysis using an rigid visco-plastic finite element model was performed to predict microstructural evolution of hot working die steel.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.7
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• pp.2141-2147
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• 1996

The strength of material is scattered owing to the inhomogenity of microstructure, in spite of the same material. Therefore, in order to design the mechanical structure with the reliability engineering, it is important to grasp the statistical nature of material strength. In this paper, effects of grain sezes for the statistical nature of the fatigue crack growth was discussed. And the statistical nature of mechanical properties was compared with the statistical nature of the fatigue crack growth rate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.109-116
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• 1999

ZnO Varistor is an electronic ceramic device to absorb the surge voltage from low voltage to high. To investigate the puncture mechanism occurring in NnO varistor, the Voronoi simulation for formulating the relation between the applied voltage and the increase of the temperature inside grain is applied. The Voronoi network can realize the structure of the practical varistor better than the established simple network. Using the current through each grain and the voltage applied to the grain, Joule heating energy is calculated and the phenomenon that the puncture occurs can be analyzed quantitatively by simulating the electric and thermal characteristics according to the externally applied pulsed voltage.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.499-504
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• 2002

The microstructural change associated with the hardness profile in friction stir welded, age-hardenable 6005 Al alloy had been evaluated. Frictional heat and plastic flow during friction stir welding created the fine recrystallized grain (Stir Zone, SZ), the elongated and recovered grain (Thermo-Mechanical Affected Zone, TMAZ) in the weld zone. Heat affected zone (HAZ), which could be only identified by hardness test because there is no difference in the grain structure compared with that of the base metal, was formed beside the weld zone. A softened region had been formed near the weld zone during friction stir welding process. The softened region was characterized by the dissolution and coarsening of the strengthening precipitate during the friction stir welding. The sound joints of 6005 Al alloys were successfully formed under a wide range of the friction stir welding conditions.

• Transactions of Materials Processing
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• v.16 no.5 s.95
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• pp.406-411
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• 2007

The microstructure and the hardness of interstitial free steel processed by equal channel angular pressing (ECAP) was investigated experimentally. ECAP processing of route A and route C was compared with regard to grain refinement by transmission electron micrographs. Micro hardness evolution was correlated with the gram structure produced by ECAP. Especially, the effects of the ECAP processing temperature and the number of processing passes were discussed in terms of grain refinement.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.47 no.1
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• pp.13-20
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• 2002

Bread baking parameters and relationships between bread baking properties and flour characteristics were evaluated for two years, 1997 and 1998, and at two locations, Suwon and Deokso, with Korean winter wheat cultivars and lines. Among the bread baking parameters, lightness of crumb grain showed differences between years. No significant differences were found in dough mixing time, bread loaf volume, crumb grain score or firmness. Keumkangmil, Suwon 278 and Tapdongmil showed higher bread loaf volume, good structure of crumb grain and softer crumb firmness. However, compared to commercial flours for baking, cultivar means averaged over years and locations of nineteen Korean winter wheats showed poor bread baking quality because of low protein content and unsuitable protein quality. Protein content and flour swelling volume showed better relationships with the bread baking parameters than other flour characteristics. Friabilin-absence lines showed softer crumb firmness than those of friabilin-presence lines.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.