• 센서학회지
• /
• 제8권2호
• /
• pp.184-188
• /
• 1999

Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여 $400^{\circ}C$이상에서는 PbTe 박막은 결정성의 박막으로 형성되지 않았다. AFM 이미지로부터 박막의 표면은 작은 granular 결정들과 평탄한 매트릭스로 구성되어 있음이 관찰되었다. 기판온도의 증가에 따라 표면의 입자들이 커지는 것을 알 수 있었다. Hall-effect 측정으로부터 $300^{\circ}C$에서 성장한 PbTe 박막의 전기적 특성은 $3.68{\times}10^{18}cm^{-3}$의 캐리어 농도와 $148\;cm^2/Vs$의 Hall 이동도를 나타내었다.

• 공업화학
• /
• 제9권4호
• /
• pp.481-485
• /
• 1998

마이크로파 열원을 이용하여 황산 용액에서 카올린을 가열 반응시켜 무기고분자인 수화 황산 알루미늄을 합성하였다. 하소된 카올린으로부터 알루미나의 최대 추출율은 재래식 열공정 ($80^{\circ}C$, 1 M 및 240분)에서 72.8%이었고, 마이크로파 공정 ($90^{\circ}C$, 1 M 및 60분)에서 99.9%이었다. 재래식 열공정에서와는 달리 마이크로파 공정에서 추출 합성된 수화 황산 알루미늄 시료는 빠른 결정립 성장에 의해 거대 크기의 판상으로 이루어진 층상구조로 존재하였다. 마이크로파와 재래식 열공정에서 합성하여, $1100^{\circ}C$에서 하소된 시료들을 모두 구형으로 응집된 분말상의 ${\gamma}-Al_2O_3$ 존재하였고, 이 시료들의 비표면적은 각각 113.5와 $106.6m^2/g$이었고, 입자의 평균 입경은 각각 46.5와 $26.3{\mu}m$이었다.

• 한국주조공학회지
• /
• 제15권5호
• /
• pp.469-476
• /
• 1995

The effects of Cr, Mo or B additions were investigated on $B2{\leftrightarrow}DO_3$ structural transition temperature $(T_C)$ and mechanical properties of Fe-28at.%Al. The raw materials were arc-melted in vacuum and then subjected to the following heat-treatments to maximize the $DO_3$ ordered structure : $1000^{\circ}C/7days$, slowly cooled to $500^{\circ}C$ and then held for 5 days. In the effect on the grain refinment, the addition of alloying element B was the most effective. The addition of Cr or Mo had little effect. When 1at.%Mo was added, $T_c$ increase about $30^{\circ}C$, but Cr had a very little effect on $T_c$. On the contrary, when B was added, $T_c$ was apt to come down minutely. In the additional effect of alloying element on the mechanical properties, Cr was apt to decrease the microvickers hardness and yield strength, Mo and B didn't have much effect. In the case of compressure strength test, the effect of the environment on the yield strength was contrary to the result of the tensile strength test.

• The Korean Journal of Ceramics
• /
• 제6권3호
• /
• pp.258-261
• /
• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Transactions on Electrical and Electronic Materials
• /
• 제6권6호
• /
• pp.245-248
• /
• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.54-58
• /
• 1996

In this paper, the structure, dieletric and piezoelectric properties of Pb(Fe$_{\frac{1}{2}}$/Sb$_{\frac{1}{2}}$$O_3$+ Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics were investigated and the effects of donor Nb$^{+5}$ on these properties were characterized for the application of the actuator. In xPb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$)O$_3$+ (1-x) Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics, tetragonality decreased as x and Nb$_2$O$_{5}$ wt% were increased. In 0.05Pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}$}$)O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system, grain size was smallest but showed best dielectric and piezoelectric properties. The specimen sintered at 120$0^{\circ}C$ in 0.05pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$ )O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$+ Nb$_2$O$_{5}$ 0.6wt% exihibited best piezoeletric properties such as $K^{p}$ =64%, d$_{33}$ =490 [$\times$10$^{-12}$ C/N] and strain was 1320[$\times$10$^{-6}$ Δ$\ell$/$\ell$]at AC 6kV/cm

• 한국전기전자재료학회논문지
• /
• 제16권11호
• /
• pp.979-986
• /
• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

• 한국재료학회지
• /
• 제28권5호
• /
• pp.301-307
• /
• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• 한국자기학회지
• /
• 제5권1호
• /
• pp.48-53
• /
• 1995

동시 열진공증착한 Ag-Co 미세입상 합금박막의 구조, 자기적 성질 및 거대자기저항 현상에 관하여 연구하였다. 증착된 상태에서 합금박막은 과포화된 Ag 기지와 석출된 Co 입자들이 공존하는 준안정한 fcc 구조를 이루고 있다. Co의 양이 20에서 55 at.%로 증가함에 따라 Ag 기지의 입자크기는 평균 147에서 $67{\AA}$으로 감소하였고 Ag 기지에 Co의 고용량은 2.5에서 6.7%로 증가하였다. 25 at.% 이하의 조성을 갖는 합금박막은 주로 초상자성 특성을 보였으며 그 이상의 조성에서는 초상자성과 강자성이 혼합된 거동을 보였다. 증착된 상태의 30 at.% 합금 박막에서(상온, 10 kOe) 최대 19%의 자기저항비를 얻었다. 증착된 상태에서 대부분의 코발트가 석출되어 있기 때문에 Cu-Co계와는 달리 열처리에 의해 MR비의 증가는 보이 지 않았다.

• 한국재료학회지
• /
• 제23권11호
• /
• pp.638-642
• /
• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.