• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.276-280
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• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

• 한국세라믹학회지
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• 제40권2호
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• pp.109-112
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• 2003

The grain-boundary microcracking materials in the system $Al_2$TiO$_{5}$ -ZrTiO$_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$ K loin compared to 8.29$\times$10$^{6}$ K of pure ZrTiO$_4$and 0.68$\times$10$^{6}$ K of polycrystalline $Al_2$TiO$_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of $Al_2$TiO$_{5}$ , 9.70$\times$10$^{6}$ K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal a ies of the $Al_2$TiO$_{5}$ phase.

• 한국세라믹학회지
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• 제40권3호
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• pp.317-321
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• 2003

The grain-boundary microcracking materials in the system A1$_2$Ti $O_{5}$ -ZrTi $O_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$K compared to 8.29$\times$10$^{-6}$K of pure ZrTi $O_4$and 0.68$\times$10$^{-6}$K of polycrystalline A1$_2$Ti $O_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of A1$_2$Ti $O_{5}$ , 9.70$\times$10$^{-6}$K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal axes of the A1$_2$Ti $O_{5}$ phase.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1716-1724
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• 2018

Single crystal of organic lead halide ($CH_3NH_3PbX_3$; $CH_3NH^+_3$ = methylammonium (MA), $X=Cl^-$, $Br^-$, $I^-$) is the best candidate for material intrinsic property studies due to no grain boundary and high crystal quality than the film having a lot of grain boundary and surface defects. The representative crystallization methods are inverse temperature crystallization (ITC) and anti-solvent vapor assisted crystallization (AVC). Herein, we report bandgap modulated organic lead halide single crystals having a bandgap ranging from ~ 2.1 eV to ~ 3 eV with ITC and AVC methods. The bandgap modulation was achieved by controlling the solvents and chloride-to-bromide ratio. Structural, optical and compositional properties of prepared crystals were characterized. The results show that the crystals synthesized by the two crystallization methods have similar properties, but the halide ratios in the crystals synthesized by the AVC method are controlled more quantitatively than the crystals synthesized by ITC.

• 방사성폐기물학회지
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• 제3권4호
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• pp.301-307
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• 2005

조사후 핵연료 가열(PIA장비)를 이용한 고연소도 UO2 사용후 핵연료의 산화 및 가열후 미세조직의 변화를 관찰하였다. 울진 2호기에서 한국원자력연구소 조사후시험시설로 이송된 국산 경수로용 고연소도 사용후 핵연료는 봉평균 연소도가 57,000 MWd/tU-rod avg.이였다. 본 시험에 사용된 시편은 국부연소도 65,000 MWd/tU UO2 소결체의 고형체 200 mg을 사용하였다. 본 시편을 사용후 핵 연료 가열(PIA) 시험장비를 이용하여 핫셀 내에서 3시간의 산화시험과 연속적으로 $1,400^{\circ}C$ 까지 가열하였다. 결정립경계까지의 산화를 위하여 $500^{\circ}C$에서 헬륨 50 ml, 표준공기 100 ml를 흔합한 산화분위기로 3시간을 유지하였다. 핵분열기체 방출거동을 알기위해 시험 전과정중에 85Kr의 방출량을 베타 측정기와 감마 측정기를 이용하여 실시간으로 측정 하였다. 가열시험이 종료된 후 전자주사현미경을 이용하여 미세구조의 변화를 관찰하였다. 시험결과 가열하는 동안 핵분열생성물은 UO2기지의 결정립경계와 표면으로 이동된 것을 관찰하였다. 이 시편은 환원과정을 통하여 재구조화 되었고, $5\~10\;{\mu}m$ 정도의 결정립크기를 가진 것으로 나타났다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.293-297
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• 2000

Multiseeding with (100)/(100) grain junctions of top-seeded melt growth (TSMG) processed YBCO superconductors was studied. The effect of the number of seeds and the distance between two seeds on the levitation forces and the trapped magnetic fields of the TSMG-processed YBCO samples was investigated. Multiple seeding shortened the processing time for the fabrication of TSMC-processed YBCO superconductors. The large magnetic field was trapped at the grain junction when two seeds was placed without spacing, while the amount of the magnetic field decreased when the seed distance increased. This is attributed to the increased amount of the residual melt phases around the grain junctions.

• 한국세라믹학회지
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• 제31권5호
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• 한국세라믹학회지
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• 제31권7호
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• pp.739-744
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• 1994

The B4C-C system was investigated to gain an understanding of the sintering behaviors of B4C. In order to get sintered density of 97% TD, sintering temperature of 225$0^{\circ}C$ was necessary. Since such a high temperature operation is actually difficult on a commercial basis, our objective was to examine the possibility of decreasing the sintering temperature by adding SiC. The addition of SiC in B4C increases the sintering rate about at 210$0^{\circ}C$ and results in a fine microstructure with more than 98% relative density on 55 wt% B4C-40wt% SiC-5 wt% C composition. The probability of liquid phase sintering was investigated, but the evidences of liquid phase formation were not observed with XRD and TEM observation. It was proposed that the addition of SiC and carbon to B4C reduce interface energy during sintering, which results in enhanced grain-boundary diffusion. Thus, the enhanced grain-boundary diffusion and retarded grain growth by SiC improve densification.

• Nuclear Engineering and Technology
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• 제28권3호
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• pp.229-246
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• 1996

A mechanistic model has been developed to predict the release behavior of fission gas during steady-state irradiation of LWR UO$_2$ fuel. Under the assumption that UO$_2$ grain surface is composed of fourteen identical circular faces and grain edge bubble can be represented by a triangulated tube around the circumference of three circular grain faces, it introduces the concept of continuous formation of open grain edges tunnels that is proportional to grain edge swelling. In addition, it takes into account the interaction between the gas release from matrix to grain boundary and the reintroduction of gas atoms into the matrix by the irradiation-induced re-solution of grain face bubbles. It also treats analytically the behavior of intragranular, intergranular, and grain edge bubbles under the assumption that both intragranular and intergranular bubbles are uniform in both radius and number density. Comparison of the present model with experimental data shows that the model's prediction produces reasonable agreement for fuel with centerline temperatures of 1000 to 140$0^{\circ}C$, wide scatter band for fuel with centerline temperatures lower than 100$0^{\circ}C$, and underprediction for fuel with centerline temperatures higher than 140$0^{\circ}C$.

• 한국세라믹학회지
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• 제35권4호
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• pp.347-354
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• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.