• Title/Summary/Keyword: Grain Boundary

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Radiation induced grain boundary segregation in ferritic/martensitic steels

  • Xia, L.D.;Ji, Y.Z.;Liu, W.B.;Chen, H.;Yang, Z.G.;Zhang, C.;Chen, L.Q.
    • Nuclear Engineering and Technology
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    • v.52 no.1
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    • pp.148-154
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    • 2020
  • The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.

Effects of Sintering Conditions on the Electrical Conductivity of 1 wt% Y2O3-Doped AlN Ceramics (1 wt% Y2O3 첨가계 AlN 세라믹스의 소결 조건에 따른 전기전도도)

  • Lee, Won-Jin;Lee, Sung-Min;Shim, Kwang-Bo;Kim, Hyung-Tae
    • Journal of the Korean Ceramic Society
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    • v.44 no.2 s.297
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    • pp.116-123
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    • 2007
  • Electrical properties of AlN ceramics sintered with 1 wt% $Y_2O_3$ have been investigated. From the impedance spectroscopy, electrical conductivity of grain boundary was found to be much lower than that of grain. DC conductivity measurement showed the electrode polarization effects caused by blocking electrode. The heat-treatment at $1700^{\circ}C$ of the specimen sintered at $1850^{\circ}C$ transformed continuous pain boundary phases along triple boundary junctions into isolated particles in grain comers. The heat-treatment induced decreases both in grain and grain boundary conductivity, and in DC electrical conductivities. From the analysis on the transference number, ionic conductivity was shown to be more dominant than electron conductivity, which was due to ion compensation mechanism during oxygen incorporation into grain.

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels (11 wt% 크롬이 함유된 Ti 첨가 페라이트스테인리스강의 입계부식에 미치는 규소의 영향)

  • Hyun, Youngmin;Kim, Heesan
    • Corrosion Science and Technology
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    • v.12 no.6
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    • pp.265-273
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    • 2013
  • Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than $650^{\circ}C$ and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

Influence of Grain Boundary on the Electrical Properties of $WO_3$-doped $SrTiO_3$ ($WO_3$를 첨가한 $SrTiO_3$의 전기적 성질에 미치는 결정립계의 영향)

  • 유인규;김윤호;김효태;변재동
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.35-40
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    • 1996
  • The influence of grain boundary on the electrical properties of WO3-doped SrTiO3 ceramics has been investi-gated. From the result resistivity and capacitance of grains and boundaries were obtained by employing impedance spectrocopy. And the temperature dependance of capacitance of WO3-doped SrTiO3. was influenced directly by the variation of grain boundary capacitance. It was also found by impedance spectroscopy that the dispersion frequency characteristics showed discernibly that the resistivity of the specimen varied with WO3 content.

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Analysis of Creep Crack Growth at High-Temperature Components by Diffusive Growth Model of Grain Boundary Cavities (I)-Effect of Grain Boundary Cavitation on Stress Field and Crack Growth Rate- (입계기공의 확산성장 모델을 이용한 고온기기의 크립균열전파해석(1)-응력장 및 균열전파속도에 미치는 입계기공의 영향-)

  • Jeon, Jae-Young
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.4
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    • pp.1177-1185
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    • 1996
  • The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.

Strain Rate Dependence of Plastic Deformation Properties of Nanostructured Materials (나노구조재료의 소성변형 성질의 변형률속도 의존성)

  • Yoon Seung Chae;Kim Hyoung Seop
    • Transactions of Materials Processing
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    • v.14 no.1 s.73
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    • pp.65-70
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    • 2005
  • A phase mixture model was employed to simulate the deformation behaviour of metallic materials covering a wide grain size range from micrometer to nanometer scale. In this model a polycrystalline material is treated as a mixture of two phases: grain interior phase whose plastic deformation is governed by dislocation and diffusion mechanisms and grain boundary 'phase' whose plastic flow is controlled by a boundary diffusion mechanism. The main target of this study was the effect of grain size on stress and its strain rate sensitivity as well as on the strain hardening. Conventional Hall-Petch behaviour in coarse grained materials at high strain rates governed by the dislocation glide mechanism was shown to be replaced with inverse Hall-Petch behaviour in ultrafine grained materials at low strain rates, when both phases deform predominantly by diffusion controlled mechanisms. The model predictions are illustrated by examples from literature.

Grain Boundary Protonic Conductivity in Highly Dense Nano-crystalline Y-doped BaZrO3

  • Park, Hee-Jung;Munir, Zuhair A.;Kim, Sang-Tae
    • Journal of the Korean Ceramic Society
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    • v.47 no.1
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    • pp.71-74
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    • 2010
  • We have investigated protonic conduction in highly dense (>98%) polycrystalline Y-doepd $BaZrO_3$ (BYZ) ceramic with an average grain size of ~85 nm. It is observed that the protonic conductivity across the grain boundaries in this nano-crystallilne BYZ (n-BYZ) is significantly higher than the microcrystalline counterpart. Such a remarkable enhancement in grain boundary conductivity results in high overall conductivity that may allow this chemically stable protonic conductor to serve as a solid electrolyte for low-temperature solid oxide fuel cell applications.

Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics (SiO2 첨가가 AIN 세라믹스의 고온 비저항에 미치는 영향)

  • Lee, Won-Jin;Kim, Hyung-Tae;Lee, Sung-Min
    • Journal of the Korean Ceramic Society
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    • v.45 no.1
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    • pp.69-74
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    • 2008
  • The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

Molecular Theory of Plastic Deformation (II). Applications (소성변형의 분자론 (제2보). 응용)

  • Kim, Chang Hong;Ree Taikyue
    • Journal of the Korean Chemical Society
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    • v.21 no.5
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    • pp.339-352
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    • 1977
  • The authors' theory developed in the preceding Paper 1 was applied to plastic deformation of ceramics, metals, alloys and single crystals. For polycrystalline substances, the flow mechanisms due to dislocation movement and grain boundary movement appear together or separately according to the experimental conditions whereas for single crystals, only the mechanism of dislocation movement appears. The parameters appearing in the flow equations $({\alpha}_{d1},\;1/{\beta}_{d1})and\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2), and the activation enthalpies ${\Delta}H_{k1}^{\neq}$ (k = d or g) were determined and tabulated. Here, the subscript d1 indicates the first kind of dislocation flow units and gj expresses the jth kind of grain boundary flow units. The predictions of the theory were compared with experiment with good agreement. Concerning the activation enthalpies, it was found that ${\Delta}H_{d1}^{\neq}$ 〉{\Delta}H_{g1}^{\neq}$ and that the former agrees with the activation enthalpy for bulk self-diffusion whereas the latter agrees with the activation enthalpy for grain boundary self-diffusion. These facts support the adequacy of the authors' theory which is considered as a generalized theory of plastic deformation.

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