• 한국재료학회지
• /
• 제29권12호
• /
• pp.753-756
• /
• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• 한국세라믹학회지
• /
• 제28권7호
• /
• pp.525-530
• /
• 1991

The effects of 0.15mol% Y2O3 doped semiconducting (Ba1-xPbx)TiO3 ceramics with 0.5 mol% Pb5Ge3O11 as sintering additives have been investigated as function of Pb contents (from 0.05 mol to 0.3 mol) and sintering temperatures (from 1050$^{\circ}C$ to 1200$^{\circ}C$). As the Pb content increases in the (Ba1-xPbx)TiO3 system, the size and resistance of the grain increase but the capacitance of the grain boundary decreases due to the formation of liquid phase during the sintering. And with increasing the sintering temperatures, the resistance of the grain decreases but the capacitance of the grain boundary increases. The PTCR effects decrease with increasing the Pb content and the sintering temperature.

• 한국산학기술학회논문지
• /
• 제5권3호
• /
• pp.210-217
• /
• 2004

본 연구는 기존 반도체 단위공정의 실리콘 중심 CAD 환경을 다결정실리콘 중심의 환경으로 전환하는 방법론에 대해 제안하였다. 다결정실리콘 공정에서의 확산과 이온도핑에 의한 불순물 이동에 관련하여 결정립내부와 결정립계상에서의 확산을 동시에 고려하는 이중흐름(two-stream)모델을 채택하고, 이와 관련된 파라미터들의 민감도 분석을 통하여 다결정실리콘 컴퓨터 시뮬레이션 환경을 재구성하였다. 시뮬레이터의 캘리브레이션 과정을 거친 결과 다결정실리콘에 대한 SIMS 데이터와 전반적으로 잘 일치하였다.

• Journal of Welding and Joining
• /
• 제19권3호
• /
• pp.325-333
• /
• 2001

The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.338-338
• /
• 2011

최근 FPD (Flat Pannel Display) 시장이 커짐에 따라 고효율, 저비용 제작 공정이 화두로 떠오르고 있다. ELA (Excimer Laser Annenling)을 이용한 LTPS (Low Temperature Poly Silicon) 공정은 mobility와 전류 점멸비 등에서 장점을 가지지만, 고비용, 대면적과 short-range에서 uniformity가 어렵다는 단점이 있다. 이를 극복하기 위한 방법으로 dLTA (diode Laser Thermal Annealing) 공정에 대한 연구가 진행되고 있다. 본 연구에서는 Flexible Display을 만들기 위한 방법으로 dLTA 공정을 진행하였다. 이 방법은 PI (Poly imide) 기판 위에 a-Si을 ICP CVD로 증착시킨 후, Diode Laser (980 nm)를 이용한 annealing을 통하여 a-Si이 poly-Si으로 결정화가 되는 것을 확인하였고, 에너지 조사량에 따른 grain boundary와 grain size을 통하여 비교 분석하였다. 실험 결과 ELA 공정을 이용한 것과 버금가는 실험 결과를 얻을 수 있었다.

• 한국세라믹학회지
• /
• 제37권4호
• /
• pp.338-344
• /
• 2000

Grain boundary chemistry and electrical characteristics of polycrystalline BaTiO3 ceramics, which were prepared with sol-gel surface-coated semiconducting powders, were investigated. Mn ions were coated on the powder surface by sol-gel coating-techniques. The additives coated on the surface of the powders were observed to be present near the grain boundaries of the ceramics. The ceramics exhibit the PTCR characteristics with a resistivity jump ratio(Pmax/Pmin) of about 2$\times$103. With raising the temperature from room temprature to 20$0^{\circ}C$, the oxidation state of the Mn ions varied from Mn3+ to Mn2+ in the coating layers. Near the grain boundaries an excessive negative charge layer of about 20nm was formed.

• 한국재료학회지
• /
• 제14권6호
• /
• pp.379-388
• /
• 2004

To investigate the effect of D-ferrite on the hot workability and surface defect of STS 304 billets containing 3 wt. % Cu, microstructure observations and high temperature mechanical properties test were carried out for the specimens extracted mainly from raw or oxidized billets. It was found that the total $\delta$-ferrite content has little influence on the hot workability, even though the fracture cracks due to high temperature tension or compression test were initiated and propagated mostly along $\delta$/${\gamma}$ boundary in the specimens. On the other hand, it was supposed that the direct causes of surface defects in the wire rolled from the as-continuously cast billet were the grain boundary embrittlement arose from the deep diffusion of oxygen into the grain boundary, and the oxidation of $\delta$-ferrite connected by a grain boundary to the surface during the billet reheating process as well.

• 센서학회지
• /
• 제1권1호
• /
• pp.67-75
• /
• 1992

$BaTiO_{3}$ PTC 서미스터를 제조하여 그 전기적 특성을 조사하였다. PTC 서미스터의 저항률은 $20^{\circ}C$에서 $200^{\circ}C$까지 $20^{\circ}C$ 간격으로 측정되었다. 이 시편의 ac 복소 임피던스 분석을 통하여 PTC 서미스터의 입계저항, 입계정전용량, bulk 저항 등을 조사하였다. 전자현미경을 사용하여 grain을 확인하고 평균 입경을 구하였으며 측정된 평균 입경은 $3.8{\mu}m$에서 $8.8{\mu}m$까지 되었다. 평균 입경은 소결온도가 높을수록 커지는 경향을 보였으며 최대저항률 증가비는 $4{\times}10^{5}$ 정도였다. Bulk 저항률은 소결온도가 $1340^{\circ}C$ 이상일 경우는 측정온도가 증가함에 따라 감소하였다. 측정온도가 증가할수록 입계저항은 n의 지수함수적으로 증가하였으며, 입계정전용량은 감소하고, 입계의 전위 장벽은 증가하였다. 입계전하밀도는 측정온도가 올라갈수록 증가하였으나, 측정온도가 약 $110^{\circ}C$ 이상일 경우 더 이상 증가하지 않았다.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 춘계학술강연 및 발표대회강연 및 발표논문 초록집
• /
• pp.45-45
• /
• 2006

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 1999년도 춘계연구발표회 논문개요집
• /
• pp.26-27
• /
• 1999