• Title/Summary/Keyword: Grain Boundary

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Enhanced Superplasticity of Two-phase Titanium Alloys by Microstructure Control (2상 타이타늄 합금의 미세조직 제어를 통한 초소성 특성 향상)

  • Park, C.H.;Lee, C.S.
    • Transactions of Materials Processing
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    • v.19 no.1
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    • pp.5-10
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    • 2010
  • The current understanding for phase/grain boundary sliding and low-temperature/high-strain rate superplasticity of two-phase titanium alloys is summarized. The quantitative analysis on boundary sliding revealed increased sliding resistance on the order of ${\alpha}/{\beta}\;\ll\;{\alpha}/{\alpha}\;{\approx}\;{\beta}/{\beta}$ boundary, hence, led to the conclusion that approximately 50% alpha(or beta) volume fraction and/or grain refinement is beneficial for obtaining large superplastic elongation at low temperature and/or high strain rate. To predict the temperature for 50% alpha volume in various alpha/beta Ti, artificial neural network was applied. Finally, much enhanced superplasticity was achieved through grain refinement utilizing dynamic globularization.

Cr-Mo鋼 熔接熱影響部의 破壞靭性과 熔接入熱量에 관한 硏究 II

  • 임재규;정세희
    • Journal of Welding and Joining
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    • v.5 no.2
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    • pp.9-16
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    • 1987
  • Post weld heat treatment (PWHT) is carried out to increase the fracture toughness in heat affected zone(HAZ) and remove the residual stress. There occur some problems such as toughness decreement and stress relief cracking(SRC) in the coarse grained HAZ subjected to the effect of tempering treatment. Especially, embitterment of structure directly relates to the mode of fracture and is appeared as the difference of fracture surface, that is, grain boundary failure. Therefore, in this paper, PWHT was carried out under the stress of 0, 10, 20 and $30kg/cm^2$ to simulate residual stress in HAZ welded by heat input of 10, 30 and 40KJ/cm. Applied stress in weld HAZ during PWHT assisted precipitin of over saturated alloying element in the structure, and grain boundary failure according to welding heat input didn't almost appear at the heat input of 10 KJ/cm, but it appeared from being the applied stress of $30kg/cm^2$ at $30KJ/cm and 20kg/mm^2$ at 40KJ/cm.

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Microstructure Evolution in Sintered CoO under Electric Fields (CoO 소결체의 전기장에 의한 미세구조 변화)

  • 이기춘;유한일
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.912-918
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    • 1992
  • Microstructure evolution including morphological change in the vicinity of the electrodes, porosity change and grain boundary migration was observed in polycrystalline CoO subject to electric fields at 1100 and 121$0^{\circ}C$ in air. At the cathode, the transported cations react with oxygen in the surrounding to form new lattices, while, at the anode, the reverse reaction occurs leading to lattice annihilation. Lattice formation also takes place at the surface of pores near the cathode inducing pore-filling effect. Grain boundary migration was found bo be enhanced or retarded depending on the field direction. It is therefore implied that the driving force of grain boundary migration is the vectorial sum of the curvature-induced chemical potential gradient and the electric field applied.

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The Effect of Sb2O3 Additive on the Electrical Properties of ZnO Varistor (Sb2O3 첨가제가 ZnO 배리스터의 전기적 특성에 미치는 영향)

  • Kim, Yong-Hyuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1697-1701
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    • 2016
  • The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

Thermo-mechanical damage of tungsten surfaces exposed to rapid transient plasma heat loads

  • Crosby, Tamer;Ghoniem, Nasr M.
    • Interaction and multiscale mechanics
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    • v.4 no.3
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    • pp.207-217
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    • 2011
  • International efforts have focused recently on the development of tungsten surfaces that can intercept energetic ionized and neutral atoms, and heat fluxes in the divertor region of magnetic fusion confinement devices. The combination of transient heating and local swelling due to implanted helium and hydrogen atoms has been experimentally shown to lead to severe surface and sub-surface damage. We present here a computational model to determine the relationship between the thermo-mechanical loading conditions, and the onset of damage and failure of tungsten surfaces. The model is based on thermo-elasticity, coupled with a grain boundary damage mode that includes contact cohesive elements for grain boundary sliding and fracture. This mechanics model is also coupled with a transient heat conduction model for temperature distributions following rapid thermal pulses. Results of the computational model are compared to experiments on tungsten bombarded with energetic helium and deuterium particle fluxes.

Prediction of Creep Rupture Time and Strain of Steam Pipe Accounting for Material Damage and Grain Boundary Sliding (재료손상과 입계 미끄럼을 고려한 증기배관의 크리프 파단수명 및 변형률 예측)

  • 홍성호
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.5
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    • pp.1182-1189
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    • 1995
  • Several methods have been developed to predict the creep rupture time of the steam pipes in thermal power plant. However, existing creep life prediction methods give very conservative value at operating stress of power plant and creep rupture strain cannot be well estimated. Therefore, in this study, creep rupture time and strain prediction method accounting for material damage and grain boundary sliding is newly proposed and compared with the existing experimental data. The creep damage evolves by continuous cavity nucleation and constrained cavity growth. The results showed good correlation between the theoretically predicted creep rupture time and the experimental data. And creep rupture strain may be well estimated by using the proposed method.

The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, Sang-Jin;Yang, Joon-Young;Hwang, Kwang-Sik;Yang, Myoung-Su;Kang, In-Byeong
    • Journal of Information Display
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    • v.8 no.4
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    • pp.15-18
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    • 2007
  • In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

Effect of Grain Boundary Modification on the Microstructure and Magnetic Properties of HDDR-treated Nd-Fe-B Powders

  • Liu, Shu;Kang, Nam-Hyun;Yu, Ji-Hun;Kwon, Hae-Woong;Lee, Jung-Goo
    • Journal of Magnetics
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    • v.21 no.1
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    • pp.51-56
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    • 2016
  • The microstructure and magnetic properties of HDDR-treated powders after grain boundary diffusion process (GBDP) with Nd-Cu alloy at different temperatures have been studied. The variation of GBDP temperature had multifaceted influences on the HDDR-treated powders involving the microstructure, phase composition and magnetic performance. An enhanced coercivity of 16.9 kOe was obtained after GBDP at $700^{\circ}C$, due to the modified grain boundary with fine and continuous Nd-rich phase. However, GBDP at lower or higher temperature resulted in poor magnetic properties because of insufficient microstructural modification. Especially, the residual hydrogen induced phenomenon during GBDP strongly depended on the GBDP temperature.

Capacitive-Voltage properties of (Sr.Ca)$TiO_3$ Ceramics ((Sr.Ca)$TiO_3$ 세라믹스의 용량-전압 특성)

  • 강재훈;최운식;김충혁;김진사;박용필;송민종
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.34-37
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    • 2001
  • In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

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The role of grain boundary modifier in $BaTiO_3$ system for PTCR device ($BaTiO_3$계 PTC 재료에서 입계 modifier의 역할)

  • Lee, Jun-Hyeong;Jo, Sang-Hui
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.553-561
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    • 1993
  • In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

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