• Journal of the Korean Society for Heat Treatment
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• v.17 no.1
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• pp.29-35
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• 2004

The effect of low tempering in a temperature range of $150{\sim}400^{\circ}C$ on corrosion resistance in 420J2 stainless steel austenitized at $1000^{\circ}C$ was investigated by the application of salt spray test, electrochemical pitting test in 3.5% NaCl solution and DL-EPR test for intergranular corrosion in 0.5M $H_2SO_4$+0.01M KSCN solution. In salt spray test, good corrosion resistance was obtained in a tempering temperature range of $150{\sim}250^{\circ}C$. Pitting potential was increased to the tempering temperature of $250^{\circ}C$, but decreased with the increase of temperature up to $400^{\circ}C$ And it was thought that the degradation of pitting corrosion resistance showed at the tempering temperature of around $400^{\circ}C$ was due to the precipitation of $Cr_7C_3$ of $M_7C_3$ type. The degree of sensitization showed increasing tendency with the increase of tempering temperature, and also Cr depletion phenomena were observed in the vicinity of grain boundary.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.68-72
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• 2007

Optimum compositions for piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics were investigated in the range of $x=0{\sim}0.1$ covering rhombohedral to tetragonal phase regions. No impurity phases other than a perovskite phase were found and the grain size decreased with increasing x. A two-phase coexisting morphotropic phase area rather than boundary dividing rhombohedral and tetragonal phase regions appeared to exist at $x=0.05{\sim}0.08$. As for piezoelectric properties within morphotropic phase compositions, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($K_p$) showed peak values at x=0.065, 192 pC/N and 34%, respectively, indicating x=0.065 as an optimum composition for piezoelectric $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics.

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.62-66
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• 1998

We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.852-856
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• 2015

In this study, we investigate the effect of high-energy ball milling on thermoelectric transport properties in double-filled $CoSb_3$ skutterudite ($In_{0.2}Yb_{0.1}Co_4Sb_{12}$). $In_{0.2}Yb_{0.1}Co_4Sb_{12}$ powders are milled using high-energy ball milling for different periods of time (0, 5, 10, and 20 min), and the milled powders are consolidated into bulk samples by spark plasma sintering. Microstructure analysis shows that the high-energy ball milled bulk samples are composed of nano- and micro-grains. Because the filling fractions are reduced in the bulk samples due to the kinetic energy of the high-energy ball milling, the carrier concentration of the bulk samples decreases with the ball milling time. Furthermore, the mobility of the bulk samples also decreases with the ball milling time due to enhanced grain boundary scattering of electrons. Reduction of electrical conductivity by ball milling has a decisive effect on thermoelectric transport in the bulk samples, power factor decreases with the ball milling time.

• Journal of Korea Foundry Society
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• v.31 no.5
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• pp.293-301
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• 2011

Representative magnesium alloys applied to the die-casting are AZ91, AM60, etc., and the application of these alloys is restricted to components operating at moderate temperatures, due to grain boundary siding of ${\beta}$-phase($Mg_{17}Al_{12}$) at temperatures above $120^{\circ}C$. Heat-resistant magnesium alloys such as AE42, AE44 have been developed, but that have been too burdensome to produce because of the expensive rare earth materials. Research work for the development of low-priced heat-resistant magnesium alloy is actively in progress and positive results are being reported. This study aims to investigate the effect of Ca additions on mechanical properties of Mg-4Al-2Sn heat resistant magnesium alloys. Mg-4Al-2Sn alloys with Ca (0wt.%, 0.3wt.%, 0.7wt.%, 1wt.%) have been produced through the die-casting process for the development of low-priced heat-resistant magnesium alloy, and high temperature tensile tests are performed using the specimens. The results showed that mechanical properties of Mg-4Al-2Sn-xCa increased with the addition of Ca up to 0.7wt.% Ca and further addition of Ca deteriorated the mechanical properties of the alloys. A significant amount of porosity was observed at the sample with 1wt%. Ca and the longer freezing range of the alloy was believed to cause the formation of porosity.

• Journal of Ocean Engineering and Technology
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• v.10 no.2
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• pp.77-87
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• 1996

The estimation of the remaining life for the aged components in power plant as well as chemical and peroleum plants has been recently coberned. The raw materials used in this syudy are the 1Cr-1Mo-0.25V rotor steel which intensified P and S compositions along with the nominal compositions of ASTM A470 standard. Five kinds of specimens with the different degradation levels were prepared by isothermal aging teat treatment at $630^{\circ}C$ The mechanical properties and fatigue strength of virgin and aged 1Cr-1Mo-0.25V rotor steel have been inbestigated through the hardness, tensile, fatigue test, SEM fractograph and EDS analysis at room temperature. Thus, the data of aged specimens were compared with those of virgin specimen to evaluate the aging effects. The main results obtained in this study are as follows; The decrease of the hardness due to degradation was distinguished until 50, 000hrs simulated service time. And is was confirmed that the considerable amount of P, Mn, Cr and S was precipitated at the grain boundary of aged material through the SEM and EDS analysis. The fatigue strength of 25, 000, 50, 000, 75, 000 and 100, 000hrs aged material was decreased 29.5%, 24.4%, 28.6%, 35.7% than that of virgin material at $10^7$ cycles of room temperature. The major cracks of virgin and aged materials initiated at the inclusions including Si, P and Mn compositions which were located at the outer periphery of the specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.766-771
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• 2009

Lead-free $0.94(Na_{0.5}K_{0.5})NbO_3$-0.06Ba$(Ti_{0.9}Sn_{0.1})O_3$ [0.94NKN-0.06BTS] ceramics doped with 1 mol% $MnO_2$ were synthesized by a conventional solid state method. The phase transitional behavior and piezoelectric properties of the ceramics sintered at various temperatures were investigated. The 0.94NKN-0.06BTS ceramics sintered at $1050^{\circ}C$, having morphotropic phase boundary of orthorhombic and tetragonal phases, exhibited a microstructure with abnormal grain growth. A diffused phase transition behavior for all the specimens was verified as high degree of diffuseness (${\gamma}$) values from 1.45 to 1.79. A high piezoelectric constant of $d_{33}=256$ pC/N and a satisfactory electromechanical coupling factor of $k_p=42%$ were obtained for the relatively dense 0.94NKN-0.06BTS ceramics sintered at $1050^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Corrosion Science and Technology
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• v.19 no.3
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• pp.109-114
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• 2020

The photo-reflectance of aluminum and AISI 304 stainless steel during cyclic immersion test in 3 wt% NaCl solution was examined in this study. Overall, corrosion was not recognized by a visual inspection or weight measurement up to 310 h. When evaluated, it was noted that the roughness of the specimens did not change significantly. However, localized corrosion, which is located at the vicinity of intermetallic precipitation of aluminum or at the grain boundary of stainless steel, was confirmed by the use of an optical microscope and scanning electron microscopy after tens of hours of utilizing the corrosion test. In this respect, an increase of the peak intensity for metallic Al after 90 h of test, and for metallic Fe after 153 h was detected from the X-ray photoelectron spectra. In this context, it was shown that from the photo-reflectance spectra, the reflection of the visible light from the tested samples was changed noticeably over the test duration. As a result, the intensity of reflected light was decreased up to 90 h ~ 153 h, and thereafter was shown to increase higher than the initial intensity before the corrosion test.