• Korean Journal of Materials Research
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• v.23 no.6
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• pp.334-338
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• 2013

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of $BaTiO_3$ thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of $BaTiO_3$ thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from $700^{\circ}C$. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/$BaTiO_3$ are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of $BaTiO_3$ thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed $BaTiO_3$ thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.343-346
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• 2003

Photoluminescence(PL), photostimulated luminescence(PSL) and thermoluminescence(TL) in $SrC1_2$:$Eu^{2+}$ , $Na^{+}$ phosphor powder were measured, and the activation energies(trap depth) of traps associated with TL and PSL were investigated. The PL and PSL in the studied sample is due to the $4f^{6}$ 5d\longrightarrow$4f^{7}$transition of $Eu^{ 2+}$. TL glow curve is single peak, and its peak temperature is about 377.2 K. The PL, PSL and TL emission spectra of the phosphors are located in the range of 380∼440 nm, peaking at 408 nm. The activation energy of the PSL trapping center is 0.78 eV and that of the TL trapping center is 0.79 eV. We, thus, suggest that the trapping centers giving rise to the PSL are identical to those giving rise to the TL.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.79-84
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• 2003

$WC-Ti_{1}$ -xA $l_{x}$ N multilayered coatings are performed by their periodically repeated structures of lamellae of WC-Ti/$WC-Ti_{1}$ -xA $l_{x}$ Nmaterials. The $WC-Ti_{1}$ -xA $l_{x}$ N coatings with variable Al content were deposited onto AISI D2 steel by cathodic arc deposition (CAD) method. The electrochemical behavior of multilayered $WC-Ti_{1}$ -xA $l_{x}$ N coatings with different phases (WC- Ti$0.6/Al_{0.4}$ N, $WC-Ti_{0.53}$$Al_{0.47}$N, $WC-Ti_{0.5}$ $Al_{0.5}$ N and $WC-Ti_{ 0.43}$$Al_{0.57}$ N) was investigated in deaerated 3.5% NaCl solution at room temperature. The corrosion behaviors for the multilayered coatings were investigated by electrochemical techniques (potentiodynamic polarization) and surface analyses (X-ray diffraction (XRD), scanning electron microscopy (SEM), and glow discharge optical emission spectroscopy (GDOES)). In the petentiodynamic polarization test, the corrosion current density of $WC-Ti_{0.5}$$Al_{0.5}$N was lower than others.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.

• Journal of Astronomy and Space Sciences
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• v.14 no.1
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• pp.94-108
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• 1997

The temperature of the upper thermosphere is generally varied with the solar activity, and largely with geomagnetic activity in the high latitude. The data analyzed in this study are acquired at two ground stations, Thule Air Base($76,5{deg} N, 68.4{deg} W, A = 86{deg}$) and $S{psi}ndre Str{psi}mfjord (67.0{deg} N, 50.9{deg} W, A = 74{deg}$), Greenland. Both stations are located in the high latitude not only geographically but also geomagnetically. The terrestrial night glow at 6300 ${angs}$ from atomic oxygen has been observed from the two ground-based Fabry-Perot interferometers, during periods of 1986~1991 in Thule Air Base and 1986~1994 in $S{psi}ndre Str{psi}mfjord$. Some features noted in this study are as follows: (1) The correlation between the solar activity and the measured thermospheric temperature is highest in the case of $3{leq}Kp{leq}4$ in Thule, and increases with the geomagnetic activity in $S{psi}ndre Str{psi}mfjord$. (2) The measured temperatures at Thule is generally higher than those at $S{psi}ndre Str{psi}mfjord$, but the latter shows steeper slope with the solar activity. (3) The harmonic analysis shows that the diurnal variation(24hrs) is the main feature of the daily temperature variation with a temperature peak at about 13-14 LT (LT=UT-4). However, the semi-diurnal variation is evident during the period of weak solar activity. (4) Generally the predicted temperatures from both MSIS86 and VSH models are lower than the measured temperature, and this discrepancy grows as the solar activity increases. Therefore, we urge modelers to develope a new thermospheric model utilizing broader sets of measurements, especially for high solar activity.

• Korean Journal of Food Science and Technology
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• v.12 no.1
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• pp.53-58
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• 1980

The effects of water activity, oxygen, light and storage temperature on the color degradation of dried red pepper were investigated during storage. Some packing materials were used for improving the storage life of red pepper by minimizing those factors. The results obtained were summarized as follows: 1. The critical water activity to the capsanthin of red pepper was 0.75. 2. Color degradation of dried red pepper was the most severe by U.V. light among 100 watt infra-red lamp, 15 watt U.V. lamp and 200 watt glow lamp. 3. Effect of light was not significant in the presence of nitrogen, Main factor of color degradation of red pepper in storage appeared spontaneous oxidation by the existence of oxygen. 4. The capsanthin content and the lightness as hunter value in powder type storage of red pepper was higher than that in whole pod type during 3 month's storage. 5. The air and damp-proof packing materials showed better results than polyethylene film packing in capsanthin content and lightness during 3 month's storage.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.59-66
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• 1992

To develop the highly sensitive TLD radiation sensors, $BaSO_{4}$ : Eu-PTFE TLDs are fabricated by polymerizing the PTFE(polytetrafluoroethylene) with $BaSO_{4}$ : Eu TL phosphors. The $BaSO_{4}$ : Eu TL phosphors having the highest sensitivity of $X/{\gamma}$-rays are obtained by sintering at $1000^{\circ}C$ in $N_{2}$ atmosphere a mixture of $BaSO_{4}$ powder with 1mol% Eu($Eu_{2}O_{3}$), 6mol% $NH_{4}Cl$ and 5mol% $(NH_{4})_{2}SO_{4}$ which were co-precipitated in dilute sulfuric acid and then dried. The activation energy, frequency factor and kinetic order of $BaSO_{4}$ : Eu TL phosphor are 1.17eV, $3.6{\times}10^{11}/sec$ and 1.25, respectively. And the spectral peak of $BaSO_{4}$ : Eu is about 425nm. The optimum TL Phosphor content and thickness of the $BaSO_{4}$ : Eu-PTFE TLD are 40wt% and $105.7mg/cm^{2}$. The optimum polymerization temperature and time for fabrication of $BaSO_{4}$ : Eu-PTFE TLDs are $380^{\circ}C$ and 2 hours in air, respectively. The linear dose range to ${\gamma}$ rays is 0.01-20Gy and fading rate is about 10%/60hours.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.301-311
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• 2012

Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.