• Title/Summary/Keyword: Glow temperature

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Fabrication of $Li_2B_4O_7$ Series Single-Crystal TLDs and their TL properties ($Li_2B_4O_7$ 계열 단결정 TLD 소자의 제작과 특성)

  • Park, Myeong-Hwan;Park, Kang-Soo
    • Journal of radiological science and technology
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    • v.28 no.1
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    • pp.1-7
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    • 2005
  • High-quality single crystals of pure $Li_2B_4O_7$ as well as $Li_2B_4O_7$ doped with Cu, Mn and Mg impurities (1.0mol%, respectively) have been grown from the melt of $Li_2CO_3+2B_2O_3$ by Czochralski method in platinum crucibles. To study the thermoluminescent properties, $Li_2B_4O_7$ series single crystal TLDs were made by cutting in the size of $4{\times}5{\times}1\;mm^3$. The glow curves show two or three peaks which can be easily deconvoluted. It is observed that room temperature($20{\sim}30^{\circ}C$) fadings of the dosimetric peaks of $Li_2B_4O_7$ series single crystal TLDs were about 10 % for 30 days. The relative photon energy response for $Li_2B_4O_7$ series single crystal TLDs were about 85 % when the responses were normalized to that measured with $^{60}Co\;(1.25\;MeV)\;{\gamma}-rays$. The measured data are in a good agreement with theoretical ones. The $Li_2B_4O_7$ series single crystal TLDs fabricated in this work can be used for monitoring personal and environmental radioactivity.

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Study on Application of the Physical Detection Methods for Electron Beam-Irradiated Agricultural Products (전자선 조사된 농산물의 물리적 검지 방법의 적용에 관한 연구)

  • Kim, Dong Yong;Park, Yong Dae;Jin, Chang Hyun;Choi, Dae Seong;Yook, Hong-Sun;Jeong, Il Yun
    • Journal of Radiation Industry
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    • v.4 no.3
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    • pp.221-226
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    • 2010
  • Physical detection methods, photostimulated luminescence (PSL), thermoluminescence (TL) and electron spin resonance (ESR) were applied to detect electron beam-irradiated agricultural products, such as red pepper, black pepper, raisin, walnut, beef seasoning and pistachio. The absorbed irradiation doses for representative samples were controled at 0, 1, 3, 5 and 10 kGy. PSL values for non-irradiated samples were <700 counts/60s (lower threshold, $T_1$) except beef seasoning, whereas those of irradiated samples were more than 5,000 photon counts, upper threshold ($T_2$) in black pepper, raisin, and beef seasoning and intermediates values of $T_1-T_2$ in red pepper, walnut, and pistachio. Minerals seperated from the samples for TL measurement showed that non-irradiated samples except pistachio (TL ratio, 0.12) were characterized by no glow curves situated at temperature range of $50{\sim}400^{\circ}C$ with TL ratio (0.01~0.08), while irradiated samples except pistachio at only 1 kGy (TL ratio, 0.08) indicated glow curve at about $150{\sim}250^{\circ}C$ with TL ratio (0.28~3.10). ESR measurements of irradiated samples showed any specific signals to irradiation. The samples of both red pepper and pistachio were produced specific signals derived from cellulose radicals as well as single line signals for black pepper and walnut, and multiple signals derived from crystalline sugar radicals for raisin and beef seasoning. In conclusion, The ESR methods can apply for detection of pistachio exposed to electron beam but PSL and TL are not suitable methods. Furthermore, TL and ESR suggeted that both techniques were more useful detection method than PSL to confirm whether red pepper, walnut and beef seasoning samples have been exposed to electron beam.

Development of low cost and high efficiency silicon thin-film and a-Si:H/c-Si hetero-junction solar cells using low temperature silicon thin-films (고품질 실리콘 박막을 이용한 저가 고효율 실리콘 박막 및 a-Si:H/c-Si 이종접합 태양전지 개발)

  • Lee, Jeong-Chul;Lim, Chung-Hyun;Ahn, Sae-Jin;Yun, Jae-Ho;Kim, Seok-Ki;Kim, Dong-Seop;Yang, Sumi;Kang, Hee-Bok;Lee, Bo-young;Yi, Junsij;Son, Jinsoo;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.113-116
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    • 2005
  • In this paper, silicon thin-film solar cells(Si- TFSC) and a-Si/c-Si heterojunction solar cells(HJ-cell) are investigated. The Si-TFSC was prepared on glass substrate by depositing $1-3{\mu}m$ thin-film silicons by glow discharge method. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells on textured ZnO:A1 TCO (transparent conducting oxide) showed improved Jsc in top and bottom cells than that on $SnO_2:F$ TCO. This enhancement of jsc resulted from improved light trapping effect by front textured ZnO:A1. The a-Si/c-Si HJ-cells with simple structure without high efficiency features are suffering from low Voc and Jsc. The improvement of front nip and back interface properties by adopting high quality silicon-films at low temperature should be done both for increasing device performances and production cost.

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Observation of Plasma Shape by Continuous dc and Pulsed dc (직류 방전과 펄스 직류 방전에 의한 플라즈마 형상 관찰)

  • Yang, Won-Kyun;Joo, Jung-Hoon
    • Journal of Surface Science and Engineering
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    • v.42 no.3
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    • pp.133-138
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    • 2009
  • Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.

Relationship Between Annealing Temperature and Structural Properties of BaTiO3 Thin Films Grown on p-Si Substrates (p-Si 기판에 성장한 BaTiO3 박막의 어닐링온도와 구조적 특성과의 관계)

  • Min, Ki-Deuk;Kim, Dong-Jin;Lee, Jong-Won;Park, In-Yong;Kim, Kyu-Jin
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.222-227
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    • 2008
  • In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

A Study on Wear and Corrosion Properties of Plasma Carburized Austenitic Stainless Steel (플라즈마 침탄된 오스테나이트계 스데인리스강의 마모 및 부식 특성에 관한 연구)

  • Shin, Dong-Myung;Lee, Chang-Youl;Lee. Kyung-Sub
    • Korean Journal of Materials Research
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    • v.12 no.10
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    • pp.776-783
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    • 2002
  • Austenitic stainless steel (STS304) has been carburized using glow discharge plasma and its microstructure, wear resistance and corrosion property have been investigated. A repeat boost-diffuse carburizing was used as an effective plasma carburizing method. The effective case depth of the plasma carburized specimens was increased with the carbon concentration at the surface area. The specimens prepared by 3 hours plasma carburizing under $600^{\circ}C$ did not have the standard hardness for the effective case depth, but the specimen prepared by 11 hours plasma carburizing at $500^{\circ}C$ had nearly the same hardness with the specimen plasma carburized for 3 hours at $800^{\circ}C$. The wear resistance increased with temperature but the corrosion properties of the specimens prepared over $600^{\circ}C$ decreased rapidly due to the grain boundary sensitization. However, the specimen plasma carburized for 11 hours at $500^{\circ}C$ had nearly the same wear resistance with the specimen plasma carburized for 3 hours at $800^{\circ}C$ without deterioration of corrosion property. This could be resulted from the fact that the microstructure of the specimen plasma carburized for 11 hours at $500^{\circ}C$ was composed of martensite and austenite, because a partial martensite transformation was occurred only in the specimen plasma carburized for 11 hours at 50$0^{\circ}C$.

Properties of Pulsed Photostimulated Luminescence and Thermoluminescence for Detection of Gamma-Irradiated Teas during Storage

  • Kausar, Tusneem;Kim, Byeong-Keun;Yang, Jae-Seung;Byun, Myung-Woo;Kwon, Joong-Ho
    • Preventive Nutrition and Food Science
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    • v.9 no.3
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    • pp.227-231
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    • 2004
  • Green, black and oolong teas were irradiated by $^{60}$ Co-gamma rays (0~10 kGy) and were investigated for detection of irradiation treatment using pulsed photostimulated luminescence (PPSL) and thermoluminescence (TL) during storage. Teas irradiated at 2.5 kGy or more showed a photon count of greater than 5000 counts/60 sec while the non-irradiated yielded only 650~1000 count/60 sec. Correlation coefficients between irradiation dose and photon counts/60 sec were 0.8951, 0.7934 and 0.9007 for green, black and oolong teas, respectively. The TL glow curves for minerals isolated from the non-irradiated teas were situated at about 30$0^{\circ}C$ with a low intensity, but for irradiated samples were approximately 15$0^{\circ}C$ with a high intensity. The TL ratios (TL$_1$/TL$_2$), calculated from values after initial radiation and then after re-irradiation of the teas, were below 0.1 for the non-irradiated samples and higher than 1.44 for all irradiated samples, enhanced the reliability of the identification results for TL. The signal intensity of PPSL and TL for irradiated teas decreased with the lapse of post-irradiation storage time at room temperature but was still distinguishable from that of the non-irradiated samples even after one year.

Fabrication and Characteristics of Photoconductive Amorphous Silicon Film for Facsimile (팩시밀리용 비정질 실리콘 광도전막의 제작 및 특성)

  • Kim, Jeong-Seob;Oh, Sang-Kwang;Kim, Ki-Wan;Lee, Wu-Il
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.48-56
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    • 1989
  • Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

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Exhaust Emissions Reduction using Unburned Exhaust Gas Ignition Technology and Hydrocarbon Adsorber (미연 배기가스 점화 기술과 탄화수소 흡착기를 이용한 배기저감)

  • Kim, C.S.;Chun, J.Y.;Choi, J.W.;Kim, D.S.;Lee, Y.S.;Kim, I.T.;Ohm, I.Y.;Cho, Y.S.
    • Proceedings of the KSME Conference
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    • 2000.11b
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    • pp.150-155
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    • 2000
  • Exhaust emissions from vehicles are the main source of air pollution. Many researchers are trying to find the way of reducing vehicle emissions, especially in the cold transient period of the FTP-75 test. In this study, UEGI (Unburned Exhaust Gas Ignition) technology, warming up the close-coupled catalytic converter (CCC) by igniting the unburned exhaust mixture using two glow plugs installed in the upstream of the catalyst, was developed. It was applied to an exhaust system with a hydrocarbon adsorber to ensure an effective reduction of HC emission during the cold start period. Results showed that the CCC reaches the light-off temperature (LOT) in a shorter time compared with the baseline exhaust system, and HC and CO emissions are reduced significantly during the cold start.

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Persistent Photoconductivity in Hydrogenated Amorphous Carbon Thin Films (수소화된 비정질 탄소 박막에서의 지속광전기전도도)

  • Kang, Sung Soo;Lee, Won Jin;Sung, Duck Yong
    • Journal of Korean Ophthalmic Optics Society
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    • v.1 no.2
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    • pp.49-55
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    • 1996
  • Hydrogenated amorphous carbon(a-C:H) films were fabricated by the low-frequency (60Hz) glow discharge of the mixture of methane and hydrogen, and their electrical properties were investigated. We observed that a-C:H films show the persistent photoconductivity(PPC) by illumination of heat-filtered while light for a few seconds. The PPC was about 10 times larger than the annealed dark conductivity. The samples clearly showed metastable characteristics. With increasing illumination times from 1 to 100 min, the annealing activation energy of the PPC was about 0.39eV. The annealing temperature at which the PPC disappeared increasing from $100^{\circ}C$ to $130^{\circ}C$. Illumination longer than 80 min leads to the formation of ${\pi}$ defects and to the decrease of PPC. From these results, we tentatively propose that the states in the ${\pi}$ band act as deep trap centers generating the metastabilities.

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