• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.1-7
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• 2018

As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.

• Journal of Information Processing Systems
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• 제18권1호
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• pp.159-172
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• 2022

The role of the interconnect network, which connects computing nodes to each other, is important in high-performance computing (HPC) systems. In recent years, the peripheral component interconnect express (PCIe) has become a promising interface as an interconnection network for high-performance and cost-effective HPC systems having the features of non-transparent bridge (NTB) technologies. OpenSHMEM is a programming model for distributed shared memory that supports a partitioned global address space (PGAS). Currently, little work has been done to develop the OpenSHMEM library for PCIe-interconnected HPC systems. This paper introduces a prototype implementation of the OpenSHMEM library through a switchless interconnect network using PCIe NTB to provide a PGAS programming model. In particular, multi-interrupt, multi-thread-based data transfer over the OpenSHMEM shared memory model is applied at the implementation level to reduce the latency and increase the throughput of the switchless ring network system. The implemented OpenSHMEM programming model over the PCIe NTB switchless interconnection network provides a feasible, cost-effective HPC system with a PGAS programming model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권2호
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• pp.168-174
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• 2012

This paper describes a novel global on-chip interconnect scheme, in which a one UI-delayed symbol as well as the current symbol is sent for easing the sensing operation at receiver end. With this approach, the voltage swing on the channel for reliable sensing can be reduced, resulting in performance improvement in terms of power consumption, peak current, and delay spread due to PVT variations, as compared to the conventional repeater insertion schemes. Evaluation for on-chip interconnects having various lengths in a 130 nm CMOS process indicated that the proposed on-chip interconnect scheme achieved a power reduction of up to 71.3%. The peak current during data transmission and the delay spread due to PVT variations were also reduced by as much as 52.1% and 65.3%, respectively.

• 한국정밀공학회지
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• 제13권11호
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• pp.46-56
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• 1996

Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.19-27
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• 2002

실리콘 기판가 교차하는 금속 선의 밑층 기하구조를 고려한 연결선로의 특성이 정교하게 고안된 패턴을 가지고 실험적으로 분석되었다. 이 작업에서, 여러 종류의 밑층 기하구조에 따른 전송선로을 위한 테스트 패턴들을 고안하였고, 신호 특성과 반응은 S-parameter 와 TDR을 통해 측정되었다. 사용된 패턴은 두 개의 알루미늄 선과 한 개의 텅스텐 선을 가지는 deep-submicron CMOS DRAM 기술을 가지고 설계되고 제작되었다. 패턴위에서 측정되 결과 분석으로부터, 라인 파라메터들 (특히 라인 커패시턴스와 저항) 과 그것들에 의한 신호 왜곡에 대한 밑층 구조에 의한 효과는 무시 할수 없음을 발견하였다. 그러한 결과는 고속 클럭과 데이터 라인 같은 글로벌 신호 선이나 패키지 리드의 스큐 발렌스의 심도있고 유용한 이해에 도움이 된다.

• International Journal of Advanced Culture Technology
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• 제8권3호
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• pp.90-100
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• 2020

Our overall society circulates in line with the economical situations characterized by production and consumption and companies play the role of providing products and services, thus taking very significant responsibilities for the socioeconomical and cultural aspects in society. Therefore, when designers attempt to think of a way to enable companies and society to share their values and propose specific concepts and visualize outcomes, it is very critical to be able to understand economical philosophy and management strategies that interconnect companies with society and seek out proper design approaches. Recently, the world's enterprise and management culture tend to connect products and services provided by companies through chains of social values. Based on the abovementioned shift in the management paradigm, the researcher investigates and analyzes actual cases of attempts by Samsung Electronics to achieve its social impacts and studies actual roles and approaches of in-house designers with creativity and insights of humanity with regard to these attempts. Each case is selected from various fields such as the company's products and service development, business systems, culture, and external strategies and the ultimate goal is to learn about actual insights and approaches of designers to make contributions to the company's management with social impacts. Especially, humanity and creative thinking of many designers working in the manufacturing industry can have significant contributions to achieving its management with social impacts and effects of sustainable management.

• 전자공학회논문지D
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• 제34D권12호
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• pp.76-82
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• 1997

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily ahieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etch-back process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurment of planarity. mOreover, it will contribute to analyze planarization characteristics and establish CMP model.

• ETRI Journal
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• 제33권5호
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• pp.822-825
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• 2011

Level-encoded dual-rail (LEDR) has been widely used in onchip asynchronous interconnects supporting a 2-phase handshake protocol. However, it inevitably requires 2N wires for N-bit data transfers. Encoder and decoder circuits that perform an asynchronous 2-phase handshake protocol with only N wires for N-bit data transfers are presented for on-chip global interconnects. Their fundamentals are based on a ternary encoding scheme using current-mode multiple valued logics. Using 0.25 ${\mu}m$ CMOS technologies, the maximum reduction ratio of the proposed circuits, compared with LEDR in terms of power-delay product, was measured as 39.5% at a wire length of 10 mm and data rate of 100 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.140-143
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• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.