• 한국세라믹학회지
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• 제46권1호
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• pp.30-34
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• 2009

A Sand blasting technology has been used to address via and trench processing of glass wafer of optic semiconductor packaging. Manufactured sand blast that is controlled by blast nozzle and servomotor so that 8" wafer processing may be available. 10mm sq test device manufactured by Dry Film Resist (DFR) pattern process on 8" glass wafer of $500{\mu}m's$ thickness. Based on particle pressure and the wafer transfer speed, etch rate, mask erosion, and vertical trench slope have been analyzed. Perfect 500 um tooling has been performed at 0.3 MPa pressure and 100 rpm wafer speed. It is particle pressure that influence in processing depth and the transfer speed did not influence.

• 한국정보통신학회논문지
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• 제16권5호
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• pp.1029-1034
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• 2012

본 논문에서는 US-PCS(US-personal communications services)를 위해 사용이 가능한 저가격 고성능 FBAR (film bulk acoustic resonator) 듀플렉서(duplexer) 모듈(module)을 제시하였다. FBAR 소자는 일반적인 실리콘(Si) 기반의 공정보다 가격경쟁력이 우수한 유리(glass) 웨이퍼 기반의 패키지를 개발하여 적용하였다. FBAR 듀플렉서 모듈의 전송단(Tx)과 수신단(Rx)에서 얻어진 최대 삽입손실 특성은 각각 1.9 dB와 2.4 dB이다. 전송단 및 수신단 FBAR 소자와 본딩(bonding)된 유리 기반의 웨이퍼 및 PCB 기판과 몰딩(molding) 물질을 모두 포함하는 FBAR 듀플렉서 모듈의 전체 두께는 1.2 mm이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• 한국생산제조학회지
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• 제22권6호
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• pp.996-1002
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• 2013

This study addresses the development of a full duplex robotic system for transferring flat-panel display glass. We propose to accomplish this using a bidirectional linear transfer mechanism in place of the conventional rotary transfer mechanism. The developed full duplex robot comprises a driving part that carries the glass panel laterally, vertical part that can be moved up and down by means of a ball screw and linear motion guide arrangement, and hand part that slides by the cylinder of the driving part along the guide rail with a V-guide bearing attached to the bottom of the support. In addition, an alignment part prevents the hand part from derailing and holds the hand part while the driving part moves horizontally. The full duplex robot lifts and drives a glass panel directly while transferring it to the buffer and does not require rotational motion. Therefore, both transferring and stacking are realized with a single device. This device can be used in existing industrial facilities as an alternative to existing industrial robots in current as well as future process lines. The proposed full duplex robot is expected to save considerable amounts of time and space, and increase product throughput.

• 대한기계학회논문집B
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• 제30권2호
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• pp.153-160
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• 2006

A technique for measuring surface temperature field in micro scale is newly proposed, which uses temperature-sensitive fluorescent (TSF) dye coated on the surface and is easily implemented with a fluorescence microscope and a CCD camera. The TSF dye is chosen among mixtures of various chemical compositions including rhodamine B as the fluorescent dye to be most sensitive to temperature change. In order to examine the effectiveness of this temperature measurement technique, numerical analysis and experiment on transient conduction heat transfer for two different substrate materials, i. e., silicon and glass, are performed. In the experiment, to accurately measure the temperature with high resolution temperature calibration curves were obtained with very fine spatial units. The experimental results agree qualitatively well with the numerical data in the silicon and glass substrate cases so that the present temperature measurement method proves to be quite reliable. In addition, it is noteworthy that the glass substrate is more appropriate to be used as thermally-insulating locally-heating heater in micro thermal devices. This fact is identified in the temperature measuring experiment on the locally-heating heaters made on the wafer of silicon and glass substrates. Accordingly, this technique is capable of accurate and non-intrusive high-resolution measurement of temperature field in microscale.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.343-343
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• 2006

Surface-initiated atom transfer radical polymerization of 2-methacryloyloxyethyl phosphorylcholine (MPC) was carried out to produce high-density poly(MPC) brush on silicon wafer. Frictional properties of poly(MPC) was investigated by by sliding a glass ball (${\phi}\;10\;nm$) on the substrates over a distance of 20 mm at a sliding velocity of 90 mm/min under loading of 0.49 N at 298 K. Higher friction coefficients were observed in dry N2 atmosphere and in toluene condition, whereas the friction coefficients decreased to 0.02 in humid air and in water. It is supposed that water-swollen poly(MPC) brush works as a lubricant to moderate the interaction between brush and probe.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권7호
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• pp.351-363
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• 2001

This paper presents an experimental investigation on the heat trensfer characteristic of micro pipe (MHP) array with 38 triangular microgrooves. A heat pipe is an effective heat exchanger operating without external power. The heat pipe transfers heat by means of the latent heat of vaporization and two-phase fluid flow driven by the capillary force. The overall size of the MHP array can be put undermeath a microelectonic die and integrated into the electrronic package of a microelectronin device to dissipate the heat from the die. The MHP array is fabricated by micromachining with a silicon wafer and a glass substrate. The MHP was filled with water and sealed. The experimental results show the temperature decrease of 12.1$^{\circ}C$ at the evaporator section for the input power of 5.9 W and the improvement of 28% in the heat transfer rate.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 전자공학회논문지A
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• 제31A권8호
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).