• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.4
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• pp.371-377
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• 2008

Our precedent study has reported glass-PDMS (polydimethylsiloxane) based biochip for the gene PCR (polymerase chain reaction). To prevent the contamination of bio sample, the once used biochip must not be used repeatedly. However, the fabrication cost of microheater and microsensor of the biochip was not cheap to use it as a disposable chip. This paper proposes new PCR-chip where the glass substrate integrated with the microheater and microsensor is detachable from the reaction chamber where the sample is injected. That makes it possible to reuse the glass substrate repeatedly. The performance of the proposed detachable PCR-chip was compared with that of the precedent monolithic PCR-chip. The results showed that the SRY (sex determining Y chromosome) gene PCR was successfully performed in the detachable chip compared with the monolithic chip. However, the more efforts to improve the efficiency of surface treatment of PDMS chip are needed to increase the possibility of applying the detachable chip to the detecting of male infertility.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.547-552
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• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.526-529
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• 2002

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.75-80
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• 2005

In this thesis, We Fabricated Cu thin films of 1000 $\AA$, 3000 $\AA$, and 6000 $\AA$ thickness on the single crystal sapphire, polycrystal alumina, and amorphous slide glass substrates deposited by electron beam evaporation(EBE) method. We investigated properties of resistivity and adhesion of these Cu thin films under various conditions, substrate temperature(room temperature, 10$0^{\circ}C$, 20$0^{\circ}C$ under vacuum) and annealing temperatures(400 $^{\circ}C$, 600 $^{\circ}C$ for 30 min after the deposition). We found that these adhesion was increased in order of slide glass, sapphire, and alumina. The adhesion of the Cu thin films on alumina was high value about 4 times, compared with that of the Cu thin films on slide glass. We found that these resistivities were decreased with increasing substrate temperature and thin film thickness. The resistivity(2.05 $\mu$Ω\ulcornercm) of the Cu thin films with 6000 $\AA$ thickness at 200 $^{\circ}C$ on the slide glass was low value, compared with that of aluminum(2.66 $\mu$Ω\ulcornercm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.434-439
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• 2008

Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.68-73
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• 1996

ZnO thin films were prepared on glass and (012) sapphire substrates by rf magnetron sputtering. Polycrysralline ZnO films with a (002) orientation were obtained on glass substrates. (110) ZnO films were epitaxially grown on the (012) sapphire substrates. Surface acoustic wave properties were also measured for propagating along the c axis of ZnO film on the glass and sapphire substrates. The phase velocities ($V_{p}$) on glass and sapphire substrate at center frequency were 2680 m/sec and 5980 m/sec and the effective coupling coefficient ($k^{2}$) on the 0th mode were 0.98 % and 1.43 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.338-338
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• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• Journal of Surface Science and Engineering
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• v.43 no.6
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.