• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.429-429
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• 2016

Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 대한방사선기술학회지:방사선기술과학
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• 제37권1호
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• pp.1-6
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• 2014

유방촬영용 방사선발생장치의 성능 관리 및 품질관리에 적용되는 관전압과 관전류량을 IEC(International Electrotechnical Commission; 국제 전기 기술위원회) 60601-2-45에서 제시한 표준을 근거로 시험하고 분석한 결과 다음과 같은 결론을 얻었다. 관전압에 따른 제조년도별 표준편차 값은 2001~2010 사이에서 3.15로 가장 크게 나타났고, 관전류량에 따른 제조년도별 표준편차 값은 2000년 이전에서 6.38로 가장 크게 나타났으며, 2011년 이후에 제조된 장치에서는 PAE(Percent Average Error; 백분률표준오차)의 표준편차가 비교적 적게 나타났다. 이는 최근에 제조된 유방촬영용 방사선발생장치의 관전압과 관전류량이 정확한 성능을 유지하고 있음을 알 수 있다. 본 연구결과를 기초자료로 활용하여 유방촬영용 방사선발생장치의 성능 및 품질 관리를 유지하므로 현재 식품의약품안전청의 "진단용 방사선발생장치의 안전관리에 관한 규칙"에서 규정하고 있는 3년 검사주기 동안에 자가 점검으로 방사선발생장치의 방사선에 대한 안전성 확보와 사용하는 X선 장치의 성능을 일관성(constancy) 있게 유지하도록 함으로서 궁극적으로 방사선에 대한 국민피폭선량을 줄일 수 있는 기대효과가 있을 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 한국가스학회지
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• 제15권5호
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• pp.25-30
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• 2011

바이오가스는 Biomass, 유기성 폐기물 등의 혐기소화 공정을 통해 얻을 수 있는 대표적인 신재생연료로 저발열량에도 불구하고 탄소중립적인 특성이 있기 때문에 이를 엔진에 적용하여 에너지를 생산하고자 하는 노력이 계속되어왔다. 바이오가스는 원료의 종류 및 혐기소화 공정 조건에 따라 그 연료 조성이 달라질 수 있는데, 이러한 조성 변화는 엔진 성능에 큰 영향을 미칠 수 있기 때문에 이에 대한 연구가 필요한 실정이다. 따라서 이번 연구에서는 다양한 발열량을 갖는 바이오가스를 연료 내 불활성가스 비율을 변화시켜 모사하고 이를 이용하여 바이오가스 내 불활성가스 비율의 변화, 즉 발열량의 변화가 엔진 성능 및 배기 특성에 주는 영향을 파악하였다. 실험결과로 각 불활성가스 함량에 따른 최적 점화시기를 결정하였으며, 발열량 변화가 엔진 출력, 효율, 배기 성능에 미치는 영향을 제시하였다.

• 한국버섯학회지
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• 제5권1호
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• pp.34-38
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• 2007

원형느타리 재배농가에서 발생한 백색과 흑회색 변이체는 원형느타리1호에 비해 균사생장속도가 느리고 균총의 모양도 불규칙하였다. 색소변이체로부터 분리한 단포자의 유전표지인자를 분석한 결과 원형느타리1호의 단포자와 유사한 결과를 보여 색소변이체는 원형느타리1호의 변이체임이 확인되었다. 백색변이체균주를 Mn이 첨가된 배지에서 배양한 결과 배지색소가 형성되었다. 색소변이체로부터 단포자를 분리하여 F1을 육성하여 자실체색의 후대유전양상을 분석한 결과, 백색변이체의 F1은 모두 백색이었으며, 흑회색 변이체의 F1은 대부분 모균주와 같은 흑회색의 자실색을 형성하는 것으로 보아 색소변이는 후대(F1)로 유전되는 것으로 추정할 수 있다. 자실체색은 유색계통이 백색에 대해 우성인 것으로 보고되어 있으며, 백색변이체와 회색의 야생종과의 교배에 의해서도 동일한 결과를 얻을 수 있었다. 자실체색은 버섯의 상품성을 좌우하는 중요한 형질 중 하나이며, 또한 버섯균의 유기물 분해력과 병이나 불량환경에 대한 저항성에 관련된 것으로 알려져 있다. 따라서 자실체색이 진한 품종을 육성하는 연구는 버섯연구에 있어서 중요한 과제 중 하나이다. 자실체색 돌연변이체는 이러한 육종연구에 중요한 자료가 될 수 있을 것이다.

• 한국전통조경학회지
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• 제32권2호
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• pp.148-158
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• 2014

본 연구의 목적은 문헌고찰을 통해 중국 청나라 소설 "홍루몽"에 등장하는 가상 정원인 소상관의 의경을 분석하는 것이다. 결론을 요약하면 다음과 같다. 첫째, "홍루몽"에 묘사된 가상 정원은 실제로 재현이 가능한 것을 확인할 수 있다. 둘째, 소상관의 의경 분석을 통해 "홍루몽"은 정원 식물들의 의미를 많이 활용하여 의경을 연출한다는 것을 이해할 수 있다. 셋째, 소상관의 주요 조성 이념은 사법자연(師法自然)이며, 대표적인 공간 구성 원리는 곡경통유(曲徑通幽)와 차경이라고 할 수 있다. 넷째, "홍루몽"과 "원야"에 나타난 전통정원의 조성 이념이 기본적으로 일치하는 것을 발견할 수 있다. 본 연구는 중국 청나라 소설 "홍루몽"에 나오는 소상관의 의경 분석을 통해 정원 의경 분석의 틀을 제시하였고 향후 정원 의경을 분석하는 데 유용한 정보를 마련하였다. 연구 결과를 통해 "홍루몽"은 중국전통정원 연구에 매우 유효한 자료임이 확인되었다.

• 한국산림과학회지
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• 제101권2호
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• pp.291-296
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• 2012

세대기간이 긴 임목에 있어 3배체는 바이오매스 생산과 분자생물학적 연구 분야에서 매우 유용한 연구재료이다. 1970년대 육성된 현사시나무 4배체와 일반 2배체 간의 인공교배를 통해 3배체가 육성되었다. 유세포 분석법을 이용해 이들 $F_1$의 배수성을 확인한 결과 14개체 중 10개체가 3배체로 선발되었다. 그 가운데 3계통의 3배체(Line-1, Line-17, Line-18)는 기내배양시 2배체에 비해 잎이 크고, 엽형이 다소 변형된 형태적 특징이 있었다. 특히 'Line-18'은 줄기가 2배체에 비해 굵었으며, 뿌리 생육에 있어서 발근이 더뎠고 뿌리수도 다른 3배체나 2배체에 비해 적은 특징을 보였다. 그러나 순화율은 모두 100%에 달하였다. 본 연구결과는 3배체 현사시나무가 바이오매스 생산 및 형질전환 연구를 위한 좋은 재료가 될 수 있음을 보여주는 결과이며, 또한 유세포 분석법이 배수체 육종시 배수체를 확인하는데 효율적인 방법임을 시사한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.