• 정보저장시스템학회논문집
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• 제4권1호
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• pp.1-5
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• 2008

Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.421-421
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• 2009

Since carbon nanotubes (CNTs) are discovered, tremendous attentions have been paid to these materials due to their unique mechanical, electrical and chemical properties. Thereupon, many methods to produce a large scale of CNTs have been contrived by many scientists and engineers. Thus the examination of growth mechanisms of CNTs, which is essential to produce CNTs in large scale, has been an attractive issue. Though many scientists have been strived to investigate and understand the growth mechanisms of CNTs, many of them still remain controversial or unclear. Here we introduce representative growth mechanisms of CNTs, based on broadly employed fabrication methods of CNTs. We applied Thermo-electrical Pulse Induced Evaporation (TPIE) method based on field and thermal evaporation to synthesis of CNTs. However TPIE method was originally devised to fabricate graphene sheets and $Ge_2Sb_2Te_5$ nanostructures. While performing TPIE experiments to synthesize graphene, we eventually found experimental results widely supporting the growth model of CNTs proposed already. We observed the procedure of growth of CNTs obtained by TPIE method through Transmission Electron Microscopy (TEM). We believe this study provides an experimental basis on understanding and investigating carbon-based nanomaterials.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.31-36
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• 2002

낮은 에너지의 보론 이온을 선비정질화된 실리콘 기판과 단결정 기판에 이온 주입하여 0.2μm 정도의 접합 깊이를 갖는 박막의 P/sup +/-n 접합을 형성하였다 이온주입에 의한 결정결함의 제거 및 주입된 보론 이온의 활성화를 위해 급속 열처리기를 이용하였으며, BPSC(bore-phosphosilicate glass)를 흐르도록 하기 위해 노 열처리를 도입하였다. 선비정질화 이온주입은 45keV, 3×10/sup 14/cm/sup -2/ Ge 이온을 사용하였으며, p형 불순물로는 BF2 이온을 20keV, 2×10/sup 15/cm /sup -2/로 이온주입 하였다. 급속 열처리와 노 열처리 조건은 각각 1000。C/ 10초와 850。C/4O분이었다. 형성된 접합의 접합깊이는 SIMS와 ASR로 측정하였으며, 4-point probe로 면 저항을 측정하였다. 또한 전기적인 특성은 다이오드에 역방향 전압을 인가하여 측정된 누설전류로 분석하였다. 측정 결과를 살펴보면, 급속 열처리만을 수행하여도 양호한 접합 특성을 나타내나, 급속 열처리와 노 열처리를 함께 고려해야 할 경우에는 노 열처리 후에 급속 열처리를 수행하는 공정이 급속 열처리 후에 노 열처리를 수행하는 경우보다 더 우수한 박막 접합 특성을 나타내었다.

• 대한자기공명의과학회:학술대회논문집
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• 대한자기공명의과학회 2001년도 제6차 학술대회 초록집
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• pp.172-172
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• 2001

Purpose： To evaluate compensatory change of opposite hippocampus after temporal lobe surgery in th patient with temporal lobe epilepsy by using single-voxel proton MR spectroscopy. Method： Eighteen patients with intractable temporal lobe epilepsy (TLE) whose MR diagnos was unilateral hippocampal sclerosis (n=11) or localized unilateral anterior temporal lobe lesio (n=7) and who underwent anterior temporal lobectomy were included in the study. Singl proton MRS of opposite hippocampus was carried out on the same day or within 1 week af MR imaging before temporal lobe surgery and after over 1-year post-surgical follow-u Single voxel proton MRS were acquired using GE signa 1.5T scanner and spectrosco system (TR, 1500-2, 000： TE, 136-144). Region of interest (ROI) was placed in a simitar position for all examination to cover the medial temporal lobes including most of the head an body of hippocampus and a part of amygdala, the parahippocampal gyrus. The MR spectr were evaluated with a focus on the metabolite ratio of N-acetylaspartate (NAA choline-containing phospholipids (Cho), creatine (Cr). The metabolite ratios of NAA/ Cr were calculated from the relative peak height measurement. We evaluated change of th intensity ratio NAA/Cr between before and after surgery, to simplify quantification acro patients, because observed decreases in the ratio of NAA/Cr can be interpreted in terms o neuronal or axonal damage.

• 대한디지털의료영상학회논문지
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• 제11권2호
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• pp.51-57
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• 2009

The purpose of this study would evaluate if having clinical effects on diffusion image with quantitative analysis through ADC values of brain's normal tissue and lesions before and after contrast injections using a 3.0T. From November in 2007 until December in 2008, a total of 32 patient was performed on 3.0T(Signa Excite, GE Medical System, USA) with the normal or lesions in the patient who requests diffusion weighted image with 8channel head coil. The pulse sequence was used with spin echo EPI(TR: 10000msec, TE: 72.2 msec, Matrix: 128*128, FOV: 240 mm, NEX: 1, diffusion direction: 3, b-value: 1000). Measurement results of ADC values on lesions, CSF, white matter, gray matter, lesions after contrast injection were measured less 75% than before contrast injection, infarction: 100%, CSF: 78%(high), white matter: 71.4%(low), gray matter: 50%(high, low). The results of paired t-test on the deference of ADC values which statically is significant in three(lesions, CSF, white matter)regions except for white matter(p<0.05). Quantitative analysis of lesions, CSF, white matter, gray matter have difference on all regions. ADC values were low in lesions and white matter, normal CSF after contrast injection commonly is high than before contrast injection, ADC values which white matter were high and low (50:50) after contrast injection. 3.0T diffusion weighted image clinically supposed that performing DWI examination after contrast injection was not desirable because of having effects on brain tissue.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.184-184
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• 2011

반도체 전자 소자의 초고집적회로(VLSI, Very Large Scale Integrated Circuit)가 수년간 지속됨에 따라 실리콘 기반으로 하는 MOSFET 성능의 한계에 도달하게 되었다. 재료 물성, 축소, 소자 공정 등에 대한 원인으로 이를 극복하고자 하는 재료와 성능향상에 관한 연구가 진행되고 있다. 이에 기존 시스템의 전자의 전하 정보만을 응용하는 것이 아니라 전자의 스핀 정보까지 고려하는 스핀트로닉스 연구분야가 주목을 받고 있다. Spin-FET는 스핀 주입, 스핀 조절, 스핀측정 등으로 나뉘어 연구되고 있으며 이 중 스핀 주입의 효율 향상이 우선시 해결되어야 한다. 일반적으로 스핀 주입 과정에서 소스가 되는 강자성체와 스핀 확산 거리가 긴 반도체 물질과의 Conductance mismatch가 문제되고 있다. 이에 자성 반도체는 근본적인 문제를 해결하고 반도체와 자성체의 특성을 동시에 나타내는 물질로써, Si과 Ge (4족) 등의 반도체뿐만 아니라, GaAs, InP (3-5족), ZnO, ZnTe (2-6족) 등의 반도체 또한 많은 연구가 이루어지고 있다. 자성 반도체에서 해결해야 할 가장 큰 문제는 물질이 자성을 잃는 Curie 온도를 상온 이상으로 높이는 것이다. 이에 본 연구는 전이금속이 도핑된 4족 Si 반도체 박막을 성장하고 후처리 공정을 통하여 나타나는 구조적, 자기적 특성을 연구하였다. 펄스 레이저 증착 방법을 통하여 p-type Si 기판위에 전이금속 Fe이 도핑된 박막을 500 nm 로 성장하였다. 성장 온도는 $250^{\circ}C$로 하였고, 성장 분압은 $3 {\times}10^{-3}$Torr 로 유지하며 $N_2$ 가스를 사용하였다. 구조적 결과를 보기 위해 X선 회절 분석과 원자력 현미경 결과를 확인하였고, 자기적 특성을 확인하기 위해 저온에서 초전도 양자 간섭계로 조사하였다. XRD를 통해 (002)면, (004)면의 Si 기판 결정을 보았으며, Fe 관련된 이차상이 형성됨을 예측해 보았다. ($Fe_3Si$, $Fe_2Si$ 등) 초전도 양자 간섭계에서 20 K에서 측정한 이력 현상을 관찰하고, 온도변화에 따른 전체 자기모멘트를 관찰하였으며 이는 상온에서도 강자성 특성이 나타남을 확인하였다.

• 대한자기공명의과학회:학술대회논문집
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• 대한자기공명의과학회 2002년도 제7차 학술대회 초록집
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• pp.111-111
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• 2002

Purpose： This study is to compare the distinct brain activation between implicit and explicit memory retrieval tasks using a non-invasive blood-oxygenation-level-dependent (BOLD) functional magnetic resonance imaging(fMRI). Materials ＆ Methods： We studied seven right-handed, healthy volunteers aged 21-25 years(mean；22 years) were scanned under a 1.5T Signa Horizon Echospeed MR imager(GE Medical Systems, Milwaukee, U.S.A.). During the implicit and explicit memory retrieval tasks of previously teamed words under the conceptual processing, we acquired fMRI data using gradient-echo EPI with 50ms TE, 3000ms TR, 26cm${\times}$26cm field-of-view, 128${\times}$128 matrix, and ten slices(6mm slice thickness, 1 mm gap) parallel to the AC-PC(anterior commissure and posterior commissure) line. By using the program of statistical parametric mapping(SPM99), functional activation maps were reconstructed and quantified.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 대한방사선기술학회지:방사선기술과학
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• 제26권2호
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• pp.57-61
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• 2003

두정부 백질 물질 NAA, Choline(Cho), Creatine(Cr), choline chloride, glutamin 등으로 자체 제작한 phantom을 이용하여 고 자장(4.7T)과 중자장(1.5T)에서의 신호강도 대 잡음비, 스펙트럼 분해능을 알아 볼 수 있는 선폭과 $T_2$, 그리고 $T_E$값의 변화에 따른 각 대사물질의 변화별 스펙트럼 등을 구하여 이론적인 정보와 실제적인 정보와의 차이를 알아보고자 한다. 이용된 기기는 Bruker Biospec 4.7T와 1.5T GE SIGNA를 이용하여 MRS의 결과를 얻었다. 관심영역에서 얻은 정보에서 분광 peak의 면적을 구하였다. 통계처리는 Microsoft사의 Excel program내에 있는 통계 package를 이용하였다. 중자장(1.5T)과 고자장(4.7T)에서의 각각의 대사물질의 스펙트럼을 얻어 본 결과 자장의 균일도와 SNR과 $T_2$값의 차이가 이론적인 값보다는 직선성을 보이지 않았다. 1.5T에서의 선폭은 Cho, Cr, NAA 순서로 $5.30{\pm}1.07,\;4.81{\pm}0.14,\;5.49{\pm}0$, 이에 반해 4.7T에서는 $9.14{\pm}0.55,\;8.87{\pm}0.67,\;9.65{\pm}0.56$ Hz 값이 나왔다. 평균 SNR은 NAA의 물질의 경우를 3회 측정하였는데 그 평균치는 63%의 증가를 보였다. $T_E$ 변화로 스펙트럼을 분석했을 때 $T_E=60ms$일 때 가장 SNR이 좋은 값을 보였고 $T_E=135ms$일 때 가장 낮은 값을 나타나 보였다. 두정부 백질 물질 Phantom을 제작하여 자장의 강도 즉 중자장(1.5T)과 고자장(4.7T)에 따라 분석하게 되었는데 고자장의 영역으로 갈수록 분해능, SNR은 좋아져 보이나 자장의 세기가 커질수록 이론적인 수치보다는 상당히 적은 증가를 보이고 있다는 것을 이 연구를 통해 알게 되었다.