• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.88-88
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.298-298
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.119-119
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• 2005

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.18-22
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• 2007

The phase transition behavior of $Ge_2Sb_2Te_5$ (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under $3^{\circ}C/min$ heating rate in this study. The simulation result agrees well with the experimental results. Therefore, It can be concluded that JMAK equation can be used far the PRAM simulation model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.976-979
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• 2003

In this study, we formed the 2-dimensional holographic grating in order to mamufactured 2-dimensional photonic crystal in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ and $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film which have the excellent optical sensetivity using by He-Ne laser(632.8nm). The intensity of incident beam was 2.5mW and incident angle that $2{\theta}$ is $20^{\circ}$. We formed the holographic grating after had formed the 1-dimansional holographic grating and then rotate the sample. We confirmed that 2-dimensional holographic grating result of the figure of diffracted beam and AFM(Atomic Forced Microcopy) image.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2064-2066
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• 2004

본 논문에서는 새로운 개념인 능동 고조파 결합을 이용한 4위상 전압제어 발진기를 설계, 제작하였다. 4위상 출력 특성을 얻기 위하여 각각의 차동 VCO의 가상 접지(Virtual Ground)면을 본 논문에 제시된 능동 고조파 결합 회로(Active super harmonic coupling)을 이용하여 결합시키는 방법을 적용하였다. 제안된 구조는 다음과 같은 장점을 가지고 있다. 결합구조를 갖는 트랜지스터에 부가적인 전류소비를 줄일 수 있으며, layout상에서 문제되었던 대칭구조를 개선할 수 있다. 또한 기존에 발표되었던 방법인 passive transformer를 이용한 고조파 결합 보다 회로 크기를 줄일 수 있다. 측정결과 출력 전력 -12dBm, -117dBc/Hz @1-MHz 이하의 위상잡음 특성, 2.66GHz${\sim}$2.91GHz의 250 MHz 주파수 가변, 25dB이하의 2차고조파 억압, 7 mA 의 전류 소모(buffer amp. 포함되지 않음)를 가졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.67-68
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• 2009

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.120-122
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• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide $Ge_2Sb_2Te_5$ thin film. $T_c$(crystallization temperature) is confirmed by measuring the resistance and conductivity with the varying temperature on the hotplate. We have measured I-V characteristics with $Ge_2Sb_2Te_5$ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration that used voltage and current source.