• Journal of Powder Materials
• /
• v.18 no.5
• /
• pp.449-455
• /
• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.617-620
• /
• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.237.2-237.2
• /
• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Korean Journal of Soil Science and Fertilizer
• /
• v.45 no.4
• /
• pp.649-656
• /
• 2012

To obtain the basic information for agricultural utilization of germanium (Ge), the growth characteristics and Ge absorption in rice plant were investigated under different Ge concentrations by foliar spray application. The Ge concentrations were treated with 0 (control), 10, 20, 40 and $80mg\;L^{-1}$ in pot (1 5000$^{-1}$ a), respectively. The Ge absorption rate in rice by foliar spray application with $80mg\;L^{-1}$ in pot was higher in the order of leaf (5.75%) > stem (4.52%) > root (<0.01%). By foliar spray application, the Ge content in rice was higher in the order of $80mg\;L^{-1}$ > $40mg\;L^{-1}$ > $20mg\;L^{-1}$ > $10mg\;L^{-1}$. When rice was treated with $80mg\;L^{-1}$ of Ge, the Ge content in rice grain was higher in the order of rice bran ($0.21mg\;pot^{-1}$) $\gg$ brown rice ($0.04mg\;pot^{-1}$) ${\geq}$ polished rice ($0.03mg\;pot^{-1}$). By foliar spray application, the Ge uptake in rice bran was higher than that in other parts. Therefore, optimum Ge concentration by foliar spray application was $80mg\;L^{-1}$ in pot based on the results from the Ge treatments.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.5
• /
• pp.16-22
• /
• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.3270-3275
• /
• 2007

DME (Dimethyl Ether, $CH_3OCH_3$) has highly attracted attention as an alternative fuel for transportation, power generation and LPG substitute owing to its easy transportation and cleanliness. This study was conducted to verify the combustion performance and to identify potential problems when DME is fuelled to a gas turbine. GE7EA gas turbine of Pyong-Tak power plant was selected as a target to apply the DME. Combustion tests were conducted by comparing DME with methane, which is a major component of natural gas, in terms of combustion instability, $NO_X$ and CO emissions, and the outlet temperature of the combustion chamber. The results of the performance tests show that DME is very clean but has a low combustion efficiency in low load condition. From the results of the fuel nozzle temperature we have ascertained that DME is easy to flash back, and this property should be considered when operating a gas turbine and retrofitting a burner.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.4 no.2
• /
• pp.31-36
• /
• 2005

Machining technique for optical crystals with single point diamond turning tool is reported in this paper. The main factors influencing the machined surface quality are studied and regularities of machining process are drawn. Optical crystals have been known to more and more important applications in the field of modern optics. Ge is more brittle material of poor machinability. The traditional machining method is polishing which has many shortcomings such as low production efficiency, poor ability to be automatically controlled and edge effect of the workpiece. The purpose of our research is to find the optimum machining conditions for ductile cutting of Ge and apply the SPDTM technique to the manufacturing of ultra precision optical components of Ge. As a result, the surface roughness is the best when cutting speed is 180m/min, feed rate is 2mm/min, depth of cut is $0.5{\mu}m$ and nose radius of tool is 0.8mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1029-1032
• /
• 2004

This paper investigates that how diffraction efficiency is going to change according to amorphous As-Ge-Se-S. We made films such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8$ on the basis of 633nm, which is wavelength of recording laser(He-Ne). Among them, $\lambda/4$ has the highest diffraction efficiency value, while $\lambda/8$ has the lowest. The experiment shows that the highest diffraction efficiency value of $\lambda/4$ is about 0.09%, whereas diffraction efficiency of $\lambda/8$ is formed, which is merely close to 0%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.11
• /
• pp.1318-1323
• /
• 2010

A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.05a
• /
• pp.27-30
• /
• 1988

This paper is investigated on the sublimation in obliguely deposited a-$Se_{75}Ge_{25}$ films. With varying the treatment conditions, the transmittance in each of $0^{\circ}$, $60^{\circ}$, and $80^{\circ}$-deposited films and the absorbance in $80^{\circ}$-deposited film were measured. By increasing the angle of deposition, the variation of transmittance in post-exposure annealing film showed the characteristic different from that in only exposed film or annealed film. And the changes of thickness in $80^{\circ}$-deposited film were measured. The results showed that the changing rate of thickness was 1.4% in exposed film and 9.4% in post-exposure annealing film. Therefore, in $80^{\circ}$-deposited film, the possibility for sublimatin due to physical and chemical change by post-exposure annealing can be suggested.