• Nuclear Medicine and Molecular Imaging
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• v.41 no.1
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• pp.49-53
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• 2007

Purpose: It was reported that CT-based measured attenuation correction (CT-MAC) produced radioactivity concentration values significantly higher than $^{68}Ge$-based segmented attenuation correction (Ge-SAC) in PET images. However, it was unknown whether the radioactivity concentration difference resulted from different sources (CT vs. Ge) or types (MAC vs. SAC) of attenuation correction (AC). We evaluated the influences of the source and type of AC on the radioactivity concentration differences between reconstructed PET images in normal subjects and patients. Material and Methods: Five normal subjects and 35 patients with a known or suspected cancer underwent $^{18}F-FDG$ PET/CT. In each subject, attenuation corrected PET images using OSEM algorithm (28 subsets, 2 iterations) were reconstructed by 4 methods: CT-MAC, CT-SAC, Ge-MAC, and Ge-SAC. The physiological uptake in normal subjects and pathological uptake in patients were quantitatively compared between the PET images according to the source and type of AC. Results: The SUVs of physiological uptake measured in CT-MAC PET images were significantly higher than other 3 differently corrected PET images. Maximum SUVs of the 145 foci with abnormal FDG uptake in CT-MAC images were significantly highest among 4 differently corrected PET images with a difference of 2.4% to 5.1% (p<0.001). The SUVs of pathological uptake in Ge-MAC images were significantly higher than those in CT-SAC and Ge-MAC PET images (p<0.001). Conclusion: Quantitative radioactivity values were highest in CT-MAC PET images. The adoption of MAC may make a more contribution than the adoption of CT attenuation map to such differences.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1080-1086
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• 2005

We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• 대한방사선방어학회:학술대회논문집
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• 2009.11a
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• pp.44-45
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• 2009

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1543-1548
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• 2005

Two isostructural new alkaline earth germanium nitrides, $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, were obtained as single crystals from constituent elements in molten Na. They both crystallize in space group $P_{mmn}$ (No. 59) with a = 4.0007(8), b = 17.954(3), c = 9.089(2) $\AA$, Z = 2, and a = 4.1620(2), b = 18.841(1), c = 9.6116(5) $\AA$, Z = 2, for $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, respectively. Their crystal structure contains features for both Zintl and nitride phases: zigzag anionic chain of $_{\infty}Ge^{2-}$, and dumbbell-shaped bent anion of ${GeN_2}^{4-}$. Counter cations of Sr or Ba wrap these anionic units in a channel-like arrangement. Unlike in other germanium nitrides, bond lengths of both Ge-N arms of the ${GeN_2}^{4-}$, are same in $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.635-641
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• 2004

This paper presents a new low-cost RF Built-In Self-Test (BIST) circuit for measuring transducer voltage gain, noise figure and input impedance of 5.25GHa low noise amplifier (LNA). The BIST circuit is designed using 0.18${\mu}{\textrm}{m}$ SiGe technology. The test technique utilizes input impedance matching and output transient voltage measurements. The technique is simple and inexpensive. Total chip size has additional area of about 18% for BIST circuit.

• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.221-225
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• 2007

The possibility of improving amplification characteristics and lowering the melting point of bismuth-doped aluminosilicate glass as a new amplification material, which has broadband near-infrared emission at 1300 nm regions, was investigated. Spectroscopic analysis of bismuth-doped aluminosilicate glass shows that the addition of an alkali metal oxide, $Li_{2}O$ increases FWHM of fluorescence spectrum but decreases fluorescence intensity, while $GeO_{2}$ composition increases both FWHM of fluorescence spectrum and fluorescence intensity. Also, excellent optical amplification gain characteristics in a $GeO_{2}$-added sample were observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.49-52
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• 2002

A new method is developed to extract model parameters of SiGe HBT equivalent circuit including the base impedance and base-collector junction capacitance. Using this method, all resistances and capacitances of SiGe HBT are independently determined from measured S-parameters using two-port parameter formula. This method is proposed to reduce possible errors generated from global optimization process, and its accuracy has been verified by finding good agreements between measured and modeled current / power gain up to 18 GHz.

• Korean Journal of Digital Imaging in Medicine
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• v.6 no.1
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• pp.9-18
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• 2003

디지털 영상 검출기와 디스플레이 기술의 발달과 의료영상전달시스템(PACS)의 출현은 전통적 필름방식에 비하여 디지털 방식으로 방사선과 영상을 획득하고 전송, 저장하는 매우 효과적인 수단을 제공하고 있다. 2002년 8월, 연세의료원 세브란스병원은 진단 영상 판독 목적으로 18 대의 CRT(Braco View, Belgium)와 32대의 평판 LCD(Totoku Electric Co., Ltd., Japan) 디스플레이 장치를 GE full-PACS(GE 메디칼시스템코리아 : GEMSK)와 연계하여 설치 완료하였다. 본 연구에서, 기하학적 왜곡, 반사, 휘도 반응, 휘도 균일도, 분해능, 노이즈,베일링 글레어, 칼라 균일도 항목들을 AAPM TG18 보고서 9.0에 따라서 시각적 그리고 부분적으로는 정량적인 방법으로 인수검사를 실시하여 보고한다. 사용된 장비는 색도계로도 사용되는 간편한 휘도계, TG18 테스트 패던, AAPM Tg18 AT plug-in software(Barco View Ltd., Kortrijk, Belgium)이었다. 칼라 균일도를 제외한 모든 테스트 결과는 AAPM TG18에서 권고하는 기준에 일치하였으며 진단 영상 판독에 사용하기에 전적으로 수락할 수 있는 성능이었다. 결론으로, 사용된 인수검사는 단지 인수 검사 표준을 제공하는 것 뿐만 아니라 품질검사(QC)의 지침, 판독 환경의 최적화 그리고 교체 시기나 업그레이드 시기를 결정하여주는 중요한 역할을 할 수 있을 것이다.