• Applied Science and Convergence Technology
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• 제26권6호
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• pp.174-178
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• 2017

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.135-135
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• 2013

The electronic and adsorption structures of Mg and p-tert-butylcalix[4]arene (p-TBCA) adsorbed onto a Ge(100) surface under a variety of sample conditions were characterized using high-resolution photoemission spectroscopy (HRPES) and their corresponding DFT calculation results. Interestingly, after 0.10 ML p-TBCA molecules had been adsorbed onto a Ge(100) surface, subsequent adsorption of a small amount of metallic Mg (~0.10 ML) resulted in the formation of a capped structure inside the pre-adsorbed p-TBCA molecules. The adsorption structures resulting from further deposition of Mg (~0.50 ML) onto the Ge(100) surface were monitored based on the surface charge state and Mg 2s core level spectrum. Work function measurements clearly indicated the electronic structures of the Mg and p-TBCA adsorbed onto the Ge(100) surface. Moreover, we confirmed that three different adsorption structures are experimentally favorable at room temperature through DFT calculation results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.136-136
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• 2013

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were conducted to track the coverage dependent variation of the absorption structure of 2-thiophenecarboxaldehyde (C4H3SCHO: TPCA) on the Ge(100) surface at room temperature. In an effort to identify the most probably adsorption structures on the Ge(100) surface, we deposited TPCA molecules at a low coverage and at a high coverage and compared the differences between the electronic features measured using HRPES. The HRPES data provided three possible adsorption structures of TPCA on the Ge(100) surfaces, and DFT calculations were used to determine the plausibility of the structures. HRPES analysis, corroborated by DFT calculations, indicated that an S-dative bonded structure was the most probable adsorption structure at relatively lower coverage levels, the [4+2] cycloaddition structure was the second most probable structure, and the [2+2]-C=O cycloaddition structure was the last probable structure on the Ge(100) surfaces at relatively higher coverage levels.

• 한국결정성장학회지
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• 제21권4호
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• pp.153-157
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• 2011

Inductively Coupled Plasma(ICP)를 이용하여 다양한 조건으로 표면 처리한 Si(100) 기관 위에 Low Pressure Chemical Vapor Deposition(LPCVD)를 이용하여 Ge 층을 이종접합 성장하고, Ge 층 성장 초기의 표면 상태를 Scanning Electron Microscopy(SEM)을 통해 분석하였다. ICP를 이용하여 표면 처리된 Si(100) 기판 위에 성장된 Ge 층의 경우 ICP 처리하지 않은 시편보다 Ge 성장율이 약 5배 이상 증가되었다. ICP 처리된 시편의 Ge 성장률 증가는 ICP 표면 처리 공정으로 Si 기관 표면에서 떨어져 나간 missing dimer가 Ge adatom들에 핵을 형성할 자리를 제공하여 Ge island의 형성과 융합을 촉진시키는 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.213-213
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• 2012

We first confirm the tautomerization of 2-thiazoline-2-thiol on Ge (100) surface using CLPES and DFT calculation. We clearly confirmed that there exist two different molecular structures (we well show in our poster) in C 1s, N 1s, and S 2p CLPES spectra. Moreover, we obtained two plausible adsorption structures using DFT calculation which are that one is s-dative bonded structure and the other is SH dissociated-N-dative bonded structure although their stabilities are different on Ge (100) surface. We will investigate this interesting result for the confirmation of tautomerization of 2-thiazoline-2-thiol molecule adsorbed on Ge (100) surface.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• 한국진공학회지
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• 제2권2호
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• pp.161-165
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• 1993

Si(100)와 Si(111) 표면에 에피 성장시킨 Ge의 기하학적, 전기적 구조가 scanning tunneling microscope로 연구되었다. Ge 원자는 scanning tunneling spectroscopy와 bias 전압을 달리한 STM 상에서 Si 원자와 구별되었다. 이것을 이용하여 Ge의 성장 형태를 연구하였다. (2${\times}$1) 재배열 구조를 가진 (100) 표면에서 Ge 성장층은 720K에서 B형의 step edge로부터 주로 성장하였다. (111) 표면에서도 주로 step edge에서 성장하였으며, Ge의 양과 annealing 온도에 따라 (5${\times}$5)와 (7${\times}$7)구조가 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.78-78
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• 2010

The Adsorption structures of phenylalanine on Ge(100) surface have been investigated as a function of coverage using high-resolution photoemission spectroscopy (HRPES) and density functional (DFT) calculation. To converge these experimental and theoretical conclusion, we systematically performed HRCLPES measurements and DFT calculation for various coverage in the adsorption structures of phenylalanine molecules on the Ge(100) surface. In this study, we found two different adsorption structure as a function of coverage in phenylalanine on Ge(100), monitoring three core level spectra (Ge 3d, C 1s, N 1s, and O 1s) using HRPES Through analysis of the binding energies, we confirmed that O-H dissociated and N dative-bonded structure emerges at low coverage (0.10 ML), which is the same to the result of glycine and alanine on Ge(100) system, whereas O-H dissociation structure also appears at higher coverage. Moreover, we observed the shape of phenyl group being included in phenylalanine is changed from flat to tilting structure at final state using DFT calculation. Through the spectral analysis for phenylalanine, we will demonstrate variation of coverage dependent structural change for phenylalanine on Ge(100) surface using experimental (HRPES) and theoretical studies (DFT calculation).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.212-212
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• 2012

The Coverage dependent attachment of multifunctional groups included in threonine molecules adsorbed to Ge (100)$-2{\times}1$ surface was investigated using core-level photoemission spectroscopy (CLPES) and density functional theory (DFT) calculations. The core-level spectra at a low coverage indicated that the both carboxyl and amine groups participated in the bonding with the Ge (100) surface by "O-H dissociated and N-dative bonded structure". However, at high coverage level, additional adsorption geometry of "O-H dissociation bonded structure" appeared possibly to minimize the steric hindrance between adsorbed molecules. Moreover, the C 1s, N 1s, and O 1s core level spectra confirmed that the carboxyl oxygen is more competitive against the hydroxymethyl oxygen in the adsorption reaction. The adsorption energies calculated using DFT methods suggested that four of six adsorption structures were plausible. These structures were the "O-H dissociated-N dative bonded structure", the "O-H dissociation bonded structure", the "Om-H dissociated-N dative bonded structure", and the "Om-H dissociation bonded structure" (where Om indicates the hydroxymethyl oxygen). These structures are equally likely, according to the adsorption energies alone. Conclusively, we investigate in threonine on Ge (100) surface system that the "O-H dissociated-N dative bonded structure" and the "O-H dissociation bonded structure" are preferred at low coverage and high coverage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.216-216
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• 2011

We will investigate the bonding configurations of phenylalanine and tyrosine adsorbed on the Ge(100) surface using CLPES and DFT calculations. First, the C 1s, N 1s, and O 1s spectra obtained at 300 K revealed that both the amine and carboxyl groups of phenylalanine and tyrosine concurrently participated in adsorption on the Ge(100) surface without bond breaking using CLPES, depending on the extent of coverage. In the second place, we confirmed that the "O-H dissociated-N dative bonded structure" is the most stable structure implying kinetically favorable structure, and the "O-H dissociation bonded structure" is another stable structure manifesting thermodynamically advantageous structure using DFT calculations. This tendency turns up both phenylalanine and tyrosine, similarly. Furthermore, through the CLPES data and DFT calculation data, we discovered that the "O-H dissociated-N dative bonded structure" and the "O-H dissociation bonded structure" are preferred at 0.30 ML and 0.60 ML, respectively. Moreover, we found that the phenyl ring of phenylalanine is located in axial position to Ge(100) surface, but the phenyl ring of tyrosine is located in parallel to Ge(100) surface using DFT calculations.