• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.768-771
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2217-2222
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e. projected range and standard projected deviation, The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model for the change of oxide thickness. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60 mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the relationship of subthreshold swing and oxide thickness have been analyzed according to the shape of doping distribution.

• Korean Journal of Remote Sensing
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• v.35 no.1
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• pp.93-115
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• 2019

The availability of high-resolution laser scanning data and advanced machine learning algorithms has enabled an accurate potential rockfall source identification. However, the presence of other mass movements, such as landslides within the same region of interest, poses additional challenges to this task. Thus, this research presents a method based on an integration of Gaussian mixture model (GMM) and ensemble artificial neural network (bagging ANN [BANN]) for automatic detection of potential rockfall sources at Kinta Valley area, Malaysia. The GMM was utilised to determine slope angle thresholds of various geomorphological units. Different algorithms(ANN, support vector machine [SVM] and k nearest neighbour [kNN]) were individually tested with various ensemble models (bagging, voting and boosting). Grid search method was adopted to optimise the hyperparameters of the investigated base models. The proposed model achieves excellent results with success and prediction accuracies at 95% and 94%, respectively. In addition, this technique has achieved excellent accuracies (ROC = 95%) over other methods used. Moreover, the proposed model has achieved the optimal prediction accuracies (92%) on the basis of testing data, thereby indicating that the model can be generalised and replicated in different regions, and the proposed method can be applied to various landslide studies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Bulletin of the Korean Mathematical Society
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• v.51 no.1
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• pp.213-219
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• 2014

We prove that a semi-symmetric 3-dimensional gradient Ricci soliton is locally isometric to a space form $\mathbb{S}^3$, $\mathbb{H}^3$, $\mathbb{R}^3$ (Gaussian soliton); or a product space $\mathbb{R}{\times}\mathbb{S}^2$, $\mathbb{R}{\times}\mathbb{H}^2$, where the potential function depends only on the nullity.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.5 no.4
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• pp.339-346
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• 2005

Artificial potential field (APF) is a widely used method for local path planning of autonomous mobile robot. So far, many different types of APF have been implemented. Once the artificial potential functions are selected, how to choose appropriate parameters of the functions is also an important work. In this paper, a detailed analysis is given on how to choose proper parameters of artificial functions to eliminate free path local minima and avoid collision between robots and obstacles. Two kinds of potential functions: Gaussian type and Quadratic type of potential functions are used to solve the above local minima problem respectively. To avoid local minima occurred in realistic situations such as 1) a case that the potential of the goal is affected excessively by potential of the obstacle, 2) a case that the potential of the obstacle is affected excessively by potential of the goal, the design guidelines for selecting appropriate parameters of potential functions are proposed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.716-718
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.