• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.917-919
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• 2009

Effects of nano-silver contents(15~50wt%) on screen printed-etched gate electrodes and electrical characteristics of OTFTs were investigated. As Ag contents increased, the screen-printed film was transferred exactly without spreading and obtained the densely-packed layer with a stable and excellent conductivity but, its thickness was increased and surface became rougher. It was found that the leakage current of MIM devices and off-state currents of OTFTs became larger due to poor step coverage of PVP dielectric layer on the thick and rough gate electrodes for nano-Ag inks with Ag contents more than 30wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.6
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• pp.9-15
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• 2005

In this research the discharge characteristics of logic gate of the discharge logic gate plasma display panel with the NOT-AND logic function newly designed was analyzed. As for this discharge logic gate a logical output is induced by controlling the voltage between the electrodes using the discharge path. From the experimental result the discharge characteristics of logic gate is influenced by the interrelation of the voltages appling two vertical electrodes. To in the application possibility to large screen PDP, the discharge characteristics by the line resistance of the electrode was evaluated In result it has been inferred that the influence which the drop of voltage by the line resistance of two vertical electrodes exerts on the discharge of the logic gate is minute. Through the experiment, the optimized values of the pulse voltages and the current limitation resistances of each electrode which composed the discharge logic gate were obtained and maximum operation margin of 49[V] was obtained.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.546-551
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• 2000

A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.597-600
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• 2006

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.