• IE interfaces
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• v.20 no.1
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• pp.87-93
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• 2007

Burn-in is an engineering method for screening out products containing reliability defects which would cause early failures in field operation. Previously, various burn-in models have been proposed mainly focused on the trade-off of shop repair cost and warranty cost ignoring manufacturing yield. From the view point of a manufacturer, however, burn-in decreases warranty cost at the expense of yield reduction. In this paper, we provide a general model quantifying a trade-off between product yield and reliability, in which any defect distribution from previous yield models can be used. A profit function is expressed in burn-in environments for determining an optimal burn-in time. Finally, the method is illustrated with gate oxide failures which is an important reliability concerns for VLSI CMOS circuits.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.421-423
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• 2005

A bootstrap circuit for floating power supply has the advantage of being simple and inexpensive. However, the duty cycle and on-time are limited by the requirement to refresh the charge in the bootstrap capacitor. Hence, this paper deals with a design of charge pump circuit for a floating gate power supply of an IPM. The operation of the proposed circuit applied by three-phase inverter system for driving induction motor are verified through the experiments.

• The KSFM Journal of Fluid Machinery
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• v.12 no.2
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• pp.31-38
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• 2009

The valve performance has been evaluated from the theoretical equation based on design information such as packing thrust, spring preload and friction coefficient(${\mu}$). The accuracy of those data can be lower than that of vendor's initial design data. Especially, the friction coefficient can be degraded with time than the original condition and the valve performance calculated using the previous friction coefficient can not be available. Accordingly, this paper is describing a new performance evaluation method of valve based on diagnostic test data which are acquired from a site valve tested in static and dynamic conditions. Especially, this paper provides a new method using friction coefficient(${\mu}$) which is derived from the diagnostic test data acquired in the valve's design basis condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.238-242
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• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.295-298
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• 2016

Future logic device over the FinFET generation requires a complete electrostatics and transport characteristic for low-power and high-speed operation as extremely scaled devices. Silicon, Germanium and III-V based nanowire-based MOSFET devices and few-layer TMDC (Transition metal dichalcogenide monolayers) based multi-gate devices have been brought attention from device engineers due to those excellent electrostatic and novel device characteristic. In this study, we simulated ultrascaled Si/Ge/InAs gate-all-around nanowire MOSFET and MoS2 TMDC based DG MOSFET and TFET device by tight-binding NEGF method. As a result, we can find promising candidates of the future logic device of each channel material and device structures.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.535-538
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• 2008

Insert-injection molding can inject two different materials or two colors in the same mold and process. If this injection process use, product has ability because the base part maintain strength and specified part can inject soft-material. It makes the cost down by single operation automatically for saving wages. In this paper, we designed double-injection mold for automobile remote control to inject secondary using this part as insert after inject external appearance of product. CAE analysis was progressed gate location and runner size as variable and analysis result is reflected in mold design process. As a result, it could solved badness that is generated at the conventional mold. Additionally, cost is downed by reducing loss of runner as well as could omit painting process because surface of finished product is improved through new mold.

• Wind and Structures
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• v.1 no.1
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• pp.67-75
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• 1998

Tiger Gate Bridge, a steel suspension bridge with a main span of 888 m and a stiffening box girder, is located at the Pearl River Estuary, Guangdong Province, one of the typhoon-prone area in China. Focusing on the developing of the full aeroelastic model of the bridge and simulation of the wind field of the bridge site in a large boundary wind tunnel at Tongji University, Shanghai, China, some main results about the wind resistant properties of the bridge including aerodynamic instability, buffeting responses both being in operation and erection stages by using of a full aeroelastic model wind tunnel testing are introduced. Some of analytical approaches to those aerodynamic behaviours are also presented, and compared with experimental data of the testing.

• International Journal of Advanced Culture Technology
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• v.10 no.3
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• pp.332-338
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• 2022

The article presents a concept of designing a Multiplexer circuit which acts as a "Selector" and that becomes capable to select different speed created at different TTL Gate configurations; Standard TTL(Normal Speed), High Speed TTL(High Speed), Schottky TTL(Super High Speed) and further connect the selected Gate speed to the CAR shape created using C-Programming at Computer Graphics and finally CAR shape display at different speed to the color TV. The Multiplexer supporting efficient and more reliable selection criteria using "Logical based selection criteria" and further the output from multiplexer is provided to CAR shape created using c-programming and finally CAR shape is display to color TV system. Basic purposes and assumptions regarding the design and development of this system as well as a description of its operation have been presented.

• Progress in Superconductivity and Cryogenics
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• v.24 no.2
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• pp.23-26
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• 2022

A lossless transport of an arbitrary waveform in a frequency range of 10⁶-10⁹ Hz through a conduction channel in a cryogenic temperature is of importance for a high-speed operation of quantum device. However, it is hard to use a commercial oscilloscope to directly detect the waveform travelling in a device located in a cryogenic system. Here, we developed a cryogenic voltage sampling technique by using a Schottky barrier gate prepared on a surface of a GaAs/AlGaAs device, which revealed that an incident rectangle waveform can transport through a 1 mm long two-dimensional conduction channel without waveform deformation up to 20 MHz, while further study is needed to increase the detection frequency.