• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.304-312
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• 2011

In this study, MOSFET type micro hydrogen gas sensors with platinum catalytic metal gates were designed, fabricated, and their electrical characteristics were analyzed. The devised MOSFET Hydrogen Sensors, called MHS-1 and -2, were designed with a platinum gate for hydrogen gas adsorption, and an additional sensing part for higher gas sensitivity and with a micro heater for operation temperature control. In the electrical characterization of the fabricated Pt-gate MOSFET (MHS-1), the saturated drain current was 3.07 mA at 3.0 V of gate voltage, which value in calculation was most similar to measurement data. The amount of threshold voltage shift and saturated drain current increase to variation of hydrogen gas concentration were calculated and the hydrogen gas sensing properties were anticipated and analyzed.

• Journal of Information Display
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• v.6 no.2
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• pp.16-18
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) are fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layer on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility is increased to more than 35 times than that of the TFT which has only a gate insulator of $SiO_2$ at the same electric field. The carrier mobility of $1.80cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}/I_{off}$ current ratio> $1.10{\times}10^5$ are obtained less than -30 V bias condition. The result is one of the best reported performances of pentacene TFTs with hybrid insulator including cross-linked PVA layer as a gate insulator at relatively low voltage operation.

• Journal of the Korean Society of Safety
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• v.30 no.4
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• pp.92-98
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• 2015

This paper was carried out to prove the relation between static loads acting on the sluice(hydrostatic) and dynamic loads (additional loads) arising from opening or closing of sluice, through measuring the operation of shell-type roller gate by using the method of measuring of the completely opening water gate, as measured from one excitation state, it was confirmed to be capable of measuring the natural frequency reliable measurement results. Throughout the test, we prove that it's a reasonable way to estimate the default margin of safety when calculated by dividing the sum of the hydrostatic stress to the maximum stress and additional stress. The application of this paper's safety estimation method can be utilized as the basic data for the systematic and rational maintenance management of dams and submerged weirs in the future, and it is expected that this study can bring forth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.34-42
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• 1981

A 512-bit Task Programmable ROM has been designed and fabricated using PMOS technology. The content of the memory was written through the gate pattern during the fabrication process, and was checked by displaying the output of the chip on an oscilloscope with 512(32$\times$16) matrix points. The operation of the chip was surcessful with operating voltage from -6V to -l2V, The power consumption and propagation delay time have been measured to be 3mW and 13 $\mu$sec, respectively at -6 Volt. The power consunption increased to 27mW and propagation delay time decreased to 3$\mu$sec at -12V. The output of the chip was capable of driving the input of a TTL gate directly and retained a high impedence state when the chip solect function disabled the output.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.151-154
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• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.530-534
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• 2003

A novel all-optical NOR gate is proposed and demonstrated for the first time by use of gain saturation in a semiconductor optical amplifier (SOA). It is operated by the nonlinearity of the SOA gain. Hence, to obtain sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier at the input of the SOA. The operation characteristics of the all-optical NOR gate are successfully measured at 10 Gbit/s.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.99-102
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• 2004

In this work the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulator have been studied. For the surface treatment of gate dielectric, Ar plasma was used. Pentacene and PVP were used as active and dielectric layers respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $10^{-6}$ Torr and at a deposition rate of 0.5 $\AA$/sec. PVP was spin coated and cured at $100^{\circ}C$. before pentacene deposition. organic thin film transistors with surface-treated gate insulators have provided improved operation characteristics.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.22 no.3
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• pp.15-23
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• 2014

There have been CFIT(Controlled Flight Into Terrain) accidents that can be prevented if the crew executed go-around. This study is to analyse the common factors of three typical CFIT accidents of Korea in TEM(threat and error management) frame, and the examples of go-around gate and the countermeasures of eight airlines through the survey facilitating go-around to prevent CFIT. The common factors found in three typical CFIT accidents occurred in Korea or by Korean carriers turned out to be in mountainous terrain, in bad weather while in non-precision approach or circling approach by captain as PF(Pilot Flying) when crew make monitoring errors and communication errors. It also turned out that the crew in all three typical tragic CFIT accidents did not execute go-around in unstabilized approaches. The captains did not respond immediately when first officers advised them to go-around until it is too late. Seven out of eight Airlines answered that they use stabilized approach height as 1,000 feet to be stabilized earlier to have more safety margin by enhancing go-around gate regardless of the weather to prevent CFIT in the survey.

• Journal of Navigation and Port Research
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• v.29 no.9
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• pp.789-793
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• 2005

The container terminals in Korea usually adopts both the bar code and the image recognition systems at the gate complex to capture necessary information on containers passing through the gate. With the rapid advancement of Information Technology(IT) these systems, however, seem to make the user not satisfied due to the inherent limitations such as the long process time taken, low rate of recognition etc., This paper, therefore, examines the adoption of Radio Frequency Identification (RFID) technology to container terminals, and tried to get some implication for the way to improve the productivity of the terminal. The results imply that some improvement in the gate and storage yard operation is feasible by the benefit of using the information of vehicles and containers collected in advance by RFID technology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1725-1728
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• 2009

This research developed process control device and FGV pattern generating device essential for full gate visual inspection to improve process so that defect detection capability may be maximized in specified environment. The devices developed in this research, which can be swiftly replaced in case loss or error occurs, are anticipated to improve module yield as well as maintain tact loss near '0'. In addition, as a result of mounting H/W and S/W system to control detailed operation sequence in production line and executing performance check and verification, detection rates were 98.1% and 99.1% respectively for pixel defect by tact and line defect, and yield of the entire module process including gate and visual level test increased up to 98.3%.