• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1815-1821
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• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.65-77
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• 2000

We propose a new formulation by quadratic boolean programming to partition circuits for FPGA based reconfigurable circuit boards, in which the routing topology among IC chips are predetermined. The formulation is to minimize the sum of the wire length by considering the nets passing through IC chips for the interconnections between chips which are not adjacent, in addition to the constraints considered by the previous partition methods. We also describe a heuristic method, which consist of module assignment method to efficiently solve the problem. Experimental results show that our method generates the partitions in which the given constraints are all satisfied for all the benchmark circuits tested. The pin utilization are reduced for the most of the circuits and the total wire length of the routed nets are improved up to 34.7% compared to the previous method.

• Journal of Information Display
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• v.7 no.4
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• pp.21-23
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• 2006

We developed a 4.5" 192${\times}$64 active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is 800${\mu}m$ and lO${\mu}m$ respectively and the driving OTFT has 1200${\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5$ $cm^2$/V·sec, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.44 no.4 s.316
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• pp.51-59
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• 2007

In this paper, we propose an efficient hardware architecture for H.264/AVC CAVLC (Context-based Adaptive Variable Length Coding) decoding which used for baseline profile and extended profile. Previous CAVLC architectures are consisted of five step block and each block gets effective bits from Controller block and Accumulator. If large number of non-zero coefficients exist, process for getting effective bits has to iterates many times. In order to reduce this unnecessary process, we propose two techniques, which combine five steps into four steps and reduce process to get efficiency bit by skipping addition step. By adopting these two techniques, the required processing time was reduced about 26% compared with previous architectures. It was designed in a hardware description language and total logic gate count was 16.83k using 0.18um standard cell library.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.31-37
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• 2000

In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• Journal of Korea Multimedia Society
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• v.3 no.2
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• pp.192-200
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• 2000

8 bit and 16 bit microprocessors are widely used in the small sited control machine. The embedded microprocessors which is integrated on a single chip with the memory and I/O circuit must have simple hardware circuit and high code density. This paper proposes a 16 bit high code density EISC(Extendable Instruction Set Computer) microprocessor. SE1608 has 8 general purpose registers and 16 bit fixed length instruction set which has the short length offset and small immediate operand. By using an extend register and extend flag, the offset and immediate operand in instruction could be extended. SE1608 is implemented with 12,000 gate FPGA and all of its functions have been tested and verified at 8MHz. And the cross assembler, the cross C/C++compiler and the instruction simulator of the SE1608 have been designed and verified. This paper also proves that the code density$.$ of SE1608 shows 140% and 115% higher code density than 16 bit microprocessor H-8300 and MN10200 respectively, which is much higher than traditional microprocessors. As a consequence, the SE1608 is suitable for the embedded microprocessor since it requires less program memory to any other ones, and simple hardware circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.71-76
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• 2008

H.264(or MPEG-4/AVC pt.10) is a high performance video coding standard, and is widely used. Variable length code (VLC) of the H.264 standard compresses data using the statistical distribution of values. A decoder parses the compressed bit stream and searches decoded values in lookup tables, and the decoding process is not easy to implement by hardware. We propose an architecture of variable length decoder(VLD) for the H.264 baseline profile(BP) L4. The CAVLD decodes syntax elements using the combination of arithmetic units and lookup tables for the optimized hardware architecture. A barral shifter and a first 1's detector parse NAL bit stream, and are shared by Exp-Golomb decoder and CAVLD. A FIFO memory between CAVLD and the reorder unit and a buffer at the output of the reorder unit eliminate the bottleneck of data stream. The proposed VLD is designed using Verilog-HDL and is implemented using an FPGA. The synthesis result using a 0.18um standard CMOS technology shows that the gate count is 22,604 and the decoder can process HD($1920{\times}1080$) video at 120MHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.8
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• pp.3748-3759
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• 2013

The purpose of this study was to examine the classification accuracies of ML, MAP, and EAP methods under DINA model. For this purpose, this study examined the classification accuracies of the classification methods under the various conditions: the number of attributes, the ability distribution of examinees, and test length. To accomplish this purpose, this study used a simulation method. For the simulation study, data was simulated under the various simulation conditions including the number of attributes (K= 5, 7), the ability distribution of examinees (high, middle, low), and test length (J= 15, 30, 45). Additionally, the percent of agreements between true skill patterns(true ${\alpha}$) and skill patterns estimated by the ML, MAP, and EAP methods were calculated. The summary of the main results of this study is as follows: First, When the number of attributes was 5 and 7, the EAP method showed relatively higher average in the percent of exact agreement than the ML and MAP methods. Second, under the same conditions, as the number of attributes increased, the average percent of exact agreement decreased in ML, MAP, and EAP methods. Third, when the prior distribution of examinees ability was different from low to high under the conditions of the same test length, the EAP method showed relatively higher average in the percent of exact agreement than those of the ML and MAP methods. Fourth, the average percent of exact agreement increased in all methods, ML, MAP, and EAP when the test length increased from 15 to 30 and 45 under the conditions of the same the ability distribution of examinees.