• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.562-564
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• 1994

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.

• Journal of Power Electronics
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• v.12 no.6
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.3
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• pp.25-30
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• 2014

This paper describes the design of gate driver circuits in distributed maximum power point tracking(DMPPT) controller for photovoltaic system. For the effective DMPPT control in the existence of shadowed modules, high voltage gate driver is applied to drive the DC-DC converter in each module. Some analog blocks such as 12-b ADC, PLL, and gate driver are integrated in the SoC for DMPPT. To reduce the power consumption and to avoid the high voltage damage, a short pulse generator is added in the high side level shifter. The circuit was implemented with BCDMOS 0.35um technology and can support the maximum current of 2A and the maximum voltage of 50V.

• Journal of Power Electronics
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• v.11 no.1
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• pp.10-15
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• 2011

In this paper, a new soft switching three phase inverter with a quasi-resonant dc-link is presented. The proposed inverter has a dc-link switch and an auxiliary switch. The inverter switches are turned on and off under zero voltage switching condition and all auxiliary circuit switches and diodes are also soft switched. The control utilizes PWM and the auxiliary switch does not require an isolated gate drive circuit. In this paper, the operation analysis and design considerations of the proposed soft switching inverter are discussed. The presented experimental results of a realized prototype confirm the theoretical analysis.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1853-1859
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• 2008

IGBT modules are designed for low loss, rugged for all environments and user friendly. Low on state saturation voltage with high switching speed is the primary concerns. In this paper selection of IGBT, module ratings and characteristics are discussed. The IGBT design topic of protection against over voltage and over current are covered. Emphasis on turn off switching, short circuit switching and necessary precautions are dealt. Selection of IGBT device, gate drive power, and its lay out considerations are covered in detail.

• Journal of Electrical Engineering and information Science
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• v.3 no.3
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• pp.366-372
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• 1998

A high efficiency interleaved active clamp forward converter with self driven synchronous rectifiers for a modular power processor is presented. To simplify the gate drive circuits, N-P MOSFETs coupled active clamp method is used. An efficiency about 90% for the load range of 50-100% is achieved. The details of design for the power stage and current mode control circuit are provided, and also some experimental results are given.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2061-2062
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• 2006

a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.939-942
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• 2002

본문의 내용은 영구자석을 사용한 단상 브러시리스 모타의 구동을 위한 H-Brdige 구동회로에 적용된 전류제어 회로에 관한 실험결과이다. 부하전류가 목표치 이상인 경우 enable 를 차단하면 순간적으로 센서저항의 전위가 0 으로 되고 이로인해 다시 순간적으로 스위칭이 이루어 지므로 매우 빠른 주기로 스위칭을 반복한다. 이 문제점을 해결하기 위하여 래칭회로를 필요로 하는데, 본 제안에서는 두 개의 NAND GATE 와 하나의 NOT GATE, 그리고 RC network 를 조합하여 LIP-FLOP 과 시지연을 이루는 방법을 실현하였다. 이와 같은 전류제어회로는 constant off time 의 특성을 가지는데, 일반적으로 사용되는 PWM 제어회로에 비하여 매우 단순하면서도, 저항부하 및 모타부하에 대해 공히 능동적으로 작동함을 입증하고 있다. 본문에서는 제안된 전류제한회로의 구조와 H-bridge 구동모드, 그리고 전기적 특성에 대한 연구결과를 설명한다.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.