• New & Renewable Energy
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• v.3 no.2 s.10
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• pp.47-52
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• 2007

Hydrate phase equilibrium for the binary $CO_{2}$+water and $CH_{4}$+water mixtures in silica gel pore of nominal 6, 30, and 100 nm were measured and compared with the cacluated results based on van der Waals and Platteeuw model. At a specific temperature three-phase hydrate-water-vapor (HLV) equilibrium curves for pore hydrates were shifted to the higher-pressure condition depending on pore sizes when compared with those of bulk hydrates. Notably, hydrate phase equilibria for the case of 100 nominal nm pore size were nearly identical with those of bulk hydrates. The activities of water in porous silica gels were modified to account for capillary effect, and the calculation results were generally in good agreement with the experimental data.

• Carbon letters
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• v.7 no.4
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• pp.271-276
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• 2006

Porous carbon materials were prepared with a thermal treatment of coal tar pitch at 550 in the Ar gas. Growth, merger, and distribution of pore were characterized with scanning electron microscopy as variation ascending temperature gradient and chamber pressure. After graphitizing at the 2600 (1 hr.), walls and connecting parts between pores were investigated with X-ray diffraction patterns. Wall thickness and pore size decreases as increasing ascending temperature gradient, and pore size becomes homogeneous. Graphite quality and thermal conductivity become higher due to the enhanced orientation of walls and connecting parts between pores.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• Carbon letters
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• v.5 no.1
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• pp.27-33
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• 2004

Structural changes of high modulus carbon fiber by oxidation in carbon dioxide gas using SEM, TEM, and XRD have been observed. It was shown that the originally high modulus carbon fiber is composed of highly ordered graphitic crystalline area and non-crystalline area. It was observed that the La increases during the whole oxidation process. It was shown that the oxidation of high modulus carbon fiber initiates at the non-crystalline area and at the ends of fiber. The large pores developed in fiber by direction of fiber length at high temperature ($1,100^{\circ}C$), and the small pores developed on the fiber surface at low temperature ($900^{\circ}C$). In conclusion, it is found that the oxidation of the carbon fiber was progressed through the imperfection.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.257-265
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• 2021

In this study, we report niobium (Nb) with hierarchical porous structure produced by a one-pot, HF-free electrochemical etching process. It is proved experimentally that a well-defined hierarchical porous structure is produced from the combination of a limited repetition of pulse etching and high concentration of aggressive anion (i.e., SO₄^2-), which results in hierarchical pores with high order over 3. A formula is derived for the surface area of porous Nb as a function of the hierarchical order of pores while the experimental surface area is estimated on the basis of the electrochemical gas evolution rate on porous Nb. From the comparison of the theoretical and experimental surface areas, an in-depth understanding was gained about porous structure produced in this work in terms of the actual pore shape and hierarchical pore order.

• Membrane Journal
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• v.6 no.2
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• pp.96-100
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• 1996

In order to improve the permeability of the homogenous membrane of poly(carbobenzoxy-L-lysin)(PCLL), which has very high selectivity of helium gas to nitrogen gas, asymmetric porous membranes of PCLL were prepared by casting from 20% solutions in dioxane and dimethylformamide(DMF), respectively. The membranes were characterized by measuring the number of the pores, the pore size distribution of the surface(the skin layer) and the thickness of the skin layer by scanning electron microscope and transmission electron microscope. The mean pore size and the pore density were lower for the membrane cast from dioxane than that from DMF, which was explained by the mechanism of the formation of the pores in the asymmetric porous membrane. The permeability coefficient observed could be roughly explained by the viscous flow through the skin layer. However, the selectivity observed was against the theory of the viscous flow.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.905-911
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• 1992

Model equations for the gas permeation through a ceramic composite membrane were derived for examining the existence of crack, the reproducibility, and the microstructural properties of composite membranes. From the results of analyzing the nitrogen permeability data through alumina-tube supported TiO2 and SiO2 composite membranes, the extent of cracking, and the formation and structure of membrane top-layers were modelled. It was proved that the crack-free and reproducible composite membranes could be easily prepared only by the pore-filled coating within pores of the support in the sol-gel coating process.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.189-198
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• 1993

A new pressurized sol-gel coating technique forming membrane layers inside pores of the porous support by the simple operation has been developed. Crack-free and reproducible nanoparticulate silica membranes supported on the porous $\alpha$-alumina tube are synthesized by pressurized coating at 600kPa for 2hr. The pore radius and N2 gas permiability at the room temperature of silica membrane layers are 8$\AA$ and 7.0$\times$10-7mol/$m^2$.s.Pa, respectively. The mechanism of N2 gas transfer through synthesized membrane layers is the perfect Knudeen flow, and the thermal stability of the silica composite membranes is excellent upto 40$0^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.1
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• pp.40-46
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• 2023

Controlled nitriding is a technology that controls the nitriding potential based on the gas partial pressure received through an IOT-based sensor. Controlled nitriding is characterized by easy control of the phase of the nitride compound and excellent reproducibility of quality. In particular, it is possible to form a compound layer of excellent quality with fewer pores on the surface. However, despite these advantages, the application of controlled nitriding still needs to be improved in Korea. This paper explains the characteristics of controlled nitriding and describes the future direction and the problems of controlled nitriding in Korea.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.46-50
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• 2012

This study was carried out to investigate the effect of welding parameters such as shielding gas compositions welding voltage and welding current on the pore formation in the weld beads of galvanized steel pipes produced with gas metal arc welding. The porosity was evaluated and rated by metallography and radiographic test in terms of weight percentage, number and distribution of pores in weld beads. The porosity increased with increasing welding voltage and current, in which Ar gas produced the most porosity while $Ar+5%O_2$ generated the least porosity. It was found that the porosity could be reduced by selection of the proper gas mixture composition such as $Ar+5%O_2$ and $Ar+10%CO_2$ and by using current (130~150A) and voltage(16~20V).