• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.204-207
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• 2016

Experimental study of UV-irradiated O₂/H₂ gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O₂/H₂ gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H₂. O₂ gas compete for UV (184.9 nm) absorption with PMMA producing O₃, O(¹D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.985-993
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• 2006

An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.429-433
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• 2014

As the fabrication technology used in FPDs(flat-panel displays) advances, the size of these panels is increasing and the pattern size is decreasing to the um range. Accordingly, a cleaning process during the FPD fabrication process is becoming more important to prevent yield reductions. The purpose of this study is to develop a FPD cleaning system and a cleaning process using a two-phase flow. The FPD cleaning system consists of two parts, one being a cleaning part which includes a two-phase flow nozzle, and the other being a drying part which includes an air-knife and a halogen lamp. To evaluate the particle removal efficiency by means of two-phase flow cleaning, silica particles $1.5{\mu}m$ in size were contaminated onto a six-inch silicon wafer and a four-inch glass wafer. We conducted cleaning processes under various conditions, i.e., DI water and nitrogen gas at different pressures, using a two-phase-flow nozzle with a gap distance between the nozzle and the substrate. The drying efficiency was also tested using the air-knife with a change in the gap distance between the air-knife and the substrate to remove the DI water which remained on the substrate after the two-phase-flow cleaning process. We obtained high efficiency in terms of particle removal as well as good drying efficiency through the optimized conditions of the two-phase-flow cleaning and air-knife processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.504-509
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• 1999

In-situ cleaning and subsequent silicon epitaxial film growth were performed in a load-locked reactor equipped with Hg-grid UV lamp and PBN heater to obtain the smooth and contaminant-free underlying surface and develop low-temperature epitaxial film growth process. The removals of organic and native oxide were investigated using UV-excited $O_2$ and $NF_{3}/H_{2}$, and the effect of the surface condition was examined on the quality of silicon epitaxial film grown at temperature as low as $750^{\circ}C$. UV-excited gas phase cleaning was found to be effective in removing the organic and native oxide successfully providing a smooth surface with RMS roughness of 0.5$\AA$ at optimal condition. Crystalline quality of epitaxial film was determined by smoothness of cleaned surface and the presence of native oxide and impurity. Crystalline defects such as dislocation loops or voids due to the surface roughness were observed by XTEM.

• Journal of Navigation and Port Research
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• v.40 no.1
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• pp.1-6
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• 2016

This study was conducted on a circulation system which can recycle waste water from EGCS(Exhaust Gas Cleaning System) using a wet scrubber that is used to treat air pollutants from ships. Though we developed a water treatment system that could remove effectively particulate matters and dispersed oil included in cleaning water for Ship Exhaust Gas Recycle System(DePM & DeSOx), we found that it is difficult to treat minutely dispersed oil only by means of centrifugal-typed purifier. Therefore, to this system, we applied a coalescer that coalesces emulsified minute oil particles in the 2nd phase of dispersion state after being filtered through the centrifugal-typed purifier. After we treated cleaning water drained out of Ship Exhaust Gas Recycle System(DePM & DeSOx) by using both purifier and coalescer, we found that particulate matters and dispersed oil were removed more than 55% and 99%, respectively, in comparison with those contained in cleaning water influent. Putting the results together, we conclude that the treated cleaning water can be recycled as normal cleaning water if this cleaning water treatment system is employed by the wet cleaning tower system for the reduction of air pollutants from ships.

• Clean Technology
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• v.5 no.1
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• pp.62-77
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• 1999

Semiconductor industry has rapidly grown because of the need from electronic and computer industries. However the global environmental regulations for various hazardous chemical compounds, which are indispensably used in semiconductor manufacturing process, are getting stronger. The semiconductor industries should develop the cleaner technologies in order to both lead the future world market and avoid the regulations form environmentally developed countries. In this paper, cleaner technologies for semiconductor cleaning processes are surveyed, such as gas phase process, UV process, and plasma process. Advantages and disadvantages of these processes are discussed.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.79-81
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• 2001

저압 기상 영역에서 Anhydrous HF 가스와 Methanol vapor를 사용하는 산화막 식각공정을 수행하기 위하여 (1) 반응기 부피의 최소화, (B) 공정압력의 최소화, (3) 고순도 알루미나 Reactor 적용, (4) Cluster화의 개념을 적용한 VPC 장치를 제작하였다. Wafer의 온도, HF의 분압 및 Working Pressure 등의 공정변수에 따른 Oxide Wafer의 식각특성의 변화를 확인하였다. 또한 Etch Uniformity를 향상시키기 위하여 Shower Head 구조를 변경시켜서 실험하였으며, CFD Simulation을 이용하여 Reactor내에서의 HF gas 및 Methanol vapor의 분율을 예측하였다.

• Journal of the Korean Society of Tobacco Science
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• v.36 no.1
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• pp.12-19
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• 2014

A matrix solid-phase dispersion (MSPD) method was developed for extracting and cleaning-up the selected agrochemicals in tobacco using gas chromatography-mass spectrometry with selected ion monitoring (GC/MS-SIM). Different parameters of the method were investigated and optimized, such as the type of solid-phase (alumina, $C_{18}$ and Florisil) and eluent (acetone, acetonitrile, ethylacetate and n-hexane). The best results were obtained using 0.5 g of tobacco sample, 1.0 g of $C_{18}$ as dispersant sorbent, 1.0 g of Florisil as clean-up sorbent and acetonitile saturated with n-hexane as eluting solvent. The method was validated using tobacco samples fortified with agrochemicals at their different concentration levels. This method gave good linearity for the selected agrochemicals of ranging from $0.01{\mu}g/mL$ to $0.1{\mu}g/mL$. Recoveries of the selected agrochemicals in tobacco were more than 80 % and reproducibilities were found to be better than 10 % RSD. Those results suggested that the analytical procedure including MSPD method in combining with GC/MS could be applicable to the rapid determination often the selected agrochemicals in tobacco.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.239-244
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• 1996

We firstly report that formation of $SiO_2$ layer on Si surface can be effectively prevented by flowing the $Si_2H_6$ gas during the heating-up procedure for amorphous Si depositions. In this way, amorphously deposited Si layer onto crystalline Si substrates can be grown epitaxially during the post-deposition heat treatments. The suppression of surface $SiO_2$ can be explained in terms of adsorption of SiHx adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing $Si_2H_6$ flowing and soild phase epitaxial growth, high-quality epitaxial Si layer can be obtained at low temperatures below $600^{\circ}C$ without conventional high temperature cleaning procedures.

• Clean Technology
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• v.18 no.4
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• pp.419-425
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• 2012

This work explored the characteristics and the photocatalytic activities of S element-doped $TiO_2$ (S-$TiO_2$) and N element-doped $TiO_2$ (N-$TiO_2$) for the decomposition of gas-phase isopropyl alcohol (IPA) at sub-ppm concentrations, using a plug-flow reactor irradiated by 8-W daylight lamp or visible light-emitting-diodes (LEDs). In addition, the generation yield of acetone during photocatalytic processes for IPA at sub-ppm levels was examined. The surface characteristics of prepared S- and N-$TiO_2$ photocatalysts were analyzed to indicate that they could be effectively activated by visible-light irradiation. Regarding both types of photocatalysts, the cleaning efficiency of IPA increased as the air flow rate (AFR) was decreased. The average cleaning efficiency determined via the S-$TiO_2$ system for the AFR of 2.0 L $min^{-1}$ was 39%, whereas it was close to 100% for the AFR of 0.1 L $min^{-1}$. Regarding the N-$TiO_2$ system, the average cleaning efficiency for the AFR of 2.0 L $min^{-1}$ was above 90%, whereas it was still close to 100% for the AFR of 0.1 L $min^{-1}$. In contrast to the cleaning efficiencies of IPA, both types of photocatalysts revealed a decreasing trend in the generation yields of acetone with decreasing the AFR. Consequently, the N-$TiO_2$ system was preferred for cleaning of sub-ppm IPA to S-$TiO_2$ system and should be operated under low AFR conditions to minimize the acetone generation. In addition, 8-W daylight lamp exhibited higher cleaning efficiency of IPA than for visible LEDs.