• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.76-79
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• 2000

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Nano
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• 제13권12호
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• pp.1850138.1-1850138.6
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• 2018

Two-dimensional (2D) or layered materials have a great potential for applications in energy storage, catalysis, optoelectronics and gas separation. Fabricating novel 2D or quasi-2D layered materials composed of relatively abundant and inexpensive atomic species is an important issue for practical usage in industry. Here, we suggest the layer-structured AlOOH (Boehmite) as a promising candidate for such applications. Boehmite is a well-known layer-structured material and a single-layer can be exfoliated from the bulk boehmite by breaking the interlayer hydrogen bonding. We study atomic and electronic band structures of both bulk and single-layer boehmite, and also obtain the single-layer exfoliation energy using first-principles calculations.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.895-898
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• 2014

The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1438-1440
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• 1998

In this work, simultaneous measur of space charge and conduction current was c out in LDPE with air gap by Pulsed-Electro-Aco Method. Also, effect of long time charging at con electric field on the formation of space charge conduction was investigated. From the experim results. we knew that the homo space charge formed near the dielectric surfaces and moving the bulk of dielectric as the electric field elevated. This was related with the deep traps b carriers and de trapping by Poole-field lowering conduction current was coincident with the Pool emission. From the long time charging experimen obtained the results that the negative space was moving into the dielectric bulk as the cha continued and the positive space charge accumulated at upper surface of LDPE.

• 전자공학회논문지A
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• 제30A권7호
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• pp.38-46
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• 1993

Based on the close correlation between the optoelectronic and electrical characteristics of laser diodes, this paper is to present an exact model for electrical characteristics of laser diodes with bulk active layers so that the optoelectronic characteristics may be estimated from the electrical Characteristics. Among the considered models, the most exact model is shown to be one which uses the Fermi-Dirac integral and the bimolecular recombination and takes into account the energy-gap shrinkage with the injected carrier density.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.442-445
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• 2006

In order to realize the commercial application of HTSC materials, it is necessary to develop the fabrication process of high Tc oxide superconductor materials with desired shape and for practical application and high critical current density as well as good mechanical strength which can withstand high lorenz force generated at high magnetic field. Much studies have been concentrated to develop the fabrication technique for high critical current density but still there are a lot of gap which should be overcome for large scale application of HTSC materials at liquid nitrogen temperature. Recently some new fabrication techniques have been developed for YBaCuO bulk superconductor with high mechanical strength and critical current density. In this project, the establishment of fabrication condition and additive effects of second elements were examined so as to improve the related properties to the practical use of YBaCuO superconductor, and we reported the production of the YBaCuO high Tc superconductor by the pyrolysis method.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.364-366
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• 2006

In order to realize the commercial application of HTSC materials, it is necessary to develop the fabrication process of high Tc oxide superconductor materials with desired shape and for practical application and high critical current density as well as good mechanical strength which can withstand high lorenz force generated at high magnetic field. Much studies have been concentrated to develop the fabrication technique for high critical current density but still there are a lot of gap which should be overcome for large scale application of HTSC materials at liquid nitrogen temperature. Recently some new fabrication techniques have been developed for YBaCuO bulk superconductor with high mechanical strength and critical current density. In this project, the establishment of fabrication condition and additive effects of second elements were examined so as to improve the related properties to the practical use of YBaCuO superconductor, and we reported the production of the YBaCuO high Tc superconductor by the pyrolysis method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.306-306
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• 2011

Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.20-21
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• 2006

In this study, structural and microwave dielectric properties of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb} cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb) ceramics prepared by conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the ${Ba_5}{Ta_4}{O_{15}}$ ceramics were increased continuously with increasing of sintering temperature. And the bulk density and dielectric constant of the ${Ba_5}{Nb_4}{O_{15}}$ ceramics was increased in $1375^{\circ}C{\sim}1400^{\circ}C$ but decerased in $1425^{\circ}C$. In the case of ${Ba_5}{Ta_4}{O_{15}}$ ceramics sintered at $1475^{\circ}C$ and ${Ba_5}{Nb_4}{O_{15}}$ ceramics sintered at $1400^{\circ}C$, The dielectric constant and quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, $-3.06\;ppm/^{\circ}C$ and, 39.55, 28,052 GHz, $5.7\;ppm/^{\circ}C$ respectively.