• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.36-46
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• 2010

In multi-GHz RF ICs and high-speed digital interfaces, ESD protection devices introduce considerable parasitic capacitance and resistance to inputs and outputs, thereby degrading the RF performance, such as input/output matching, gain, and noise figure. In this paper, the impact of ESD protection devices on the performance of RF ICs is investigated and design methodologies to minimize this impact are discussed. With RF and ESD test results, the 'RF/ESD co-design' method is discussed and compared to the conventional RF ESD protection method which focuses on minimizing the device size.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• Progress in Superconductivity and Cryogenics
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• v.14 no.1
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• pp.44-47
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• 2012

The substantial improvement of the signal-to-noise ratio (SNR) can be achieved with small-size samples or low-field MRI system by high-temperature superconducting(HTS) RF coil. The typical HTS RF coil made of HTS thin film is expensive and is limited the coil geometry to planar surface coil. In this study, commercial Bi-2223 HTS tapes was used as RF coil for a 0.35T permanent MRI system. It has advantages of both much lower cost and easier fabrication over HTS thin film coil. SNR gain of the image obtained from the HTS RF coil over a conventional Cu RF coil at room temperature was about 2.4-fold and 1.9-fold using the spin echo pulse sequence and gradient echo pulse sequence respectively.

• 전자공학회논문지 IE
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• v.47 no.1
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• pp.1-5
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• 2010

This paper presents new results of the impact of gate structure on hot-carrier-induced performance degradation in SOI low noise amplifier. Circuit simulations were carried out using the measured S-parameters of H--gate and T-gate SOI MOSFETs and Agilent's Advanced Design System (ADS) to compare the performance of H-gate LNA and T-gate LNA before and after stress. We will discuss the figure of merit for the characterization of low noise amplifier in terms of impedance matching (S11), noise figure, and gain as well as the relation between device degradation and performance degradation of LNA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.342-348
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• 2015

This paper presents a 1.9-GHz digital ${{\Delta}{\Sigma}}$ fractional-N PLL with a finite impulse response (FIR) filter embedded for noise suppression. The proposed digital implementation of FIR provides a simple method of increasing the number of taps without complicated calculation for gain matching. This work demonstrates 32 tap FIR filtering for the first time and successfully filtered the in-band phase noise generated from delta-sigma modulator (DSM). Design considerations are also addressed to find the optimum number of taps when the resolution of time-to-digital converter (TDC) is given. The PLL, fabricated in $0.11-{\mu}m$ CMOS, achieves a well-regulated in-band phase noise of less than -100 dBc/Hz for the entire range inside the bandwidth of 3 MHz. Compared with the conventional dual-modulus division, the proposed PLL shows an overall noise suppression of about 15dB both at in-band and out-of-band region.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.13 no.2
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• pp.50-56
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• 2014

This paper describes the design, fabrication, and measurement of a 4-port femtocell MIMO antenna for LTE 700MHz(Band12, 13, 14, 17, 28, 44) applications. Based on microstrip patch antenna, an impedance matching is achieved by short pin. In order to obtain sufficient bandwidth and isolation between antenna elements in a limited dimension, a cross decoupler is used. With a Voltage Standing Wave Ratio (VSWR)${\leq}2$, the measured result of the fabricated antenna provides 105MHz(0.698~0.803MHZ) bandwidth and shows the gain with 1.97dBi and isolation above 13dB. As one of the key parameters for MIMO performance evaluation, correlation coefficient of MIMO is achieved within 0.2.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.549-554
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• 2003

In this paper, we have designed and implemented by a monolithic microwave integrated circuit(MMIC) of a 5.8GHz-band low noise amplifier (LNA) composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication. The designed LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18mA, The gain at center frequency 5.8GHz is 13.4dB, NF is 1.94dB, Input IP3 is -3dBm, S$_{11}$ is -18dB, and S$_{22}$ is -13.3dB. The circuit size is 1.2 $\times$ 0.7 $\textrm{mm}^2$.>.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1096-1104
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• 2006

In this paper, the broadband antenna for the combined base station of Cellular/PCS/IMT-2000/Wibro and S-DMB services is designed and the proposed antenna allows having sufficient coverage for each service band. In order to get the broadband impedance matching, the tapered sections are applied on the both terminus of hi-conical respectively. The design parameter is calculated and simulated by using FDTD method. As a result, the measured bandwidth of the proposed antenna is $0.79GHz{\sim}2.93GHz$ and the gain is distributed from 5.5 dBi up to 8.19 dBi.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.353-358
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• 1998

This paper presents development of a LNA operating at 1.71 ∼ 1.18 GHz used for a receiver of KOREA PCS base station and transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows 30 dB in gain and 0.85 dB in noise figure.