• Title/Summary/Keyword: Gain Characteristic

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Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$ ($CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성)

  • 손정환;김동욱;홍성철;권영세
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.12
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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UWB Circular Loop Antenna with Circular Sectors (원형 섹터를 가진 UWB 원형 루프 안테나)

  • Yeo, Junho;Lee, Jong-Ig
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.12
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    • pp.2816-2822
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    • 2014
  • In this paper, a wideband loop antenna for UWB applications is studied. The structure of the proposed wideband loop antenna is a circular loop antenna with appended circular sectors to obtain an ultra-wideband characteristic. The circular sectors are used instead of conventional triangular sectors to match with the 50 ohm feed line. Optimal design parameters are obtained by analyzing the effects of the gap between the circular sectors and the radius of the circular loop on the input reflection coefficient and gain characteristics. The optimized wideband loop antenna is fabricated on an FR4 substrate with a dimension of 41 mm by 41 mm. Experiment results show that the proposed antenna has a frequency band of 3.1-11.0 GHz for a VSWR < 2.25, which assures the operation in the UWB band. Measured gain ranges 1.3-5.3 dBi in the UWB band.

Pre-distorter Method Using LUT with 2ι Partition Interpolation in the OFDM System (OFDM 시스템에서 2ι 분할 보간을 LUT에 결합한 전치왜곡기에 관한 연구)

  • 권오주;이호근;하영호
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.7A
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    • pp.668-675
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    • 2002
  • This paper proposes pre-distorter combined LUT with 2ιpartition interpolation method to reduce nonlinear distortion which was caused by high PAPR and to update LUT quickly. Pre-distorted gain and phase can be found by using LUT which consisted of AM/AM and AM/PM value, and OFDM signal amplitude. The proposed 2ιpartition interpolation can accurately find predistorted gain and phase using bit shift and add component instead of increasing size of LUT which requires increasing the amount of computation. The performance of the proposed method was measured by the difference between HPA input and output characteristics by the LUT size, constellation, SER performance by the HPA, and LUT update error by the HPA characteristic changes. As a result, it is shown that when the size of the LUT is 32 and 64 for 16-QAM and 64-QAM, nonlinear distortion nearly didn't occurred.

A BJT Structure with High-Matching Property Fabricated Using CMOS Technology (CMOS 기술을 기반으로 제작된 정합 특성이 우수한 BJT 구조)

  • Jung, Yi-Jung;Kwon, Hyuk-Min;Kwon, Sung-Kyu;Jang, Jae-Hyung;Kwak, Ho-Young;Lee, Hi-Deok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.5
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    • pp.16-21
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    • 2012
  • For CMOS based bipolar junction transistor (BJT), a novel BJT structure which has higher matching property than conventional BJT structure was proposed and analyzed. The proposed structure shows a slight decrease of collector current density, $J_C$ about 0.361% and an increase of current gain, ${\beta}$ about 0.166% compared with the conventional structure. However, the proposed structure shows a decrease of area about 10% the improvement of matching characteristics of collector current ($A_{IC}$) and current gain ($A_{\beta}$) about 45.74% and 38.73% respectively. The improved matching characteristic of proposed structure is believed to be mainly due to the decreased distance between two emitters of pair BJTs, which results in the decreased effect of deep n-well of which resistance has the higher standard deviation than the other resistances.

Dual-Band Monopole Antenna Design with Mu-Negative Metamaterial Unit Cell (Mu-Negative Metamaterial 단일 셀을 가진 듀얼 대역 모노폴 안테나 설계)

  • Lee, Sang-Jae;Lee, Young-Hun
    • Journal of IKEEE
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    • v.21 no.3
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    • pp.219-226
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    • 2017
  • This paper was studied the double-band monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700MHz and 2.45GHz band. Mu-negative unit cell made of the interdigital capacitor structure to operate a double-band antenna by inserting it into an antenna radiator unit. In addition, the parasitic conductor is implemented on the back side of the antenna radiation part, so that the resonance point of the antenna can be controlled and the bandwidth is improved. Finally, we implemented an antenna operating in the 750MHz UHD band and the 2.45GHz WiFi band. The designed antenna has a size of $200{\times}100mm^2$. Experimental results show that the 8dB bandwidth and gain characteristics at 750MHz band are 320MHz(42.7%), 5.28dB, 6dB bandwidth and gain at 2.45GH are 540MHz (21.6%), -0.46dB. From the experimental results, we confirmed that the resonance point with theoretical value is in agreement with experimental value, and the radiation patterns are have the omnidirectional characteristic in both bands.

Characteristic as a Resonance Frequency of $SF_6$ Gas (SF6 가스중의 공진주파수에 따른 신호특성)

  • Lee, Y.H.;Lee, H.D.;Park, J.N.;Shin, Y.S.;Park, J.S.;Seo, J.M.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1867-1869
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    • 2003
  • In this paper, chamber(Circuit breaker compartment of C-GIS) made of stainless steel with 4 mm width is used. Artificial defect was made on enclosure or HV conductor of chamber and $SF_6$ gas was injected into it according to pressure. In this experiment, Acoustic emission sensors of different types was used to compare sensitivity to detect acoustic signal occurred by Partial discharge(PD) of according to types and resonance frequency in $SF_6$ gas atmosphere. Sensors used in tests was R6I, R15I and 2/4/6 Pre-Amplifier connected with R6IU without pre. amp. In case of R6IU, gain was adjusted with 40 dB like other sensors and operated by differential mode. Post amplifier(post. amp) and band pass filter(BPF) were developed Gain of post. amp. is 60 dB and BPF has band width of $50{\sim}300$ kHz. Also, envelope circuit developed reduces frequency of AE sensor. As a result, in $SF_6$ atmosphere, R6IU and R6I had resonance frequency of 60 Hz was better than R15I. Also, R6IU was better than R6I because of type property of pre.amp. had differential mode.

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Design of Double Bond Down Converting Mixer Using Embeded Balun Type (발룬 내장형 이중대역 하향 변환 믹서 설계 및 제작)

  • Lee, Byung-Sun;Roh, Hee-Jung;Seo, Choon-Weon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.141-147
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    • 2008
  • This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

Analysis and Design of a Multi-resonant Converter with a Wide Output Voltage Range for EV Charger Applications

  • Sun, Wenjin;Jin, Xiang;Zhang, Li;Hu, Haibing;Xing, Yan
    • Journal of Power Electronics
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    • v.17 no.4
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    • pp.849-859
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    • 2017
  • This paper illustrates the analysis and design of a multi-resonant converter applied to an electric vehicle (EV) charger. Thanks to the notch resonant characteristic, the multi-resonant converter achieve soft switching and operate with a narrowed switching frequency range even with a wide output voltage range. These advantages make it suitable for battery charging applications. With two more resonant elements, the design of the chosen converter is more complex than the conventional LLC resonant converter. However, there is not a distinct design outline for the multi-resonant converters in existing articles. According to the analysis in this paper, the normalized notch frequency $f_{r2n}$ and the second series resonant frequency $f_{r3n}$ are more sensitive to the notch capacitor ratio q than the notch inductor ratio k. Then resonant capacitors should be well-designed before the other resonant elements. The peak gain of the converter depends mainly on the magnetizing inductor ratio $L_n$ and the normalized load Q. And it requires a smaller $L_n$ and Q to provide a sufficient voltage gain $M_{max}$ at ($V_{o\_max}$, $P_{o\_max}$). However, the primary current increases with $(L_nQ)^{-1}$, and results in a low efficiency. Then a detailed design procedure for the multi-resonant converter has been provided. A 3.3kW prototype with an output voltage range of 50V to 500V dc and a peak efficiency of 97.3 % is built to verify the design and effectiveness of the converter.

A Study on Steady State Characteristics of LLC Resonant Half Bridge Converter Considering Internal Losses (내부 손실이 고려된 LLC 공진형 하프브릿지 컨버터의 정상상태 특성에 관한 연구)

  • Ahn, Tae-Young
    • Journal of IKEEE
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    • v.22 no.4
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    • pp.985-991
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    • 2018
  • In this paper, an equivalent circuit reflecting the internal loss of the LLC resonant half bridge converter was proposed and a steady state characteristic equation including the loss factors was derived. Using the results, the frequency characteristics of I/O voltage gain and input impedance were compared with the lossless model In order to verify the proposed model and the derived equation, the main components of the 1kW class LLC resonant half bridge converter were selected under the same conditions and the steady state characteristics such as voltage gain and input impedance were compared. In particular, to compare more closely the steady state error of the two models, we observed the change in switching frequency with respect to the load current, which is considered to be the most important in the actual circuit design stage. As a result, it is confirmed that the error of the operating frequency is significantly improved from the proposed model and the analysis result.

Minimal clinically important difference of mouth opening in oral submucous fibrosis patients: a retrospective study

  • Kaur, Amanjot;Rustagi, Neeti;Ganesan, Aparna;PM, Nihadha;Kumar, Pravin;Chaudhry, Kirti
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.48 no.3
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    • pp.167-173
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    • 2022
  • Objectives: The purpose of this study was to estimate the minimal clinically important difference (MCID) of mouth opening (MO) and patient satisfaction in surgically treated oral submucous fibrosis (OSMF) patients. Materials and Methods: The status of MO was collected preoperatively (T0), postoperatively at 3 months (T1), and at a minimum of 6 months postoperatively (T2). MCID was determined through the anchor-based approach with the change difference method, mean change method, and receiver operator characteristic curve (ROC) method. Results: In this study, 35 patients enrolled and completed postoperative follow-up (T2) averaging a duration of 18.1 months. At T1, using the change difference method, MO was 14.89 mm and the ROC curve exhibited a 11.5 gain in MO (sensitivity 81.8% and specificity 100%, area under the curve [AUC] of 0.902) and was classified as MCID as reported by patients. At T2, MCID of MO was 9.75 mm using the change difference method and 11.75 mm by the mean change method. The ROC curve revealed that the MCID of MO at T2 was 10.5 mm with 73.9% sensitivity and 83.3% specificity (AUC of 0.873). The kappa value was 0.91, confirming reliability of the data. Conclusion: This study demonstrated MCID values that indicate the clinical relevance of surgical treatment of OSMF if the minimum possible gain in MO is approximately 10 mm.