• Journal of the Korean Operations Research and Management Science Society
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• 제21권1호
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• pp.147-161
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• 1996

Generally the Multiprocessor Scheduling (MPS) problem is difficult to solve because of the precedence of the tasks, and it takes a lot of time to obtain its optimal solution. Though Genetic Algorithm (GA) does not guarantee the optimal solution, it is practical and effective to solve the MPS problem in a reasonable time. The algorithm developed in this research consists of a improved GA and GP/MISF (Critical Path/Most Immediate Successors First). An efficient genetic operator is derived to make GA more efficient. It runs parallel CP/MISF with GA to complement the faults of GA. The solution by the developed algorithm is compared with that of CP/MISF, and the better is taken as a final solution. As a result of comparative analysis by using numerical examples, although this algorithm does not guarantee the optimal solution, it can obtain an approximate solution that is much closer to the optimal solution than the existing GA's.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 한국경영과학회 1995년도 추계학술대회발표논문집; 서울대학교, 서울; 30 Sep. 1995
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• pp.220-229
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• 1995

Generally the Multiprocessor Scheduling(MPS) problem is difficult to solve because of the precedence of the tasks, and it takes a lot of time to obtain its optimal solution. Though Genetic Algorithm(GA) does not guarantee the optimal solution, it is practical and effective to solve the MPS problem in a reasonable time. The algorithm developed in this research consists of a improved GA and CP/MISF(Critical Path/Most Immediate Successors First). A new genetic operator is derived to make GA more efficient. It runs parallel CP/MISF with Ga to complement the faults of GA. The solution by the developed algorithm is compared with that of CP/MISF, and the better is taken as a final solution. As a result of comparative analysis by using numerical examples, although this algorithm does not guarantee the optimal solution, it can obtain an approximate solution that is much closer to the optimal solution than the existing GA's.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.239-244
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• 2002

Even though, tanks are used at the many industry plants, it is very difficult to control the tank level without any overflow and shortage; moreover, cause of its complication of dynamics and nonlinearity, it's impossible to realize the accurate control using the mathematical model which can be applied to the various operation modes. However, the sliding mode controller(SMC) is known as having the robust variable structures for the nonlinear control systems with the parametric perturbations and with the sudden disturbances, but the auto-tuning of parameters was a problem. Therefore, in this paper, a Genetic Algorithm based Sliding Mode Controller (GA-SMC) for the precise control of the coupled tank level was tried. GA optimized the SMCs switching parameters easily and rapidly. The simulation results are shown that the tank level could be satisfactorily controlled with less overshoot and steady-stale error by the proposed GA-SMC.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.125-135
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• 2009

An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

• Journal of the Korean Vacuum Society
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• 제12권S1호
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제30A권1호
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Journal of Korean Society of Industrial and Systems Engineering
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• 제22권53호
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• pp.37-44
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• 1999

The problem to be studied here is the minimization of the total travel distance and the number of vehicles used for delivering goods to customers. Vehicle routes must also satisfy a variety of constraints such as fixed vehicle capacity, allowed operating time. Genetic algorithm to solve the VRPTW with heterogeneous fleet is presented. The chromosome of the proposed GA in this study has the 3-dimension. We propose GA that has the cubic-chromosome for VRPTW with heterogeneous fleet. The newly suggested ‘Cubic-GA (or 3-D GA)’ in this paper means the 2-D GA with GLS(Genetic Local Search) algorithms and is quite flexible. To evaluate the performance of the algorithm, we apply it to the Solomon's VRPTW instances. It produces a set of good routes and the reasonable number of vehicles.

• Journal of the Korean Vacuum Society
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• 제12권S1호
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• pp.104-106
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• 2003

In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.