• Korean Journal of Materials Research
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• v.10 no.10
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• pp.698-702
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• 2000

The characteristics of optical absorption in $Al_{0.24}Ga_{0.76}As/GaAs$ multi-quantum wells(MQWs) structure were investigated by using the surface photovoltage(SPV). The Spy features near 1.42 eV showed two overlapping signals. By chemical etching, we found associated with the GaAs substrate and the GaAs cap layer. The Al composition(x=24 %) was determined by Kuech's composition formula. In order to identify the transition energies. the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum wells An amplitude variation of the relative Spy intensity from the GaAs substrate, llH, and llL was observed at different light intensities. A variation in the SPY line shape of the transition energies were observed with decreasing tempera­t ture.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Journal of the Korean Chemical Society
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• v.47 no.4
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• pp.370-375
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• 2003

$BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors were chosen to produce blue, green, and red emissions, respectively, under excitation from a violet light emitting diode (LED). A four-band white LED was obtained by a combination of nonabsorbed violet emission from a violet LED and blue, green, and red emissions from $BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors. The luminescent properties of the four-band white LED were also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.374-374
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• 2011

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 일반적으로 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al의 구조로 제작된다. 태양전지는 p형과 n형 반도체의 접합에 의해서 동작을 하게 되며, CIGS 박막 태양전지에서는 p형으로 CIGS 박막과 n형으로 CdS 박막이 사용된다. CIGS 박막태양전지에서는 p형과 n형이 서로 다른 물질로 이루어진 이종접합을 이루게 되고, 계면에서의 밴드가 어떻게 형성이 되느냐에 따라 태양전지 성능에 영향을 미치게 된다. p형의 CIGS 박막은 주로 다단계 증발법에 의해 형성되고 3단계 공정조건에 의해 계면의 특성에 많은 영향을 미치게 된다. n형의 CdS 박막은 주로 chemical bath deposition (CBD) 법에 의해 제작된다. 이렇게 제작되는 CBD-CdS는 시약의 농도, pH (수소이온농도), 박막 형성시의 온도 등의 조건에 따라 특성이 변하게 된다. 본 논문에서는 3단계 공정시간을 변화시켜 제작된 CIGS 박막 위에 CBD-CdS 증착 조건 중 thiourea 의 농도를 변화시켜 CIGS 태양전지를 제작하고 그에 따른 특성을 살펴보았다. CIGS 박막은 3단계 공정시간을 490초와 360초로 하여 제작하였고, CdS 박막은 thiourea 농도를 각각 0.025 M과 0.05 M, 0.074 M, 0.1 M로 변화시켜가며 제작하였다. 제작된 CIGS 박막 태양전지는 CIGS 3단계 공정시간과 thiourea의 조건에 따라 최고 15.81%, 최저 14.13%로 나타내었다. 또한, 외부양자효율을 측정하여 제작된 CIGS 박막 태양전지의 파장에 따른 특성을 비교하였다.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.177-182
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• 1997

금속연료가 연소할 때 발생하는 Fission Gas는 주로 직경방향으로의 Swelling을 일으켜 낮은 연소도의 원인이 되어 왔다. 따라서 본 연구에서는 높은 연소도를 갖는 금속연료의 개발을 목적으로 Fission Gas가 Plenum으로 쉽게 방출하는 조직인 Laminar Structure를 갖는 합금의 설계를 연구하였다. 또한 조사 후의 조직안정성을 예측하기 위해 열처리 후의 미세조직의 변화를 관찰하여 조직안정성을 시험하였다. U-10wt.%Zr 합금 중 Zr 원소 대신에 2wt.% 및 3wt.%의 W 또는 Mo을 첨가한 합금을 제조하여 합금원소 첨가의 영향에 따른 미세조직의 변화를 조사하였다. 그 결과 모든 조성의 합금은 Matrix에 있어서 Laminar Structure를 나타내었다. 또한 U-10wt.%Zr에 비해 2wt.% 및 3wt.%W의 W 또는 Mo를 첨가한 합금의 lamina Thickness가 철면 미세해짐을 확인하였다. 특히 U-7wt.%Zr-3wt.%W의 경우는 U-10wt.Zr에 비해 Laminar Thickness가 1/2배까지 감소되었다. 합금원소(W, Mo) 첨가에 의한 Laminar Thickness의 감소는 Fission Gas의 Inter-connected Path가 보다 잘 형성되게 하여 Gas의 방출속도를 증가시켜 Swelling을 감소시킬 것으로 생각된다. 열처리한 금속연료의 미세조직을 비교한 결과를 보면 합금원소(W, Mo)를 첨가한 합금을 50$0^{\circ}C$에서 1000시간동안 열처리한 것을 U-Zr 2원계 합금을 열처리한 것과 비교했을 때 약 1/3배 정도의 Laminar Thickness를 유지하는 것으로 보아 합금원소를 첨가하면 조사 후의 조직안정성에도 크게 기여할 것으로 기대된다.

• Korean Journal of Environmental Agriculture
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• v.32 no.4
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• pp.343-347
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• 2013

BACKGROUND: Control of alternate bearing satsuma mandarin in Jeju is very important to maintain the optimum price of fruit and get the sustainable income of farmers. Unlike orange, Satsuma mandarin is well known to sensitive on alternate bearing. We carried out the experiment to know the effect of foliar application of $GA_3$ on the flowering and fruit quality of satsuma mandarin (C. unshiu Marc. cv. Miyagawa). METHODS AND RESULTS: To experiment, the treatments consist of control, different concentration of $GA_3$ (25, 50 and 100 mg/L), machine oil emulsion 100 times and mixture of various concentration of $GA_3$ (25 and 50 mg/L) with machine oil emulsion 100 times which it was applied on 15 year-old Miyagawa satsuma mandarin at December 29, 2011. Foliar application of $GA_3$ in winter reduced the flowering of satsuma mandarin. Flower-leaf ratio was significantly reduced at 100 mg/L $GA_3$, while no differences observed in low concentration of $GA_3$ (25 and 50 mg/L). However, it was significantly decreased to 0.19 in application of $GA_3$ 25 and 50 mg/L with machine oil emulsion 100 times mixture. Number of leaves per fruit was significantly increased as foliar application of $GA_3$ also it reduced the fruits remarkably. Soluble solid contents and Hunter's a of peel color ratio showed no difference among $GA_3$ single treatments, but it was reduced in $GA_3$ 25 and 50 mg/L with machine oil emulsion 100 times mixtures significantly. From the results, it has been found that higher $GA_3$ concentration can reduce the number of flowers on the alternate bearing of satsuma mandarin. However, it was found that lower concentration of $GA_3$ with machine oil emulsion mixture 100 times can reduce flowering. CONCLUSION(S): The foliar application of $GA_3$ (100 mg/L) can alleviate alternate beraring. Also, mixture of lower concentration of $GA_3$ with machine oil emulsion 100 times can retard flowering more significantly while it needs further confirmation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.352-358
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• 2002

The variations of the properties of Sr and Mg added $LaGaO_3$ system electrolyte with the amount of the additive and the sintering condition were studied. Main phase was (La$_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$ phase for each compositions and the single phases $(La_{0.85}Sr_{0.15})(Ga_{0.85}Mg_{0.15})O_{3-\delta},(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O{3-\delta}$ were obtained with the decrease in the sintering temperature and Mg addition. Thermal expansion coefficient of the $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ decreased with the increase in the sintering temperature. Electric conductivity of electrolyte sintered at $1500^{circ}C$ for 1h was 0.14 S/cm at $800^{circ}C$ with 1 mA.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Journal of Intelligence and Information Systems
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• v.13 no.3
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• pp.63-82
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• 2007

In this paper, we propose an adaptive hybrid genetic algorithm (ahGA) approach for effectively solving multistage-based scheduling problems in flexible manufacturing system (FMS) environment. The proposed ahGA uses a neighborhood search technique for local search and an adaptive scheme for regulation of GA parameters in order to improve the solution of FMS scheduling problem and to enhance the performance of genetic search process, respectively. In numerical experiment, we present two types of multistage-based scheduling problems to compare the performances of the proposed ahGA with conventional competing algorithms. Experimental results show that the proposed ahGA outperforms the conventional algorithms.