• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1139-1147
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• 2011

In this paper, a design and fabrication of GaN power amplifier for the S-band frequency (400 MHz bandwidth) are presented. A combining path using ${\lambda}$/4 transmission line is implemented for GaN pallet amp. Both the combiner with suspended-type transmission structure for low-loss and the suspended stripline coupler with aperture coupling for auto gain control are realized for achieving high-power high-efficiency amplifier. Proposed power amplifier demonstrated a 5 kW peak output power, 27.8 % efficiency, 67 dB gain without ALC and a 4 kW peak output power, 25.5 % efficiency, 0.1 dB droop at 200 usec pulse width and 10 % duty with ALC.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• Food Science and Preservation
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• v.21 no.6
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• pp.903-907
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• 2014

For the selection of a starter for vinegar, six strains of acetic-acid bacteria were isolated from traditional Korean vinegar fermented through the static method. These strains were investigated for their acetic-acid fermentation and identification characteristics. The 16S rRNA sequences of six strains were identified as Acetobacter pasteurianus, A. malorum, Gluconacetobacter entanii, Ga. intermedius, and Ga. xylinus respectively. The overoxidation of acetic acid, acetic-acid and pH tolerances, and acetic-acid production of these strains were investigated. None seemed to have been overoxidized. The Gluconacetobacter genus showed acetic-acid tolerance. Among the acetic-acid bacteria, A. malorum V5-7 exhibited the highest pH tolerance. The Ga. intermedius V11-5 and Ga. xylinus V8-1 strains produced colloids that exopolysaccharides of fiber. The acetic-acid production by isolated acetic-acid bacteria and type strain was a achieved at a shaking culture at $30^{\circ}C$ for 5 days. A. malorum V5-7, A. pasteurianus Gam2, and Ga. intermedius V11-5 exhibited the highest acetic acid production. The study results indicate that appropriate strains of acetic-acid bacteria improved the thraditional Korean vinegar fermented through the static method.

• Korean Journal of Plant Resources
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• v.27 no.4
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• pp.365-370
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• 2014

This study was conducted to determine the effects of seed storage methods ($-20^{\circ}C$, stratification, $2^{\circ}C$ dry, $2^{\circ}C$ wet and room temperature) and $GA_3$ application (control, $dH_2O$, 10, 100, 1000 ppm) on seed germination and seedling growth of S. lyratum. As a result seed germination rate of S. lyratum was the highest at 91% when seeds were stored at room temperature and then soaked for 24 hours in $GA_3$ 10 ppm. And seedlings of S. lyratum showed the best quality when seed were stored at $2^{\circ}C$ dry and then soaked for 24 hours in $GA_3$ 1000 ppm, with the growth characteristics of plant height (47 mm), number of leaves (8), leaf width (12 mm), leaf length (19 mm), fresh weight (aerial/root part; 471/476 mg), dry weight (aerial/root; 106/41 mg) and seedling quality indices (106). Therefore, S. lyratum seed were stored at $2^{\circ}C$ dry, and then soaked for 24 hours in $GA_3$ 1000 ppm, seed germination rate was more than 80% and production of superior quality container seedlings.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.209-215
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• 2006

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.25-29
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• 2021

This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga₂O₃ crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga₂O₃ epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga₂O₃ epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.

• Korean Journal of Environmental Agriculture
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• v.16 no.4
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• pp.327-332
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• 1997

This study was conducted to find out the effect for removal of $NH_3$ gas, one of the offensive odor. The removal efficiencies of $NH_3$ gas through zeolie column increased with the decreased percolation velocity. The effect of zeolite colum in removing $NH_3$ gas was influenced by the water content of zeolite and the added amount of zeolite, but was not influenced by the setting method of zeolite. The $NH_3$ gas removing sequence of saturated cation species on zeolite was in order of Ca->Na->$NH_4$ ->Natural->K-zeolite. Consequently the effect of zeolite on $NH_3$ gas removal efficiency is consided by the water content, added amount and saturated cation of the zeolite.

• The Korean Journal of Nuclear Medicine
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• v.26 no.2
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• pp.355-359
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• 1992

The $^{67}Ga$ has somewhat long physical and biological half livies with 78 hours and 600 hours respectively, so we can get $^{67}Ga-scan$ images for 3 or more days after once injection of $^{67}Ga$. Furthermore $^{67}Ga$ scan would be useful to search some residual tumors after surgical removal of the tumors trapped with $^{67}Ga$. However $^{67}Ga$ bound with plasma proteins would be delayed in plasma clearance as approximately 10% of the dose remains in the plasma at 24 hours. If the remained $^{67}Ga$ in the plasma is redistributed into the surgical wound, we wouldn't evaluate the degree of the tumor remained after surgery. So the authors examined the amounts of the remained blood $^{67}Ga$ and the redistribution of the blood $^{67}Ga$ into the artificial wound with S or more centimeters in the diameter at the neck and chest of the rabbits. The results were as follows; 1) The $^{67}Ga$ remained in the plasma were 12%, 5.7%, 4.2% at 24, 48 and 72 hours after $^{67}Ga$ injection respectively. 2) The blood $^{67}Ga$ were redistributed into the artificial wound with 5.9% at 48 hours and 6.9% at 72 hours after $^{67}Ga$ injection.