Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Characterization of Alpha-Ga2O3 Epilayers Grown on Ni-Pd and Carbon-Nanotube Based Nanoalloys via Halide Vapor Phase Epitaxy

Ni-Pd-CNT Nanoalloys에서 성장한 α-Ga2O3의 특성분석

  • Cha, An-Na (Department of Chemical Engineering, Chonnam National University) ;
  • Lee, Gieop (Department of Chemical Engineering, Chonnam National University) ;
  • Kim, Hyunggu (Department of Chemical Engineering, Chonnam National University) ;
  • Seong, Chaewon (Department of Chemical Engineering, Chonnam National University) ;
  • Bae, Hyojung (Optoelectronics Convergence Research Center, Chonnam National University) ;
  • Rho, Hokyun (Energy Convergence Core-Facility, Chonnam National University) ;
  • Burungale, Vishal Vilas (Department of Chemical Engineering, Chonnam National University) ;
  • Ha, Jun-Seok (Department of Chemical Engineering, Chonnam National University)
  • 차안나 (전남대학교 화학공학과) ;
  • 이기업 (전남대학교 화학공학과) ;
  • 김형구 (전남대학교 화학공학과) ;
  • 성채원 (전남대학교 화학공학과) ;
  • 배효정 (전남대학교 광전자융합기술연구소) ;
  • 노호균 (전남대학교 에너지융복합전문핵심연구지원센터) ;
  • ;
  • 하준석 (전남대학교 화학공학과)
  • Received : 2021.11.18
  • Accepted : 2021.11.24
  • Published : 2021.12.30
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Abstract

This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga2O3 crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga2O3 epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga2O3 epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.

본 연구에서는 HVPE 방법을 사용하여 Ni-Pd and Carbon-Nanotube nanoalloys (Ni-Pd-CNT) 위에 α-Ga2O3을 성장시켜 Ni-Pd-CNT에 따른 효과를 확인하였다. 그 결과, 무전해 Ni 도금 시간 40초에서 성장한 α-Ga2O3 에피층의 두께는 11 ㎛로 확인되었다. 또한, α-Ga2O3 에피층의 표면 형태는 균열 발생 없이 기판에 대한 우수한 접착력을 보여주었다. 결과적으로, 성장과정에서 발생한 수평 성장에 의해 α-Ga2O3 대의 비대칭면인 ($10{\bar{1}}4$) FWMH 값을 크게 감소할 수 있었다.

Keywords

Acknowledgement

본 연구는 교육부의 재원으로 한국기초과학지원연구원 국가연구시설장비진흥센터의 지원을 받은 기초과학연구역량강화사업 핵심연구지원센터 조성 지원 과제에서 에너지 융복합 전문핵심 연구지원센터를 조성하여(2019R1A6C1010024) 수행된 연구결과임.

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