• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.624-630
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

• Structural Engineering and Mechanics
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• v.74 no.5
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• pp.611-633
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• 2020

In this paper, a comprehensive review of nanostructures that exhibit piezoelectric behavior on all mechanical, buckling, vibrational, thermal and electrical properties is presented. It is firstly explained vast application of materials with their piezoelectric property and also introduction of other properties. Initially, more application of material which have piezoelectric property is introduced. Zinc oxide (ZnO), boron nitride (BN) and gallium nitride (GaN) respectively, are more application of piezoelectric materials. The nonlocal elasticity theory and piezoelectric constitutive relations are demonstrated to evaluate problems and analyses. Three different approaches consisting of atomistic modeling, continuum modeling and nano-scale continuum modeling in the investigation atomistic simulation of piezoelectric nanostructures are explained. Focusing on piezoelectric behavior, investigation of analyses is performed on fields of surface and small scale effects, buckling, vibration and wave propagation. Different investigations are available in literature focusing on the synthesis, applications and mechanical behaviors of piezoelectric nanostructures. In the study of vibration behavior, researches are studied on fields of linear and nonlinear, longitudinal and transverse, free and forced vibrations. This paper is intended to provide an introduction of the development of the piezoelectric nanostructures. The key issue is a very good understanding of mechanical and electrical behaviors and characteristics of piezoelectric structures to employ in electromechanical systems.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.23.1-23.1
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• 2009

Transparent thin film transistor(TTFT)는 기존의 디스플레이가 가지고 있는 공간적, 시각적 제약을 해소하는 것이 가능하며, 이는 디스플레이 산업 및 기술이 지향하는 대면적, 저가격, 공정의 단순함을 해결해 줄 수 있기 때문에 최근 TTFT에 관한 연구가 급증하고 있다. 산화물 기반의 TFT는 유리, 금속, 플라스틱 등등 그 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 산화물을 기반으로 하는 TFT 연구가 많이 이루어지고 있다. 현재 TTFT 물질로 많이 연구되고 있는 산화물은 ZnO(3.4 eV)나 $InO_x$(3.6 eV), $GaO_x$(4.9 eV), $SnO_x$(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있다. 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, amorphous ZnO 기반의 TFT의 경우 소자의 안정성이 떨어지는 것으로 보고되고 있다. 따라서 본 연구에서는 ZnO 보다 넓은 bandgap energy를 가질 수 있으며, n-type 특성을 보이고, amorphous 구조로 제작 가능한 IGZO 물질을 사용하여 RF magnetron sputtering 방법으로 박막 증착 온도의 변화를 주어 증착하였고, 증착된 IGZO 박막의 열처리를 통해 이에 따른 특성 변화를 분석하였다. Field emission scanning electron microscope(FESEM)와 surface profiler를 이용하여 IGZO 박막의 표면의 형상과 두께를 확인하였으며, x-ray diffraction(XRD) 분석을 통해 박막의 결정학적 특성을 관찰하였다. TTFT 물질로서 IGZO 박막의 적합성 여부를 확인하기 위하여 TFT를 만든 후 I-V를 측정하였으며, UV-vis를 이용하여 IGZO 박막의 투과율을 분석하여 TTFT로의 응용 가능성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.163-164
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex properties respectively. Therefore, finding optimal process conditions are very difficult and need to do many experiments. To predict ZnO deposition result, neural network was used. To gather training data, Si, GaAs, and Glass were used for substrates, and substrate temperature, work pressure, RF power were $50-500^{\circ}C$, 15 mTorr, and 180-210 W respectively, and the purity of target was ZnO 4N. For predicting the result of ZnO deposition process exactly, sensitivity analysis and drawing a response surface was added. The temperature of substrate was evaluated as a most important variable. As a result, neural network could verify the nonlinear and complex relations of variables and find the optimal process condition for good quality ZnO thin films.

• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2006.03a
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• pp.56-63
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• 2006

Facilities of 76skV Substation(S/S) play an important role in electric power supply grids. Various power facilities of 765kV S/S might be damaged enormously if a strong earthquake occurs. In an effort to mitigate possible earthquake disasters, KEPRI (Korea Electric Power Research Institute) set forth plans to verify seismic safety of the facilities of 765kV S/S. To accomplish the task, an earthquake monitoring systems is constructed at four 765kV S/S sites(Shin-AnSung, Shin-TaeBaek, Shin-SeoSan and Shin-GaPyung). Data from these earthquake monitoring stations are being transmitted via satellite communication. Currently, KEPRI is operating an earthquake monitoring system in freefield of Shin-SeoSan S/S (NSS) tentatively, Also, the data from NSS is preliminarily analyzed using the horizontal to vertical (H/V) spectrum ratio method. The method of H/V spectrum ratio has been used to infer site amplification without previous knowledge of near surface geology. The results of data analysis shorts good S/N ratio and amplification of 20-25 Hz by site effect. In the near future, the accumulated data is expected to provide a basis for assessing and predicting any damages to integrity of 765kV S/S facilities by earthquakes.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.2-2
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• 1999

금속재료의 표면 특성을 높이기 위해서 여러 표면처리 방법들이 사용되어져 오고 있다. 그 중 용사법에 의한 코팅방법이 최근의 현저한 기술적인 진보와 새로운 용사재료의 개발 등에 의해 여러 분야에 널리 응흉되고 있다. 일반적으로 이 용사법에 의한 코팅층은 다리, 선박 등의 대형 구조물에 대한 내식성 향상뿐만 아니라 자동차 및 항공기 부품, 핵 반응기 등의 코팅부에 널리 이용되고 였다. 특히 해수분위기에서 주로 사용되는 설비의 내식성을 향상시킬 목적으로 사용되 는 알루마늄 및 아연 합금의 용사 코팅층은 대부분의 경우 건조한 분위기보다는 수분이 많은 수용액 환경 하에서 사용되므로, 사용 환경 중에서 용사피막의 내식성을 조사하는 연구가 요구되고 있다. 사용되는 환경하에서의 침지시험에 의한 방법도 중요하지만, 가속화된 전기화학측정에 의한 방법 또한 이용된다. 열용사법에 의한 코팅층의 전기화학적 특성을 알아보기 위해서 3.5 % NaCI 수용액 내에서 AI 5 5083 모재와 Al-2%Zn 합금의 용사 코팅층 각각에 대한, 그리고 AI 5083 모재 위 AI-2%Zn 용사층이 코팅된 경우에 대한 분극거동과 침지시간에 따른 부식전위 및 분극저항성의 특성변화, 표면의 임피던스특성 변화 등을 측정하였다. 이 결과 모재에 대한 코팅층의 희생양극성올 판단할 수 있고, 모재/코팅 사스템의 분극거동은 혼성전위이론(mixed-potential theory)에 의해 결정되었다. 용사 코팅층이 박리되어 모재가 일부 드러난 경우를 모사한 시험편올 제작하고, 시험편 표면의 각 위치에 따라 부식전위 분포를 측정하였다. 그리고 측정 데이터를 기초로 표면의 상태변화를 모사하여 용사코팅에 의한 표면에서의 방식전위분포를 시율레이션하였다. 이와 같은 표면에서의 방식전위분포 해석을 통하여, 코팅층의 희생양극성에 의한 모재의 방식범위를 판단할 수 있다.의 비저 항을 갖는 철 박막에서도 99.9% 순도의 철을 타켓으로 하여 증착된 막은 일반 저탄소 강을 타켓으로 하여 증착된 막보다 훨씬 낮은 부식속도를 보였다.TEX>$He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다. 저지능 등을 평가하여 각 실험결과를 비교분석하여 보았다. 수록 민감하여 304 의 IGSCC 와 매우 유사한 거동을 보인다. 본 강연에서는 304 와 600 의 고온 물에서 일어나는 IGSCC 민감도에 미치는 환경, 예민화처리, 합금원소의 영향을 고찰하고 이에 대한 최근의 연구 동향과 방식 방법을 다룬다.다.의 목적과 지식)보다 미학적 경험에 주는 영향이 큰 것으로 나타났으며, 모든 사람들에게 비슷한 미학적 경험을 발생시키는 것 이 밝혀졌다. 다시 말하면 모든 사람들은 그들의 문화적인 국적과 사회적 인 직업의 차이, 목적의 차이, 또한 환경의 의미의 차이에 상관없이 아름다 운 경관(High-beauty landscape)을 주거지나 나들이 장소로서 선호했으며, 아름답다고 평가했다. 반면에, 사람들이 갖고 있는 문화의 차이, 직업의 차 이, 목적의 차이, 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에도 $\ulcorner$순응$\lrcorne

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of Animal Reproduction and Biotechnology
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• v.35 no.2
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• pp.177-182
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• 2020

The present study aimed to investigate the conceptus-related changes during early pregnancy in the Black Bengal breed of goat. A total of 22 gravid genitalia of the Black Bengal goats were collected from local slaughterhouses. The crown-rump lengths (CRL) of the conceptuses were determined to estimate the gestational age (GA). The length and diameter of uterine horn and amniotic sac were measured, and volume of amniotic and allantoic fluid formed by individual conceptus were recorded. The results reveal that the CRL is positively correlated with GA of the conceptus (R² = 0.89, p < 0.05); however, CRL was not influenced by number of conceptus. Both the left and the right uterine horn gradually increased in size with the advancement of pregnancy irrespective of conceptus number present in the horn. The size of the amniotic sac of conceptus gradually increased with the conceptus age but maintained spherical shape from 5 to 7 weeks of pregnancy. The amniotic fluid formed by individual conceptus rapidly increased from 5 weeks (3.4 ± 0.3 mL) to 7 weeks (21.0 ± 2.0 mL) and 9 weeks (111.5 ± 4.0 mL). The volume of allantoic fluid formed by individual conceptus was steadily increased until 7 weeks (60.0 ± 5.0 mL) and began to decline slowly thereafter (50.0 ± 5.0 mL at 9 weeks). Notably, there was no effect of conceptus number per pregnancy on individual amniotic and allantoic fluid volume. The cotyledons have first appeared on the allanto-chorionic surface from 4 to 5 weeks of pregnancy. The closed eye, nostril and hooves of the conceptus became visible at 7 weeks of pregnancy. The present study has shown the basic information on conceptus-related developmental changes during early pregnancy up to 9 weeks in Black Bengal goat.