• 한국진공학회지
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• 제20권4호
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• pp.288-293
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• 2011

본 논문은 InGaN/GaN 다중양자우물 구조를 가지는 녹색 발광다이오드의 활성층 내 인듐(In) 조성비와 piezoelectric field에 대한 전계 흡수 현상을 연구하였다. 활성층 내 결정학적 성질과 In 조성비는 double crystal X-ray diffraction 측정으로 분석하였으며, $1{\times}1\;mm^2$ 대면적 칩을 제작하여 발광특성을 조사하였다. 또한, 활성층 내 piezoelectric field는 electro-reflectance spectroscopy로부터 측정한 compensation voltage를 이용해 계산하였고, 인가전압에 따른 photocurrent의 변화를 측정함으로써 녹색 발광 소자의 전기 광학적 특성을 분석하였다.

• 한국조명전기설비학회지:조명전기설비
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• 제13권2호
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• pp.234-234
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• 1999

The aim of this paper is to suggest a design method of the optimal model following control system using genetic algorithm (GA). This control system is designed by applying GA with reference model to the optimal determination of weighting matrices Q, R that are given by LQ regulator problem. The method to do this is that all the diagonal elements of weighting matrices are optimized simultaneously by GA, in the search domain selected adequately. And we design the model following control system to boi1er-turbine equipment by the proposed method. The model following control system designed by this method has the better command tracking performance than that of the control system designed by the trial-and-error method. The effectiveness of this control system is verified by computer simulation.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• 대한임상독성학회지
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• 제9권2호
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• pp.71-76
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• 2011

Purpose: The Rumack-Matthew nomogram cannot be applied in managing overdose by extended release (ER) preparation acetaminophen (AAP). This study analyzed the clinical characteristics of ER preparation AAP overdose in order to develop a treatment recommendation. Methods: We retrospectively reviewed the medical records of patients presented to the emergency department as a result of AAP overdose from Jan 2008 to Dec 2010. Only those patients who ingested an ER preparation of AAP were included in the study. Their blood AAP concentrations were measured at 4 and 8 hours after ingestion. Clinical variables related to AAP intoxication were analyzed. Results: Of the total 108 AAP overdose patients identified during the 3-year period, 20 suffered specifically with ER preparation AAP overdose. The mean estimated ingestion amount was 167.5 mg/kg. Treatments including gastric lavage, activated charcoal, and N-acetyl cysteine (NAC) were performed on 10, 14, and 11 patients, respectively. Hepatotoxicity was diagnosed in only one patient who was then successfully treated with NAC. In another case, blood AAP concentration continued to increase until at least 11-hours after ingestion. Conclusion: This study suggested that blood AAP concentrations associated with ingestion of ER formulations of AAP, may increase in an extended manner. Therefore, multiple sampling and longer periods between samples assessing AAP blood concentration may be required for incidences of extended release overdose.

• Toxicological Research
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• 제29권1호
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• pp.7-14
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• 2013

Betaine supplementation has been shown to alleviate altered glucose and lipid metabolism in mice fed a high-fat diet or a high-sucrose diet. We investigated the beneficial effects of betaine in diabetic db/db mice. Alleviation of endoplasmic reticulum (ER) and oxidative stress was also examined in the livers and brains of db/db mice fed a betaine-supplemented diet. Male C57BL/KsJ-db/db mice were fed with or without 1% betaine for 5 wk (referred to as the db/db-betaine group and the db/db group, respectively). Lean non-diabetic db/+ mice were used as the control group. Betaine supplementation significantly alleviated hyperinsulinemia in db/db mice. Betaine reduced hepatic expression of peroxisome proliferator-activated receptor gamma coactivator 1 alpha, a major transcription factor involved in gluconeogenesis. Lower serum triglyceride concentrations were also observed in the db/db-betaine group compared to the db/db group. Betaine supplementation induced hepatic peroxisome proliferator-activated receptor alpha and carnitine palmitoyltransferase 1a mRNA levels, and reduced acetyl-CoA carboxylase activity. Mice fed a betaine-supplemented diet had increased total glutathione concentrations and catalase activity, and reduced lipid peroxidation levels in the liver. Furthermore, betaine also reduced ER stress in liver and brain. c-Jun N-terminal kinase activity and tau hyperphosphorylation levels were lower in db/db mice fed a betaine-supplemented diet, compared to db/db mice. Our findings suggest that betaine improves hyperlipidemia and tau hyperphosphorylation in db/db mice with insulin resistance by alleviating ER and oxidative stress.

• 한국결정학회지
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• 제8권1호
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• pp.38-47
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• 1997

새로운 방식의 결정성장용 직경 자동제어장치를 개발하였다. 이 장치는 금속선의 장력 변화를 주파수로 변환시켜 감지하는 무게센서로서 신호전달 및 전력공급 체계가 무접촉 방식이므로 노이즈가 극소화되며 따라서 안정성, 정밀성이 종래의 센서에 비해 10배 이상 증대된다. 이 장치에서 무게센서 부분은 1) 금속선, 2) 시그날을 형성하는 Sinusoidal Wave Generator, 3) 형성된 시그날의 진폭을 조정하고 안정화 시켜주는 자동 증폭조절회로, 4) 정류장치 및 신호 변환기, 5) 시그날을 관리, 제어하는 PC 보드 등으로 구성하였고, 그 외에 2개의 검증용, 무게보정용, 성장제어용 등 4개의 프로그램을 작성하였다. 이 장치는 표준편차 값이 $\pm0.10g$(1회/sec 측정 때), 분해능이 $5{\times}10^{-5}$이고, 최대 200kg까지 결정을 성장시킬 수 있으며, 또한 압력조건은 진공조건부터 200 atm 이하, 온도조건은 $350^{\circ}C$ 이하에서 일관성, 재현성 있는 작동이 가능했다. 단결정 자동직 경제어에 필요한 정확도를 확보하기 위해 온도범위 $100^{\circ}C$가 $\pm0.025^{\circ}C$로자동 조절되도록 '시그날 Divider'를 제작하였다. 이 무게 센서를 $Y_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;Bi_{12}GeO_{20}$ 등의 단결정 성장에 응용하였으며 매우 양호한 결정을 성공적으로 성장시킬 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.