• Journal of Welding and Joining
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• 제18권6호
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• pp.42-47
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• 2000

The object of this study is to estimate Sn-Ag-Bi-Ga solder alloy as a substitute for Sn-37Pb alloy. For Sn-Ag-Bi-Ga alloys, Ag, Bi and Ga contents are varied. (Ag : 1~5%, Ga : 3%, Bi : 3~6%) Comparing to Sn-37Pb alloy Sn-Ag-Bi-Ga alloys have wider melting temperature range up to max. $18.7^{\circ}C$. With increasing Ag, Bi contents, the wettability of the alloys increased up to max. 6.6 mN. The vickers hardness of the alloys was max. 46.4 Hv. The ultimate tensile stress of the alloys was max. 60.3 MPa and the elongation was max. 1.2%. The joint strength between circuit board and solder was max. 55.5 N and the joint strength between connector and solder was max. 176.1 N. There were no cracks in this alloys after thermal shock test.

• 한국재료학회지
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• 제15권9호
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• pp.598-603
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• 2005

To develope new lead-free solders with the melting temperature close to that of Sn-37Pb$(183^{\circ}C)$, Sn-0.7Cu-5Pb-1Ga, Sn-0.7Cu-5Pb-1Ag, Sn-0.7Cu-5Pb-5Bi-1Ag, and Sn-0.7Cu-SBi-1Ag alloys were composed by adding low-netting elements such as Ga, Bi, Pb, and Ag to Sn-0.7Cu. Then the melting temperatures, microstructures, wettability, and adhesion properties of these alloys were evaluated. DSC analysis showed that the melting temperature of Sn-0.7Cu-SPb-1Ga was $211^{\circ}C$, and those of other alloys was in the range of $192\~200^{\circ}C$. Microstructures of these alloys after heat-treatment at $150^{\circ}C$ for 24 hrs were basically composed of coarsely- grown $\beta-Sn$ grains, and $Cu_6Sn_5$ and $Ag_3Sn$ intermetallic precipitates. Sn-0.7Cu-5Pb-1Ga and Sn-0.7Cu-5Pb-5Bi-1Ag showed excellent wettability, while Sn-0.7Cu-5Bi-1Ag and Sn-0.7Cu-5Pb-5Bi-1Ag revealed good adhesion strength with the Cu substrates. Among 4 alloys, Sn-0.7Cu-5Pb-5Bi-1Ag with the lowest melting temperature $(192^{\circ}C)$ and relatively excellent wettability and adhesion strength was suggested to be the best candidate solder to replace Sn-37Pb.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.